著書論文等- 黒田 理人 -
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件数:340件
[2007]
321.[] NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction.[Electrochemical Society Transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics-9,6(3),(2007),229-243]Akinobu Teramoto, Rihito Kuroda, and Tadahiro Ohmi
10.1149/1.2728799
322.[] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage.[211th Electrochemical Society Meeting,(2007),No719-]Rihito Kuroda, Akinobu Teramoto, Weitao Cheng, Shigetoshi Sugawa and Tadahiro Ohmi
323.[] NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction.[211th Meeting of The Electrochemical Society,(2007),No664-]Akinobu Teramoto, Rihito Kuroda, and Tadahiro Ohmi
324.[] Examination of degradation mechanism due, to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction.[MICROELECTRONICS RELIABILITY,47(2-3),(2007),409-418]Watanabe, Kazufumi Teramoto, Akinobu Kuroda, Rihito Sugawa, Shigetoshi Uni, Tadahiro
10.1016/j.microrel.2006.06.001
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000244598900037&DestApp=WOS
[2006]
325.[] Accurate circuit performance prediction model and lifetime prediction method of NBT stressed devices for highly reliable ULSI circuits.[2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06,(2006)]Kuroda R, Watanabe K, Teramoto A, Mifuji M, Yamaha T, Sugawa S, Ohmi T.
http://www.scopus.com/inward/record.url?eid=42749107920&partnerID=40
326.[] Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over 50 Ghz Clock Rate.[in proceedings of the 6th Taiwan-Japan Microelectronics International Symposium,(2006)]Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda, and Naoto Miyamot
327.[] Accurate Circuit Performance Prediction Model and Lifetime Prediction Method for NBT Stressed Devices for Highly Reliable ULSI Circuits.[in proceedings of IEEE International Conference on IC Design & Technology,(2006),199-201]Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa and Tadahiro Ohmi
328.[] Capacitance-voltage measurement method for ultrathin gate dielectrics using LC resonance circuit.[IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,19(1),(2006),43-49]Teramoto, A Kuroda, R Komura, M Watanabe, K Sugawa, S Ohmi, T
10.1109/TSM.2005.863230
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=000235558700007&DestApp=WOS
[2005]
329.[] Accurate Circuit Performance Prediction Model and Lifetime Prediction Method for NBT Stressed Devices for Highly Reliable ULSI Circuits.[IEEE International Electron Device Meeting Technical Digest,(2005),717-720]Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa and Tadahiro Ohmi
330.[] Accurate circuit performance prediction model and lifetime prediction method of NBT stressed devices for highly reliable ULSI circuits.[Technical Digest - International Electron Devices Meeting, IEDM,2005,(2005),700-703]Kuroda R, Watanabe K, Teramoto A, Mifuji M, Yamaha T, Sugawa S, Ohmi T.
http://www.scopus.com/inward/record.url?eid=33847727438&partnerID=40
331.[] New NBTI lifetime prediction method for ultra thin siO<inf>2</inf> films.[ECS Transactions,1(1),(2005),147-160]Watanabe K, Kuroda R, Teramoto A, Sugawa S, Ohmi T.
http://www.scopus.com/inward/record.url?eid=32844463291&partnerID=40
332.[] EOT measurement for ultra-thin gate dielectrics using LC resonance circuit.[IEEE International Conference on Microelectronic Test Structures,(2005),223-227]Teramoto A, Komura M, Kuroda R, Watanabe K, Sugawa S, Ohmi T.
http://www.scopus.com/inward/record.url?eid=27644562998&partnerID=40
333.[] Hole 注入法によるNBTI評価手法及び寿命予測方法の開発.[電子情報通信学会技術研究報告. ED, 電子デバイス,105(435), (2005), 13-18]寺本 章伸, 渡辺 一史, 黒田 理人, 三富士 道彦, 山葉 隆久, 須川 成利, 大見 忠弘
334.[] Hole注入法によるNBTI評価手法及び寿命予測方法の開発.[電子情報通信学会技術研究報告,105(436(SDM2005 192-200)), (2005), 13-18]寺本章伸, 渡辺一史, 黒田理人, 三富士道彦, 山葉隆久, 須川成利, 大見忠弘
335.[] New NBTI Lifetime Prediction Method for Ultra Thin SiO2 Films.[208th Electrochemical Society Meeting,738,(2005)]K. Watanabe, R. Kuroda, A. Teramoto, S. Sugawa and T. Ohmi
336.[] NEW LIFETIME PREDICTION METHOD FOR PMOSFETS WITH ULTRA THIN GATE FILMS.[in proceedings of the 3rd Student-organizing International Mini-Conference on Information Electronics,(2005),127-130]Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
337.[] NEW NBTI LIFETIME PREDICTION METHOD FOR ULTRA THIN SIO2 FILMS-5.[Electrochemical Society Transactions on Physics and Chemistry of SiO2 and the Si-SiO2 Interface,1(1),(2005),147-160]K. Watanabe, R. Kuroda, A. Teramoto, S. Sugawa and T. Ohmi
338.[] LC共振法による極薄ゲート絶縁膜の電気的膜厚測定法.[電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス,105(318), (2005), 21-26]黒田 理人, 寺本 章伸, 小村 政則, 渡辺 一史, 須川 成利, 大見 忠弘
339.[] LC共振法による極薄ゲート絶縁膜の電気的膜厚測定法.[電子情報通信学会技術研究報告,105(318(SDM2005 180-191)), (2005), 21-26]黒田理人, 寺本章伸, 小村政則, 渡辺一史, 須川成利, 大見忠弘
340.[] EOT Measurement for Ultra-Thin gate dielectrics using LC Resonance Circuit.[in proceeding of the IEEE International Conference on Microelectronic Test Structures,(2005),223-227]A. Teramoto, M. Komura, R. Kuroda, K. Watanabe, S. Sugawa, and T. Ohmi
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