著書論文等- 黒田 理人 -
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件数:350件
[2017]
81.[] Statistical Analysis of Random Telegraph Noise in Source Follower Transistors with Various Shapes.[2017 International Image Sensor Workshop,(2017),39-42]Shinya Ichino, Takezo Mawaki, Shunichi Wakashima, Akinobu Teramoto, Rihito Kuroda, Phillipe Gaubert, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa
82.[] A Spectral Imaging System with an Over 70dB SNR CMOS Image Sensor and Electrically Tunable 10nm FWHM Multi-Bandpass Filter.[2017 International Image Sensor Workshop,(2017),47-50]Yasuyuki Fujihara, Yusuke Aoyagi, Satoshi Nasuno, Shunichi Wakashima, Rihito Kuroda, Kohei Terashima, Takahiro Ishinabe, Hideo Fujikake, Kazuhiro Wako and Shigetoshi Sugawa
83.[] Impact of Random Telegraph Noise with Various Time Constants and Number of States in CMOS Image Sensors.[2017 International Image Sensor Workshop,(2017),43-46]Rihito Kuroda, Akinobu Teramoto and Shigetoshi Sugawa
84.[] 10Mfps 960 Frames Video Capturing Using a UHS Global Shutter CMOS Image Sensor with High Density Analog Memories.[2017 International Image Sensor Workshop,(2017),308-311]Manabu Suzuki, Masashi Suzuki, Rihito Kuroda, Yuki Kumagai, Akira Chiba, Noriyuki Miura, Naoya Kuriyama and Shigetoshi Sugawa
85.[] 高密度アナログメモリを搭載した超高速グローバルシャッタCMOSイメージセンサ.[映像情報メディア学会技術報告,41(10(IST2017 8-19)), (2017), 7‐10-10]鈴木学, 鈴木将, 黒田理人, 熊谷勇喜, 千葉亮, 三浦規之, 栗山尚也, 須川成利
86.[] Impact of SiO2/Si Interface Micro-roughness on SILC Distribution and Dielectric Breakdown: A Comparative Study with Atomically Flattened Devices.[2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS),(2017),DG7.1-DG7.5]Hyeonwoo Park, Tetsuya Goto, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Daiki Kimoto, Shigetoshi Sugawa
10.1109/IRPS.2017.7936364
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87.[] A high sensitivity 20Mfps CMOS image sensor with readout speed of 1Tpixel/sec for visualization of ultra-high speed phenomena.[Proceedings of SPIE - The International Society for Optical Engineering,10328,(2017),1032802-1-1032802-6]R. Kuroda, S. Sugawa
10.1117/12.2270787
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88.[] Atomically flat interface for noise reduction in SOI-MOSFETs.[2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF),(2017),7985986-1-7985986-4]Philippe Gaubert, Alexandre Kircher, Hyeonwoo Park, Rihito Kuroda, Shigetoshi Sugawa, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto
10.1109/ICNF.2017.7985986
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89.[] High sensitivity and high readout speed electron beam detector using steep pn junction Si diode for low acceleration voltage.[IS and T International Symposium on Electronic Imaging Science and Technology,11,(2017),14-17]Yasumasa Koda, Rihito Kuroda, Masaya Hara, Hiroyuki Tsunoda, Shigetoshi Sugawa
10.2352/ISSN.2470-1173.2017.11.IMSE-178
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90.[] Narrow-bandpass liquid crystal filter for real-time multi spectral imaging systems.[Proceedings of the International Display Workshops,1,(2017),259-261]Kohei Terashima, Takahiro Ishinabe, Kazuhiro Wako, Yasuyuki Fujihara, Yusuke Aoyagi, Maasa Murata, Satoshi Nasuno, Shunichi Wakashima, Rihito Kuroda, Yosei Shibata, Shigetoshi Sugawa, Hideo Fujikake
http://www.scopus.com/inward/record.url?eid=85055975403&partnerID=40
91.[] Spectral Absorption Imaging with an Over 70dB SNR CMOS Image Sensor.[電気関係学会東北支部連合大会講演論文集,2017(0), (2017), 16]村田 真麻, 藤原 康行, 青柳 雄介, 黒田 理人, 須川 成利
92.[] 撮像速度1000万コマ/秒を超える高速度CMOSイメージセンサ技術の進展.[高速度イメージングとフォトニクスに関する総合シンポジウム講演論文集(CD-ROM),2017, (2017), ROMBUNNO.3‐2-]黒田理人, 鈴木学, 鈴木将, 須川成利
[2016]
93.[] An Over 1Mfps Global Shutter CMOS Image Sensor with 480 Frame Storage Using Vertical Analog Memory Integration.[2016 IEEE International Electron Devices Meeting Technical Digest,(2016),212-215]Manabu Suzuki, Masashi Suzuki, Rihito Kuroda, Yuki Kumagai, Akira Chiba, Noriyuki Miura, Naoya Kuriyama, Shigetoshi Sugawa
10.1109/IEDM.2016.7838376
94.[] A High Sensitivity 20Mfps CMOS Image Sensor with Readout speed of 1Tpixel/sec for Visualization of Ultra-high Speed Phenomena.[Proceedings of the 31st International Congress on High-speed Imaging and Photonics,(2016),68-73]Rihito Kuroda, Shigetoshi Sugawa
95.[] A Dead-time free global shutter stacked CMOS image sensor with in-pixel LOFIC and ADC using pixel-wise connections.[Proceedings of the 3rd International Workshop on Image Sensors and Imaging Systems,(2016),13-14]Rihito Kuroda, Hidetake Sugo, Shunichi Wakashima, Shigetoshi Sugawa
96.[] 190-1100 nm waveband multispectral imaging system using high UV-light resistance 94dB dynamic range CMOS image sensor.[3rd International Workshop on Image Sensors and Imaging Systems,(2016),37-38]Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Yusuke Aoyagi, Rihito Kuroda, Shigetoshi Sugawa
97.[] 190-1100 nm Waveband Multispectral Imaging System using High Light Resistance Wide Dynamic Range CMOS Image Sensor.[Proceedings of IEEE Sensors 2016,(2016),283-285]Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Yusuke Aoyagi, Rihito Kuroda, Shigetoshi Sugawa
10.1109/ICSENS.2016.7808492
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98.[] 高濃度ドーピングされた(100)方位SOIウェーハに対するSi選択エピタキシャル成長後の平坦な表面形成技術.[電子情報通信学会技術研究報告,116(270(SDM2016 69-78)), (2016), 9‐14-]古川貴一, 寺本章伸, 黒田理人, 諏訪智之, 橋本圭市, 須川成利, 鈴木大介, 千葉洋一郎, 石井勝利, 清水亮, 長谷部一秀
99.[] 原子層堆積法で成膜したAl<sub>2</sub>O<sub>3</sub>膜界面に及ぼす酸化種の影響.[電子情報通信学会技術研究報告,116(270(SDM2016 69-78)), (2016), 27‐30-]齋藤雅也, 諏訪智之, 寺本章伸, 黒田理人, 幸田安真, 杉田久哉, 林真里恵, 土本淳一, 石井秀和, 志波良信, 白井泰雪, 須川成利
100.[] 動作電圧変化時の過渡状態におけるランダムテレグラフノイズの挙動に関する研究.[電子情報通信学会技術研究報告,116(270(SDM2016 69-78)), (2016), 35‐38-]間脇武蔵, 寺本章伸, 黒田理人, 市野真也, 後藤哲也, 諏訪智之, 須川成利, 須川成利
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