著書論文等- 黒田 理人 -
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件数:340件
[2015]
141.[] Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System.[ECS Transactions,66(4),(2015),305-314]H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii, S. Yamashita, A. Teramoto, S. Sugawa, and T. Ohmi
10.1149/06604.0305ecst
142.[] Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System.[227th Meeting of The Electrochemical Society,(2015),1399-]Hisaya Sugita, Yasukasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii, Satoru Yamashita, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
143.[] ゲート絶縁膜/Si界面の原子オーダー平坦化によるランダムテレグラフノイズ低減効果.[映像情報メディア学会技術報告,39(17(IST2015 24-34)), (2015), 35-38]黒田理人, 小原俊樹, 後藤哲也, 赤川直也, 木本大幾, 寺本章伸, 須川成利
144.[] Measurement and Analysis of Seismic Response in Semiconductor Manufacturing Equipment.[IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,28(3),(2015),289-296]Kaori Komoda, Masashi Sakuma, Masakazu Yata, Yoshio Yamazaki, Fuminobu Imaizumi, Rihito Kuroda and Shigetoshi Sugawa
10.1109/TSM.2015.2427807
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000359231400016&DestApp=WOS
145.[] UV/VIS/NIR imaging technologies: challenges and opportunities.[2015 SPIE Sensing Technology + Applications,9481,(2015),948108-1-948108-8]Rihito Kuroda, Shigetoshi Sugawa
10.1117/12.2180060
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000357087300005&DestApp=WOS
146.[] 浮遊容量負荷読み出しを用いたCMOSイメージセンサの読み出しゲインと線形範囲向上効果.[映像情報メディア学会技術報告,39(16(IST2015 10-23)), (2015), 41-44]若嶋駿一, 楠原史章, 黒田理人, 須川成利
147.[] Analysis of Pixel Gain and Linearity of CMOS Image Sensor using Floating Capacitor Load Readout Operation.[SPIE-IS&T Electronic Imaging 2015,9403,(2015),94030E-1-94030E-10]Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Suagawa
10.1117/12.2083111
148.[] Atomically Flattening of Si Surface of Silicon on Insulator and Isolation-Patterned Wafers.[Japanese Journal of Applied Physics,54(4S),(2015),04DA04-1-04DA04-7]Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiro Shibusawa
10.7567/JJAP.54.04DA04
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000357694000005&DestApp=WOS
149.[] Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface.[Japanese Journal of Applied Physics,54(4S),(2015),04DB01-1-04DB01-5]Yusuke Takeuchi, Rihito Kuroda, Shigetoshi Sugawa
10.7567/JJAP.54.04DB01
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000357694000011&DestApp=WOS
[2014]
150.[] Wide spectral response and highly robust Si image sensor technology.[2nd Asian Image Sensor and Imaging System Symposium,(2014),7-8]Rihito Kuroda and Shigetoshi Sugawa
151.[] MOSFETにおけるランダムテレグラフノイズを引き起こすトラップ密度の解析に関する研究.[電子情報通信学会技術研究報告,114(255(SDM2014 84-95)), (2014), 55-59]小原俊樹, 寺本章伸, 黒田理人, 米澤彰浩, 後藤哲也, 諏訪智之, 須川成利, 大見忠弘
152.[] Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,114(255), (2014), 7-12]後藤 哲也, 黒田 理人, 赤川 直矢, 諏訪 智之, 寺本 章伸, 李 翔, 小原 俊樹, 木本 大幾, 須川 成利, 大見 忠弘, 熊谷 勇喜, 鎌田 浩, 渋沢 勝彦
153.[] MOSFETにおけるランダムテレグラフノイズを引き起こすトラップ密度の解析に関する研究 (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,114(255), (2014), 55-59]小原 俊樹, 寺本 章伸, 黒田 理人, 米澤 彰浩, 後藤 哲也, 諏訪 智之, 須川 成利, 大見 忠弘
154.[] Analysis of the breakdown voltage of an area surrounded by the multi-trench gaps.[Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials,(2014),732-733]Yusuke Takeuchi, Rihito Kuroda Shigetoshi Sugawa
155.[] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers.[Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials,(2014),670-671]T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and T. Shibusawa
156.[] A Novel Analysis of Oxide Breakdown based on Dynamic Observation using Ultra-High Speed Video Capturing Up to 10,000,000 Frames Per Second.[IEEE International Reliability Physics Symposium,(2014),3F.3.1-3F.3.4]Rihito Kuroda, Fan Shao, Daiki Kimoto, Kiichi Furukawa, Hidetake Sugo, Tohru Takeda, Ken Miyauchi, Yasuhisa Tochigi, Akinobu Teramoto and Shigetoshi Sugawa
10.1109/IRPS.2014.6860637
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000343833200055&DestApp=WOS
157.[] Analyzing Correlation between Multiple Traps in RTN Characteristics.[IEEE International Reliability Physics Symposium,(2014),4A.6.1-4A.6.7]Toshiki Obara, Akinobu Teramoto, Akihiro Yonezawa, Rihito Kuroda, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1109/IRPS.2014.6860644
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000343833200062&DestApp=WOS
158.[] Demonstrating Individual Leakage Path from Random Telegraph Signal of Stress Induced Leakage Current.[IEEE International Reliability Physics Symposium,(2014),GD.1.1-GD.1.5]A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa, T. Ohmi
10.1109/IRPS.2014.6861144
159.[] 極限性能を追求する高速,高感度CMOSイメージセンサ技術.[電子情報通信学会技術研究報告,114(120(ICD2014 19-30)), (2014), 37-44]黒田理人, 須川成利
160.[] High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET.[ECS Transactions,61(3),(2014),29-37]Y. Nakao, T. Matsuo, A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, and T. Ohmi
10.1149/06103.0029ecst
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