論文- 井上 耕治 -
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件数:108件
[2018]
1.Industrial application of atom probe tomography to semiconductor devices.[Scripta Materialia,148,(2018),82-90]Giddings Alexander Devin, Koelling Sebastian, Shimizu Yasuo, Estivill Robert, Inoue Koji, Vandervorst Wilfried, Yeoh Wai Kong
10.1016/j.scriptamat.2017.09.004
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000427217900018&DestApp=WOS
2.Composition evolution of gamma prime nanoparticles in the Ti-doped CoFeCrNi high entropy alloy.[Scripta Materialia,148,(2018),42-46]Han Bin, Wei Jie, Tong Yang, Chen Da, Zhao Yilu, Wang Jing, He Feng, Yang Tao, Zhao Can, Shimizu Yasuo, Inoue Koji, Nagai Yasuyoshi, Hu Alice, Liu Chain Tsuan, Kai Ji Jung
10.1016/j.scriptamat.2018.01.025
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000427217900010&DestApp=WOS
3.Deuterium trapping at vacancy clusters in electron/neutron-irradiated tungsten studied by positron annihilation spectroscopy.[Journal of Nuclear Materials,499,(2018),464-470]T. Toyama, K. Ami, K. Inoue, Y. Nagai, K. Sato, Q. Xu, Y. Hatano
10.1016/j.jnucmat.2017.11.022
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000425106800051&DestApp=WOS
4.Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1-xO2/SiO2 high-k stacks as evidenced by atom probe tomography.[Y. Tu, B. Han, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, and Y. Nagai,112(3),(2018),032902-]Tu Y., Han B., Shimizu Y., Kunimune Y., Shimada Y., Katayama T., Ide T., Inoue M., Yano F., Inoue K., Nagai Y.
10.1063/1.5010256
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000423027300033&DestApp=WOS
[2017]
5.Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations.[Journal of Microscopy,268(3),(2017),230-238]Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama
10.1111/jmi.12602
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000415900300003&DestApp=WOS
6.1.54 mu m photoluminescence from Er:O-x centers at extremely low concentration in silicon at 300 K.[OPTICS LETTERS,42(17),(2017),3311-3314]Celebrano Michele, Ghirardini Lavinia, Finazzi Marco, Shimizu Yasuo, Tu Yuan, Inoue Koji, Nagai Yasuyoshi, Shinada Takahiro, Chiba Yuki, Abdelghafar Ayman, Yano Maasa, Tanii Takashi, Prati Enrico
10.1364/OL.42.003311
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000408952100017&DestApp=WOS
7.Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures.[Nanotechnology,28(38),(2017),385301-]Tu Y., Han B., Shimizu Y., Inoue K., Fukui Y., Yano M., Tanii T., Shinada T., Nagai Y.
10.1088/1361-6528/aa7f49
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000413181200001&DestApp=WOS
8.Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon.[Applied Physics Letters,110(6),(2017),062105/1-062105/5]Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama
10.1063/1.4975814
9.Influence of laser power on atom probe tomographic analysis of boron distribution in silicon.[Ultramicroscopy,173,(2017),58-63]Y. Tu, H. Takamizawa, B. Han, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, and Y. Nagai
10.1016/j.ultramic.2016.11.023
10.Weak-beam scanning transmission electron microscopy for quantitative dislocation density measurement in steels.[[Microscopy,66(2),(2017),120-130]K. Yoshida, M. Shimodaira, T. Toyama, Y. Shimizu, K. Inoue, T. Yoshiie, K. J. Milan, R. Gerard, and Y. Nagai
10.1093/jmicro/dfw111
11.Roles of Solute C and Grain Boundary in Strain Aging Behaviour of Fine-grained Ultra-low Carbon Steel Sheets.[ISIJ International,57(7),(2017),1273-1281]Ono Yoshihiko, Funakawa Yoshimasa, Okuda Kaneharu, Seto Kazuhiro, Ebisawa Naoki, Inoue Koji, Nagai Yasuyoshi
10.2355/isijinternational.ISIJINT-2016-622
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000406357600019&DestApp=WOS
[2016]
12.Dislocation Substructure in the Cold-Rolled Ni-20 Mass Pct Cr Alloy Analyzed by X-ray Diffraction, Positron Annihilation Lifetime, and Transmission Electron Microscopy.[METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE,47A(12),(2016),6384-6393]Yonemura Mitsuharu, Inoue Koji
10.1007/s11661-016-3717-y
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000387856000075&DestApp=WOS
13.Hole size distributions in cardo-based polymer membranes deduced from the lifetimes of ortho-positronium.[Journal of Physics: Conference Series,674,(2016),012017-]Y Kobayashi, A Kinomura, S Kazama, K Inoue, T Toyama, Y Nagai, K Haraya, H F M Mohamed, B E O'Rourke, N Oshima and R Suzuki
14.陽電子消滅同時計数ドップラー広がりによる元素分析法.[陽電子科学,6,(2016),21-28]井上耕治, 永井康介
15.Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography.[RSC Advances,6(5),(2016),3617-3622]B. Han, Y. Shimizu, G. Seguini, E. Arduca, C. Castro, G. Ben Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon and M. Perego
10.1039/C5RA26710B
16.Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon.[Japanese Journal of Applied Physics,55,(2016),031304/1-031304/5]M. Yamada, K. Sawano, M. Uematsu, Y. Shimizu, K. Inoue, Y. Nagai, and K. M. Itoh
10.7567/JJAP.55.031304
17.Atom Probe Tomography of Nanoscale Electronic Materials.[Materials Research Bulletin,41,(2016),30-]D. J. Larson, T. J. Prosa, D. E. Perea, K. Inoue, D. Mangelinck
18.Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements.[Japanese Journal of Applied Physics,55,(2016),026501/1-026501/5]Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, S. Kudo, A. Nishida, T. Toyama, and Y. Nagai
10.7567/JJAP.55.026501
19.Boron distributions in individual core-shell Ge/Si and Si/Ge heterostructured nanowires.[Nanoscale,8(47),(2016),19811-19815]B. Han, Y. Shimizu, J. Wipakorn, K. Nishibe, Y. Tu, K. Inoue, N. Fukata, and Y. Nagai
10.1039/C6NR04384D
20.Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography.[Applied Physics Express,9(10),(2016),106601/1-106601/4]H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nozawa, T. Toyama, F. Yano, M. Inoue, A. Nishida, and Y. Nagai
10.7567/APEX.9.106601
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