著書論文等- 長 康雄 -
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件数:363件
[2019]
1.[] Two-dimensional defect mapping of the SiO2/4H-SiC interface.[PHYSICAL REVIEW MATERIALS,3,(2019),084602-1-084602-8]Judith Woerle, Brett C. Johnson, Corrado Bongiorno, Kohei Yamasue, Gabriel Ferro, Dipanwita Dutta, Thomas A. Jung, Hans Sigg, Yasuo Cho, Ulrike Grossner, and Massimo Camarda
10.1103/PhysRevMaterials.3.084602
[2018]
2.[] High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy.[Microelectronics Reliability,Vol.88-90,(2018),242-245]Y. Yamagishi, and Y. Cho
10.1016/j.microrel.2018.07.058
3.[] Visualization of traps at SiO2/SiC interfaces near the conduction band by local deep level transient spectroscopy at low temperatures.[Jpn.J.Appl.Phys,,57,(2018),08NB12-1-08NB12-5]Takayuki Abe, Yuji Yamagishi, and Yasuo Cho
10.7567/JJAP.57.08NB12
4.[] Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,112,(2018),243102-1-243102-5]Kohei Yamasue and Yasuo Cho
10.1063/1.5032277
5.[] Scanning probe-type data storage beyond hard disk drive and flash memory.[MRS Bulletin,43(5),(2018),365-370]長 康雄, Seungbum Hong
10.1557/mrs.2018.98
6.[] 走査型プローブ顕微鏡(非線形誘電率顕微鏡)を用いたデバイス観察.[公益社団法人日本表面科学会 表面と真空,61(4), (2018), 221-226]長康雄
10.1380/vss61.221
7.[] Nanoscale linear permittivity imaging based on scanning nonlinear dielectric microscopy.[Nanotechnology,29(20),(2018),205709-1-205709-9]Yoshiomi Hiranaga, Norimichi Chinone and Yasuo Cho
8.[] Improvement of Local Deep Level Transient Spectroscopy for.[Materials Science Forum,924,(2018),289-292]Yuji Yamagishi, and Yasuo Cho
10.4028/www.scientific.net/MSF.924.289
[2017]
9.[] Nanosecond microscopy of capacitance at SiO2/4H-SiC interfaces by time-resolved scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,111,(2017),163103-1-163103-5]Y. Yamagishi, and Y. Cho
10.1063/1.4999794
10.[] 走査型非線形誘電率顕微鏡(SNDM)の紹介と電子デバイス・材料評価への応用.[電気学会誌,137(10), (2017), 697-700]山末 耕平, 茅根 慎通,長 康雄
10.1541/ieejjournal.137.697
11.[] Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer.[Jpn.J.Appl.Phys,,56,(2017),10PF18-1-10PF18-4]長 康雄
12.[] High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy.[Japanese Journal of Applied Physics,56,(2017),100101-1-100101-10]Yasuo Cho
10.7567/JJAP.56.100101
13.[] Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps.[JOURNAL OF APPLIED PHYSICS,122,(2017),105701-1-105701-9]Norimichi Chinone, and Yasuo Cho
10.1063/1.4991739
14.[] Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy.[Japanese Journal of Applied Physics,56(10S),(2017),10PF16-1-10PF16-7]Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo and Yasuo Cho
10.7567/JJAP.56.10PF16
15.[] Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy.[Japanese Journal of Applied Physics,56(10S),(2017),10PF18-1-10PF18-4]Hiroyuki Odagawa, Koshiro Terada, Yohei Tanaka, Hiroaki Nishikawa, Takahiko Yanagitani, and Yasuo Cho
16.[] Quantitative Analysis of Active Dopant Distribution and Estimation of Effective Diffusivity in Phosphorus-Implanted Emitter of Si Solar Cell Using Scanning Nonlinear Dielectric Microscopy.[IEEE PVSC-44,(2017)]Kotaro Hirose, Katsuto Tanahashi, Hidetaka Takato, and Yasuo Cho
17.[] Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,111,(2017),061602-1-061602-4]Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, and Yasuo Cho
10.1063/1.4990865
18.[] Quantitative measurement of active dopant density distribution in phosphorus-implanted monocrystalline silicon solar cell using scanning nonlinear dielectric microscopy.[Appl. Phys. Lett.,111(3),(2017),032101-1-032101-4]K. Hirose, K. Tanahashi, H. Takato, and Y. Cho
10.1063/1.4994813
19.[] SNDM強誘電体プローブメモリ.[公益財団法人 日本磁気学会 まぐね,12(3), (2017), 109-114]長 康雄
20.[] Universal Parameter Evaluating SiO2/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy.[Materials Science Forum,897,(2017),159-162]Norimichi Chinone, Alpana Nayak, Ryoji Kosugi ,Yasunori Tanaka, Shinsuke Harada, Yuji Kiuchi, Hajime Okumura, and Yasuo Cho
10.4028/www.scientific.net/MSF.897.159
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