著書論文等- 黒田 理人 -
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件数:340件
[2016]
121.[] 情報センシングの研究開発動向.[映像情報メディア学会誌,70(7), (2016), 609-622]須川 成利, 山下 誉行, 綱井 史郎, 廣瀬 裕, 赤井 大輔, 山本 洋夫, 大竹 浩, 池辺 将之, 佐藤 俊明, 小林 昌弘, 黒田 理人, 浜本 隆之, 小室 孝, 德田 崇
[2015]
122.[] 高い選択比をもつSiN<sub>x</sub>エッチングガスを用いたFinFET構造の作製.[電子情報通信学会技術研究報告,115(362(EID2015 9-24)), (2015), 1‐4-]小尻尚志, 小尻尚志, 諏訪智之, 橋本圭市, 寺本章伸, 黒田理人, 須川成利, 須川成利
123.[] An Ultraviolet Radiation Sensor Using Differential Spectral Response of Silicon Photodiodes.[IEEE Sensors,(2015),1847-1850]Yhang Ricardo Sipauba Carvalho da Silva, Yasumasa Koda, Satoshi Nasuno, Rihito Kuroda, Shigetoshi Sugawa
10.1109/ICSENS.2015.7370656
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000380440800482&DestApp=WOS
124.[] Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation.[ECS Journal of Solid State Science and Technology,5(2),(2015),P67-P72]Tetsuya Gotoa, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Yutaka Kamata, Yuki Kumagai and Katsuhiko Shibusawa
10.1149/2.0221602jss
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000365748800004&DestApp=WOS
125.[] トンネル電流・拡散電流併用MOSFETのデバイスシミュレーション検討.[電子情報通信学会技術研究報告,115(280(SDM2015 71-83)), (2015), 35-40]古川貴一, 寺本章伸, 黒田理人, 諏訪智之, 橋本圭市, 小尻尚志, 須川成利, 須川成利
126.[] 高精度ガス制御器を用いたAl<sub>2</sub>O<sub>3</sub>のALD成膜におけるプロセス温度の検討.[電子情報通信学会技術研究報告,115(280(SDM2015 71-83)), (2015), 63-68]杉田久哉, 幸田安真, 諏訪智之, 黒田理人, 後藤哲也, 石井秀和, 山下哲, 寺本章伸, 須川成利, 須川成利, 大見忠弘
127.[] Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,115(280), (2015), 17-22]後藤 哲也, 黒田 理人, 諏訪 智之
128.[] トンネル電流・拡散電流併用MOSFETのデバイスシミュレーション検討 (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,115(280), (2015), 35-40]古川 貴一, 寺本 章伸, 黒田 理人
129.[] Proposal of Tunneling and Diffusion Current Hybrid MOSFET.[Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials,(2015),86-87]Kiichi Furukawa, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, and Shigetoshi Sugawa
130.[] Analysis and reduction of leakage current of 2kV monolithic isolator with wide trench spiral isolation structure.[Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials,(2015),804-805]Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
131.[] フローティングディフュージョン容量成分の解析・低減技術と高感度・高飽和CMOSイメージセンサへの適用.[映像情報メディア学会技術報告,39(35(IST2015 43-56)), (2015), 53‐56-56]楠原史章, 若嶋駿一, 那須野悟史, 黒田理人, 須川成利
132.[] 電荷電圧変換ゲイン240μV/e<sup>-</sup>,飽和電子数200ke<sup>-</sup>,感度波長帯域190‐1000nmを有するCMOSイメージセンサ.[映像情報メディア学会技術報告,39(35(IST2015 43-56)), (2015), 49‐52-]那須野悟史, 若嶋駿一, 楠原史章, 黒田理人, 須川成利
133.[] 極限制御プロセスを用いた高性能・高機能イメージセンサ技術.[電子情報通信学会エレクトロニクスソサイエティNEWS LETTER,(161), (2015), 24]黒田理人
134.[] A 80% QE High Readout Speed 1024 Pixel Linear Photodiode Array for UV-VIS-NIR Spectroscopy.[Proceedings of 2015 International Image Sensor Workshop,(2015),78-81]Rihito Kuroda, Takahiro Akutsu, Yasumasa Koda, Kenji Takubo, Hideki Tominaga, Ryuuta Hirose, Tomohiro Karasawa and Shigetoshi Sugawa
135.[] Analysis and Reduction of Floating Diffusion Capacitance Components of CMOS Image Sensor for Photon-Countable Sensitivity.[Proceedings of 2015 International Image Sensor Workshop,(2015),120-123]Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda and Shigetoshi Sugawa
136.[] A 20Mfps Global Shutter CMOS Image Sensor with Improved Sensitivity and Power Consumption.[Proceedings of 2015 International Image Sensor Workshop,(2015),166-169]Shigetoshi Sugawa, Rihito Kuroda, Tohru Takeda, Fan Shao, Ken Miyauchi and Yasuhisa Tochigi
137.[] A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response.[Proceedings of 2015 International Image Sensor Workshop,(2015),312-315]Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa
138.[] A Linear Response Single Exposure CMOS Image Sensor with 0.5e- Readout Noise and 76ke- Full Well Capacity.[2015 Symposium on VLSI Circuits, Technical Digests,2015-August,(2015),C88-C89]Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda and Shigetoshi Sugawa
10.1109/VLSIC.2015.7231334
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000370961400028&DestApp=WOS
139.[] Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern.[ECS Transactions,66(5),(2015),285-292]T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, and K. Shibusawa
10.1149/06605.0285ecst
140.[] Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern.[227th Meeting of The Electrochemical Society,(2015),1354-]Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Naoya Akagawa, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai and Katsuhiko Shibusawa
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