論文- 長 康雄 -
表示方法: 表示形式: 表示順:
件数:368件
[2020]
1.A scanning nonlinear dielectric microscopic investigation of potential-induced degradation in monocrystalline silicon solar cells.[Appl. Phys. Lett.,,116,(2020),182107-1-182107-4]Yasuo Cho, Sachiko Jonai, Atsushi Masuda
2.Influence of non-uniform interface defect clustering on field-effect mobility in SiC MOSFETs investigated by local deep level transient spectroscopy and device simulation.[Mater. Sci. Forum,(2020),xxx]Kohei Yamasue, Yuji Yamagishi, Yasuo Cho
[2019]
3.Carrier Profiling of the 10-nm-order structure in a 3D Flash memory cell using scanning nonlinear dielectric microscopy.[Proceedings from the 45th International Symposium for Testing and Failure Analysis,(2019),490-493]Jun Hirota, Ken Hoshino, Tsukasa Nakai, Kohei Yamasue, Yasuo Cho
4.Unintentional doping effects on atomically-thin Nb-doped MoS<SUB>2</SUB> observed by scanning nonlinear dielectric microscopy.[Proceedings from the 45th International Symposium for Testing and Failure Analysis,(2019),498-503]Kohei Yamasue, Yasuo Cho
5.走査型非線形誘電率顕微鏡による半導体キャリア分布観察のための絶縁膜付き探針の開発と層状半導体評価への応用.[第39回ナノテスティングシンポジウム,(2019),135-140]高野 幸喜, 山末 耕平, 長 康雄
6.間欠接触走査型非線形誘電率顕微鏡を用いた半導体キャリア分布観察における信号雑音比の改善.[第39回ナノテスティングシンポジウム,(2019),130-134]山末 耕平, 長 康雄
7.時間分解・局所DLTS 法を用いたマクロステップを有する SiO<SUB>2</SUB>/SiC の界面準位密度分布評価.[第39回ナノテスティングシンポジウム,(2019),75-79]保坂 杏奈, 山末 耕平, Judith Woerle, Corrado Bongiorno, Gabriel Ferro, Ulrike Grossner, Massimo Camarda, 長 康雄
8.Optimization of signal intensity in intermittent contact scanning nonlinear dielectric microscopy.[Microelectronics Reliability,Vol.100-101,(2019),113345 -1-113345 -5]K. Yamasue, Y. Cho
10.1016/j.microrel.2019.06.037
9.Two-dimensional defect mapping of the SiO2/4H-SiC interface.[PHYSICAL REVIEW MATERIALS,3,(2019),084602-1-084602-8]Judith Woerle, Brett C. Johnson, Corrado Bongiorno, Kohei Yamasue, Gabriel Ferro, Dipanwita Dutta, Thomas A. Jung, Hans Sigg, Yasuo Cho, Ulrike Grossner, and Massimo Camarda
10.1103/PhysRevMaterials.3.084602
10.Carrier distribution imaging using ∂C/∂z-mode scanning nonlinear dielectric microscopy.[Rev. Sci. Instrum,Vol.90,(2019),083705.1-083705.12]Yoshiomi Hiranaga, and Yasuo Cho
10.1063/1.5097906
[2018]
11.走査型非線形誘電率顕微鏡による数層MoS<SUB>2</SUB> のキャリア分布観察における信号強度の改善.[第38回ナノテスティングシンポジウム,(2018),196-199]山末 耕平, 長康雄
12.High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy.[Microelectronics Reliability,Vol.88-90,(2018),242-245]Y. Yamagishi, and Y. Cho
10.1016/j.microrel.2018.07.058
13.Visualization of traps at SiO2/SiC interfaces near the conduction band by local deep level transient spectroscopy at low temperatures.[Jpn.J.Appl.Phys,,57,(2018),08NB12-1-08NB12-5]Takayuki Abe, Yuji Yamagishi, and Yasuo Cho
10.7567/JJAP.57.08NB12
14.Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,112,(2018),243102-1-243102-5]Kohei Yamasue and Yasuo Cho
10.1063/1.5032277
15.Scanning probe-type data storage beyond hard disk drive and flash memory.[MRS Bulletin,43(5),(2018),365-370]長 康雄, Seungbum Hong
10.1557/mrs.2018.98
16.Nanoscale linear permittivity imaging based on scanning nonlinear dielectric microscopy.[Nanotechnology,29(20),(2018),205709-1-205709-9]Yoshiomi Hiranaga, Norimichi Chinone and Yasuo Cho
17.Improvement of Local Deep Level Transient Spectroscopy for.[Materials Science Forum,924,(2018),289-292]Yuji Yamagishi, and Yasuo Cho
10.4028/www.scientific.net/MSF.924.289
[2017]
18.Nanosecond microscopy of capacitance at SiO2/4H-SiC interfaces by time-resolved scanning nonlinear dielectric microscopy.[APPLIED PHYSICS LETTERS,111(16),(2017),163103-1-163103-5]Y. Yamagishi, Y. Cho
10.1063/1.4999794
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000413294800035&DestApp=WOS
19.Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer.[Jpn.J.Appl.Phys,,56,(2017),10PF18-1-10PF18-4]長 康雄
20.High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy.[Japanese Journal of Applied Physics,56,(2017),100101-1-100101-10]Yasuo Cho
10.7567/JJAP.56.100101
Page: [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [next]
戻るこのページのトップへ
copyright(c)2005 Tohoku University