著書論文等- 佐藤 昭 -
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件数:263件
[2019]
1.[] UTC-PD-integrated HEMT for optical-to-millimeter-wave carrier frequency down-conversion.[OFC: Optical Fiber Conference Digest,(2019)]Y. Omori, T. Hosotani, T. Otsuji, K. Iwatsuki, and A. Satou
2.[] 二次元ナノアンテナ導入による格子ゲート構造プラズモニックTHzディテクタの偏光特性制御.[第66回応用物理学会春季学術講演会,(2019)]鈴木雅也, 細谷友崇, 末光哲也, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 尾辻泰一, 佐藤昭
3.[] 横型グラフェントンネルダイオードにおけるゲート電界効果の解析.[第66回応用物理学会春季学術講演会,(2019)]志賀佳菜子, 菅原健太, 佐藤昭, 吹留博一, 尾辻泰一, 内野俊
4.[] 二次元プラズモンを用いたテラヘルツ帯光-無線周波数下方変換の理論解析.[第66回応用物理学会春季学術講演会,(2019)]眞鍋颯也, 尾辻泰一, 佐藤 昭
5.[] Introduction of 2D nanoantennas to grating-gate plasmonic THz detector for controlling Its polarization characteristics, OTST: Optical Terahertz Science and Technology Dig., Tu-P-13 (1 page), Eldrado Hotel&Spa, Santa Fe, NM, USA, March 12, 2019..[OTST: Optical Terahertz Science and Technology Dig.,(2019)]M. Suzuki, T. Hosotani, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, T. Otsuji, and A. Satou
6.[] Millimeter-wave photonic double-mixing by InGaAs-HEMTs for optical to wireless carrier frequency down-conversion, The 23rd International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, Russia, March 11-14, 2019..[The 23rd International Symposium on Nanophysics and Nanoelectronics,(2019)]A. Satou, Y. Omori, S. Manabe, T. Hosotani, K. Iwatsuki, and T. Otsuji
[2018]
7.[] 格子ゲート構造プラズモニックTHzディテクタの偏光特性制御のための二次元ナノアンテナ導入.[信学技報,(2018)]鈴木雅也, 細谷友崇, 末光哲也, 瀧田佑馬, 伊藤弘昌, 南出泰亜, 尾辻泰一, 佐藤昭
8.[] Fabrication of Gate Tunable Graphene Lateral Tunnel Diodes, 2018 MRS Fall Meeting Dig., NM01.07.16, Hynes Convention Center, Boston, MA, USA, Nov. 27, 2018..[2018 MRS Fall Meeting Dig.,(2018)]T. Uchino, K. Shiga, K. Sugawara, H. Fukidome, A. Satou, and T. Otsuji
9.[] Terahertz current-driven plasmonic lasing and amplification, WINDS 18: International Workshop on Innovative Nanoscale Devices and Systems Book of Abstracts, p. 72, Westin Hapuna Beach Resort, Hawaii, USA, Nov. 25-29, 2018..[WINDS 18: International Workshop on Innovative Nanoscale Devices and Systems Book of Abstracts,(2018)]D. Yadav, S. Boubanga-Tombet, G. Tamamushi, T. Watanabe, A. Satou, A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
10.[] Photonic double-mixing by InGas-HEMTs for optical to MMW-THz carrier frequency down-conversion, ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts, L2-03, p. 44, the Park-Hotel “Ershovo” in Zvenigorod, Moscow Region, Russia, 1-5 Oct. 2018..[ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts,(2018)]A. Satou, Y. Omori, S. Manabe, T. Hosotani, T. Suemitsu, and T. Otsuji
11.[] Graphene-based 2D heterostructures for terahertz photonic and plasmonic light-sources applications, ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts, L2-01, p. 42, the Park-Hotel “Ershovo” in Zvenigorod, Moscow Region, Russia, 1-5 Oct. 2018..[ICMNE-2018: International Conference on Nano- and Micro-Electronics Book of Abstracts,(2018)]D. Yadav, T. Watanabe, S. Boubanga-Tombet, A. Satou, V. Ryzhii, M. Ryzhii, A.A. Dubinov, W. Knap, V.V. Popov, T. Otsuji
12.[] Coupling of 2D plasmons in grating-gate plasmonic THz detector to THz wave with lateral polarization.[IRMMW-THz: the 43rd International Conference on Infrared, Millimeter and Terahertz Waves,(2018)]M. Suzuki, T. Hosotani, T. Otsuji, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, and A. Satou
13.[] UTC-PD構造を集積したInP-HEMTによる光-ミリ波帯周波数下方変換.[2018年電子情報通信学会ソサエティ大会,(2018)]大森雄也, 細谷友崇, 末光哲也, 尾辻泰一, 佐藤昭
14.[] ALD-Al2O3を用いた横型グラフェントンネルダイオードの作製.[第79回応用物理学会秋季学術講演会,(2018)]志賀佳菜子, 菅原健太, 佐藤昭, 吹留博一, 尾辻泰一, 内野俊
15.[] Carrier frequency down-conversion from optical to MMW/THz data signal using InGaAs-HEMT, RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Wed-2-2, pp. 70-72, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018..[RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts,(2018)]A. Satou, Y. Ohmori, S. Manabe, T. Hosotani, T. Suemitsu, and T. Otsuji
16.[] 2D diffraction grating for controlling polarization characteristics of grating-gate plasmonic THz detector, RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Fri-2-4, pp. 130-131, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018..[RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts,(2018)]M. Suzuki, T. Hosotani, T. Otsuji, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, and A. Satou
17.[] Emission and amplification of terahertz radiation using Dirac fermions and plasmons in graphene, RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts, Fri-2-3, pp. 128-129, CBF Nowy Swiat, Warsaw, Poland, 17-21 Sept. 2018..[RJUSE: the 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Book of Abstracts,(2018)]T. Otsuji, D. Yadav, S. Boubanta-Tombet, T. Watanabe, A. Satou, A.A. Dubinov, M. Ryzhii, V.V. Popov, W. Knap, V. Mitin, M.S. Shur, and V. Ryzhii
18.[] Auger Recombination in Graphene with Spectral Broadening and Renormalization by Electron-Electron Interaction, PIERS: Progress in Electromagnetics Research Symposium, 4A14-1I, Toyama, japan, 1-4 Aug., 2018..[PIERS: Progress in Electromagnetics Research Symposium,(2018)]A. Satou, V. Ryzhii, V. Vyurkov, G. Alymov, and D. Svintsov
19.[] THz devices based on transistors incorporated with 2D plasmonic metamaterial structures, A3 Metamaterials Forum 2018, I18, POSTECH, Korea, 12-15 Aug. 2018..[A3 Metamaterials Forum 2018,(2018)]A. Satou, M. Suzuki, T. hosotani, Y. Takida, H. Ito, H. Minamide, T. Suemitsu, and T. Otsuji
20.[] “Introduction of 2D Diffraction Grating into Grating-Gate Plasmonic THz Detector for Controlling Its Polarization Characteristics,” AWAD 2018: the 26th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Dig., Kitakyushu, Japan, Jul. 2-4, 2018..[AWAD 2018: the 26th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Dig.,(2018)]M. Suzuki, T. Hosotani, T. Otsuji1, T. Suemitsu, Y. Takida, H. Ito, H. Minamide, and A. Satou
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