論文- 長 康雄 -
表示方法: 表示形式: 表示順:
件数:330件
[2018]
1.High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy.[Microelectronics Reliability,Vol.88-90,(2018),242-245]Y. Yamagishi, and Y. Cho
10.1016/j.microrel.2018.07.058
2.Visualization of traps at SiO2/SiC interfaces near the conduction band by local deep level transient spectroscopy at low temperatures.[Jpn.J.Appl.Phys,,57,(2018),08NB12-1-08NB12-5]Takayuki Abe, Yuji Yamagishi, and Yasuo Cho
10.7567/JJAP.57.08NB12
3.Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,112,(2018),243102-1-243102-5]Kohei Yamasue and Yasuo Cho
10.1063/1.5032277
4.Scanning probe-type data storage beyond hard disk drive and flash memory.[MRS Bulletin,43(5),(2018),365-370]長 康雄, Seungbum Hong
10.1557/mrs.2018.98
5.Nanoscale linear permittivity imaging based on scanning nonlinear dielectric microscopy.[Nanotechnology,29(20),(2018),205709-1-205709-9]Yoshiomi Hiranaga, Norimichi Chinone and Yasuo Cho
6.Improvement of Local Deep Level Transient Spectroscopy for.[Materials Science Forum,924,(2018),289-292]Yuji Yamagishi, and Yasuo Cho
10.4028/www.scientific.net/MSF.924.289
[2017]
7.Nanosecond microscopy of capacitance at SiO2/4H-SiC interfaces by time-resolved scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,111,(2017),163103-1-163103-5]Y. Yamagishi, and Y. Cho
10.1063/1.4999794
8.Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer.[Jpn.J.Appl.Phys,,56,(2017),10PF18-1-10PF18-4]長 康雄
9.High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy.[Japanese Journal of Applied Physics,56,(2017),100101-1-100101-10]Yasuo Cho
10.7567/JJAP.56.100101
10.Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps.[JOURNAL OF APPLIED PHYSICS,122,(2017),105701-1-105701-9]Norimichi Chinone, and Yasuo Cho
10.1063/1.4991739
11.Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy.[Japanese Journal of Applied Physics,56(10S),(2017),10PF16-1-10PF16-7]Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo and Yasuo Cho
10.7567/JJAP.56.10PF16
12.Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy.[Japanese Journal of Applied Physics,56(10S),(2017),10PF18-1-10PF18-4]Hiroyuki Odagawa, Koshiro Terada, Yohei Tanaka, Hiroaki Nishikawa, Takahiko Yanagitani, and Yasuo Cho
13.Quantitative Analysis of Active Dopant Distribution and Estimation of Effective Diffusivity in Phosphorus-Implanted Emitter of Si Solar Cell Using Scanning Nonlinear Dielectric Microscopy.[IEEE PVSC-44,(2017)]Kotaro Hirose, Katsuto Tanahashi, Hidetaka Takato, and Yasuo Cho
14.Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,111,(2017),061602-1-061602-4]Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, and Yasuo Cho
10.1063/1.4990865
15.Quantitative measurement of active dopant density distribution in phosphorus-implanted monocrystalline silicon solar cell using scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,111(3),(2017),032101-1-032101-4]K. Hirose, K. Tanahashi, H. Takato, and Y. Cho
10.1063/1.4994813
16.Universal Parameter Evaluating SiO2/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy.[Materials Science Forum,897,(2017),159-162]Norimichi Chinone, Alpana Nayak, Ryoji Kosugi ,Yasunori Tanaka, Shinsuke Harada, Yuji Kiuchi, Hajime Okumura, and Yasuo Cho
10.4028/www.scientific.net/MSF.897.159
17.Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Ttransient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy.[Materials Science Forum,897,(2017),127-130]Norimichi Chinone, Ryoji Kosugi ,Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, and Yasuo Cho
10.4028/www.scientific.net/MSF.897.127
[2016]
18.Two-dimensional local deep level transient spectroscopy imaging using super-higher-order scanning nonlinear dielectric microscopy.[ISTFA2016,(2016)]N. Chinone, R.Kosugi ,Y. Tanaka, S. Harada, H. Okumura, and Y. Cho,
19.Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy.[Microelectronics Reliability,64,(2016),566-569]N. Chinone, R.Kosugi ,Y. Tanaka, S. Harada, H. Okumura, and Y. Cho
20.Visualization of Gate-Bias-Induced Carrier Redistribution in SiC Power DIMOSFET Using Scanning Nonlinear Dielectric Microscopy.[IEEE TRANSACTIONS ON ELECTRON DEVICES,63(8),(2016),3165-3170]Norimichi Chinone and Yasuo Cho
Page: [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [next]
戻るこのページのトップへ
copyright(c)2005 Tohoku University