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件数:340件
[2019]
21.[] A Review of the 2018 IEEE International Electron Devices Meeting (IEDM).[IEEE Electron Device Society Newsletter,26(1), (2019), 7-10]Kirsten Moselund and Rihito Kuroda
[2018]
22.[] Statistical analysis of threshold voltage variation using MOSFETs with asymmetric source and drain.[IEEE Electron Device Letters,39,(2018),1836-1839]Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa
10.1109/LED.2018.2874012
http://www.scopus.com/inward/record.url?eid=85054523369&partnerID=40
23.[] Meeting matters.[NATURE ELECTRONICS,1(12),(2018),608-609]Thomas Stuart, Moselund Kirsten, Kuroda Rihito
10.1038/s41928-018-0177-y
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000455967800002&DestApp=WOS
24.[] High speed and narrow-bandpass liquid crystal filter for real-time multi spectral imaging systems.[IEICE Transactions on Electronics,E101C,(2018),897-900]Kohei Terashima, Kazuhiro Wako, Yasuyuki Fujihara, Yusuke Aoyagi, Maasa Murata, Yosei Shibata, Shigetoshi Sugawa, Takahiro Ishinabe, Rihito Kuroda, Hideo Fujikake
10.1587/transele.E101.C.897
http://www.scopus.com/inward/record.url?eid=85055977208&partnerID=40
25.[] RTS noise characterization and suppression for advanced CMOS image sensors.[Proceedings of the invited talks, 4th International Workshop on Image Sensors and Imaging Systems,(2018),12-13]Rihito Kuroda, Shinya Ichino, Takezo Mawaki, Tomoyuki Suwa, Akinobu Teramoto, and Shigetoshi Sugawa
26.[] Over 100Mfps high speed global shutter CMOS image sensor.[32nd International Congress on High-Speed Imaging and Photonics,(2018),27]Rihito Kuroda, Manabu Suzuki and Shigetoshi Sugawa
27.[] Effects of Process Gases and Gate TiN Electrode during the Post Deposition Anneal to ALD-Al2O3 Dielectric Film.[American Vacuum Society 65th International Symposium & Exhibition,(2018),161]Masaya Saito, Akinobu Teramoto, Tomoyuki Suwa, Kenshi Nagumo, Yoshinobu Shiba, Rihito Kuroda and Shigetoshi Sugawa
28.[] ソースとドレインが非対称のMOSFETを用いた電気的特性ばらつきの統計的解析.[電子情報通信学会技術研究報告,118(241(SDM2018 52-63)), (2018), 51‐56-]市野真也, 寺本章伸, 黒田理人, 間脇武蔵, 諏訪智之, 須川成利, 須川成利
29.[] ソースとドレインが非対称のMOSFETを用いた電気的特性ばらつきの統計的解析 (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,118(241), (2018), 51-56]市野 真也, 寺本 章伸, 黒田 理人, 間脇 武蔵, 諏訪 智之, 須川 成利
30.[] High Sensitivity Compact Gas Concentration Sensor with Heating Function for High Precision Trimethyl Aluminum Gas Supply System.[2018 International Conference on Solid State Devices and Materials,(2018),587-588]Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, and Shigetoshi Sugawa
31.[] A 125Mfps Global Shutter CMOS Image Sensor with Burst Correlated Double Sampling during Photo-Electrons Collection.[2018 International Conference on Solid State Devices and Materials,(2018),593-594]Manabu Suzuki, Rihito Kuroda, and Shigetoshi Sugawa
32.[] Dual Pixel Reset Voltage CMOS Image Sensor For High SNR Ultraviolet Light Absorption Spectral Imaging.[2018 International Conference on Solid State Devices and Materials,(2018),595-596]Yusuke Aoyagi, Yasuyuki Fujihara, Maasa Murata, Hiroya Shike, Rihito Kuroda, and Shigetoshi Sugawa
33.[] Improved Conductance Method for Interface Trap Density of ZrO2-Si interface.[2018 International Conference on Solid State Devices and Materials,(2018),865-866]Hsin Jyun Lin, Akinobu Teramoto, Hiroshi Watanabe, Rihito Kurota, Kota Umezawa, Kiichi Furukawa, and Shigetoshi Sugawa
34.[] Impacts of Boron Concentration and Annealing Temperature on Electrical Characteristics of CoFeB/MgO/CoFeB Magnetic Tunnel Junction.[2018 International Conference on Solid State Devices and Materials,(2018),905-906]Hyeonwoo Park, Akinobu Teramoto, Jun-ichi Tsuchimoto, Marie Hayashi, Keiichi Hashimoto, Rihito Kuroda, and Shigetoshi Sugawa
35.[] バーストCDS動作を用いた撮影速度1億2500万コマ/秒の高速CMOSイメージセンサ.[映像情報メディア学会技術報告,42(30(IST2018 47-52)), (2018), 5‐8-8]鈴木学, 黒田理人, 須川成利
36.[] Statistical Analyses of Random Telegraph Noise in Pixel Source Follower with Various Gate Shapes in CMOS Image Sensor.[ITE Transactions on Media Technology and Applications,6(3),(2018),163-170]Ichino S, Mawaki T, Teramoto A, Kuroda R, Wakashima S, Suwa T, Sugawa S.
10.3169/mta.6.163
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000438961700002&DestApp=WOS
37.[] Impacts of Random Telegraph Noise with Various Time Constants and Number of States in Temporal Noise of CMOS Image Sensors.[ITE Transactions on Media Technology and Applications,6(3),(2018),171-179]Rihito Kuroda, Akinobu Teramoto and Shigetoshi Sugawa
10.3169/mta.6.171
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000438961700003&DestApp=WOS
38.[] A Multi Spectral Imaging System with a 71dB SNR 190-1100 nm CMOS Image Sensor and an Electrically Tunable Multi Bandpass Filter.[ITE Transactions on Media Technology and Applications,6(3),(2018),187-194]Yasuyuki Fujihara, Yusuke Aoyagi, Maasa Murata, Satoshi Nasuno, Shunichi Wakashima, Rihito Kuroda, Kohei Terashima, Takahiro Ishinabe, Hideo Fujikake, Kazuhiro Wako and Shigetoshi Sugawa
10.3169/mta.6.187
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000438961700005&DestApp=WOS
39.[] 映像情報メディア年報2018シリーズ(第10回)情報センシングの研究開発動向.[映像情報メディア学会誌,72(4), (2018), 537(63)-550(76)]浜本隆之,大高俊徳,池辺将之,樽木久征,小林昌弘,黒田理人,小室孝,徳田崇,船津良平,近藤亨,廣瀬裕,藤澤大介,山本洋夫
40.[] 映像情報メディア年報2018シリーズ(第10回)情報センシングの研究開発動向.[映像情報メディア学会誌,72(4), (2018), 537‐550-550]浜本隆之, 大高俊徳, 池辺将之, 樽木久征, 小林昌弘, 黒田理人, 小室孝, 徳田崇, 船津良平, 近藤亨, 廣瀬裕, 藤澤大介, 山本洋夫
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