著書論文等- 黒田 理人 -
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件数:350件
[2007]
321.[] Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic-and Accumulation- Mode MOSFETs.[Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS,(2007),412-413]Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
322.[] シリコン表面の原子オーダー平坦化技術.[電子情報通信学会技術研究報告,107(245(SDM2007 170-193)), (2007), 57-59]諏訪智之, 黒田理人, 寺本章伸, 大見忠弘
323.[] 大規模アレイTEGを用いたランダム・テレグラフ・シグナルの統計的評価.[電子情報通信学会技術研究報告,107(245(SDM2007 170-193)), (2007), 65-68]阿部健一, 須川成利, 黒田理人, 渡部俊一, 寺本章伸, 大見忠弘
324.[] Circuit level prediction of device performance degradation due to negative bias temperature stress.[MICROELECTRONICS RELIABILITY,47(6),(2007),930-936]Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi
10.1016/j.microrel.2006.06.013
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000247185800012&DestApp=WOS http://www.scopus.com/inward/record.url?eid=34247866452&partnerID=40
325.[] Analysis of Source Follower Random Telegraph Signal Using nMOS and pMOS Array TEG.[in proceedings of the 2007 International Image Sensor Workshop,(2007),62-65]Kenichi Abe, Shigetoshi Sugawa, Rihito Kuroda, Shunichi Watabe, Naoto, Miyamoto, Akinobu Teramoto, Tadahiro Ohmi, Yutaka Kamata and Katsuhiko Shibusawa
326.[] High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs.[in proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors,(2007),2105-2108]W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama and T. Ohmi
327.[] Revolutional progress of silicon technologies exhibiting very high speed performance over a 50-GHz clock rate.[IEEE TRANSACTIONS ON ELECTRON DEVICES,54(6),(2007),1471-1477]Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda, Naoto Miyamoto
10.1109/TED.2007.896391
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328.[] Accuracy and applicability of low-frequency C-V measurement methods for characterization of ultrathin gate dielectrics with large current.[IEEE TRANSACTIONS ON ELECTRON DEVICES,54(5),(2007),1115-1124]Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Hiroshi Tatekawa, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/TED.2007.893207
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329.[] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantages.[Electrochemical Society Transactions on Silicon-on-Insulator Technology and Devices-13,6(4),(2007),113-118]R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, and T. Ohmi
10.1149/1.2728849
330.[] NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction.[Electrochemical Society Transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics-9,6(3),(2007),229-243]Akinobu Teramoto, Rihito Kuroda, and Tadahiro Ohmi
10.1149/1.2728799
331.[] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage.[211th Electrochemical Society Meeting,(2007),No719-]Rihito Kuroda, Akinobu Teramoto, Weitao Cheng, Shigetoshi Sugawa and Tadahiro Ohmi
332.[] NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction.[211th Meeting of The Electrochemical Society,(2007),No664-]Akinobu Teramoto, Rihito Kuroda, and Tadahiro Ohmi
333.[] Examination of degradation mechanism due, to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction.[MICROELECTRONICS RELIABILITY,47(2-3),(2007),409-418]Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Uni
10.1016/j.microrel.2006.06.001
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334.[] Modeling and implementation of subthreshold characteristics of accumulation-mode MOSFETs for various SOI layer thickness and impurity concentrations.[Proceedings - IEEE International SOI Conference,(2007),55-56]R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
10.1109/SOI.2007.4357849
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[2006]
335.[] Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over 50 Ghz Clock Rate.[in proceedings of the 6th Taiwan-Japan Microelectronics International Symposium,(2006)]Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda, and Naoto Miyamot
336.[] Capacitance-voltage measurement method for ultrathin gate dielectrics using LC resonance circuit.[IEEE Transactions on Semiconductor Manufacturing,19(1),(2006),43-49]Akinobu Teramoto, Rihito Kuroda, Masanori Komura, Kazufumi Watanabe, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/TSM.2005.863230
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337.[] Accurate circuit performance prediction model and lifetime prediction method of NBT stressed devices for highly reliable ULSI circuits.[2006 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS,(2006),199-+]Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000239593100049&DestApp=WOS
338.[] Accurate circuit performance prediction model and lifetime prediction method of NBT stressed devices for highly reliable ULSI circuits.[2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06,(2006),717-720]Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/icicdt.2006.220826
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[2005]
339.[] Hole 注入法によるNBTI評価手法及び寿命予測方法の開発.[電子情報通信学会技術研究報告. ED, 電子デバイス,105(435), (2005), 13-18]寺本 章伸, 渡辺 一史, 黒田 理人, 三富士 道彦, 山葉 隆久, 須川 成利, 大見 忠弘
340.[] Hole注入法によるNBTI評価手法及び寿命予測方法の開発.[電子情報通信学会技術研究報告,105(436(SDM2005 192-200)), (2005), 13-18]寺本章伸, 渡辺一史, 黒田理人, 三富士道彦, 山葉隆久, 須川成利, 大見忠弘
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