著書論文等- 黒田 理人 -
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件数:340件
[2008]
301.[] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface.[Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS,(2008),706-707]R. Kuroda, A. Teramoto, T. Suwa, Y. Nakao, S. Sugawa and T. Ohmi
302.[] The cleaning method which is able to keep the smoothness of SI (100).[Proceedings - Electrochemical Society,PV 2008-1,(2008),469-474]Li X, Gu X, Teramoto A, Kuroda R, Hasebe R, Suwa T, Yu N, Sugawa S, Ito T, Ohmi T.
http://www.scopus.com/inward/record.url?eid=52349100404&partnerID=40
303.[] The data analysis technique of the atomic force microscopy for the atomically flat silicon surface.[in proceedings of the 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2008,(2008),265-269]Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rhito Kuroda and Tadahiro Ohmi
304.[] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications.[in proc. 29th International Conference on the Physics of Semiconductors (ICPS 2008),(2008),602-603]Weitao Cheng, Akinobu Teramoto, Rhito Kuroda, Ching Foa Tye, Syuichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi
305.[] Performance comparison of ultrathin fully depleted silicon-on-insulator inversion-, intrinsic-, and accumulation-mode metal-oxide-semiconductor field-effect transistors.[JAPANESE JOURNAL OF APPLIED PHYSICS,47(4 Part 2),(2008),2668-2671]Kuroda, Rihito Teramoto, Akinobu Sugawa, Shigetoshi Ohmi, Tadahiro
10.1143/JJAP.47.2668
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000255449100072&DestApp=WOS
306.[] THE CLEANING METHOD WHICH IS ABLE TO KEEP THE SMOOTHNESS OF SI (100).[in proceedings of the International Semiconductor Technology Conference 2008,(2008),469-474]Xiang Li, Xun Gu, Akinobu Teramoto, Rihito Kuroda, Rui Hasebe, Tomoyuki Suwa, Ningmei Yu, Shigetoshi Sugawa, Takashi Ito and Tadahiro Ohmi
307.[] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs.[IEEE International Conference on Microelectronic Test Structures,(2008),155-159]Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe, Ching Foa Tye, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1109/ICMTS.2008.4509331
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000255545700028&DestApp=WOS
308.[] 大規模アレイTEGを用いた画素ソースフォロア相当のトランジスタのランダム・テレグラフ・シグナル・ノイズの統計的解析.[映像情報メディア学会技術報告,32(19(IST2008 8-18/CE2008 21-31)), (2008), 9-12]須川成利, 阿部健一, 藤澤孝文, 渡部俊一, 黒田理人, 宮本直人, 寺本章伸, 大見忠弘
309.[] Atomically Flat Gate Insulator/Silicon (100) Interface Formation Technology for High Performance LSI.[WPI & IFCAM Joint Workshop -Challenge of Interdisciplinary Materials Science to Technological Innovation of the 21st Century-,(2008),15-]Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa and Tadahiro Ohmi
[2007]
310.[] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations.[in proceedings of the 2007 IEEE International SOI Conference,(2007),55-56]R. Kuroda, A. Teramoto, C. Weitao, S. Sugawa and T. Ohmi
10.1109/SOI.2007.4357849
311.[] High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs.[MICROELECTRONIC ENGINEERING,84(9-10),(2007),2105-2108]Cheng, W. Teramoto, A. Kuroda, R. Hirayama, M. Ohmi, T.
10.1016/j.mee.2007.04.124
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=000247378600062&DestApp=WOS
312.[] Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic-and Accumulation- Mode MOSFETs.[Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS,(2007),412-413]Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
313.[] シリコン表面の原子オーダー平坦化技術.[電子情報通信学会技術研究報告,107(245(SDM2007 170-193)), (2007), 57-59]諏訪智之, 黒田理人, 寺本章伸, 大見忠弘
314.[] 大規模アレイTEGを用いたランダム・テレグラフ・シグナルの統計的評価.[電子情報通信学会技術研究報告,107(245(SDM2007 170-193)), (2007), 65-68]阿部健一, 須川成利, 黒田理人, 渡部俊一, 寺本章伸, 大見忠弘
315.[] Circuit level prediction of device performance degradation due to negative bias temperature stress.[MICROELECTRONICS RELIABILITY,47(6),(2007),930-936]Kuroda, Rihito Teramoto, Akinobu Watanabe, Kazufumi Mifuji, Michihiko Yamaha, Takahisa Sugawa, Shigetoshi Ohmi, Tadahiro
10.1016/j.microrel.2006.06.013
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000247185800012&DestApp=WOS
316.[] Analysis of Source Follower Random Telegraph Signal Using nMOS and pMOS Array TEG.[in proceedings of the 2007 International Image Sensor Workshop,(2007),62-65]Kenichi Abe, Shigetoshi Sugawa, Rihito Kuroda, Shunichi Watabe, Naoto, Miyamoto, Akinobu Teramoto, Tadahiro Ohmi, Yutaka Kamata and Katsuhiko Shibusawa
317.[] High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs.[in proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors,(2007),2105-2108]W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama and T. Ohmi
318.[] Revolutional progress of silicon technologies exhibiting very high speed performance over a 50-GHz clock rate.[IEEE TRANSACTIONS ON ELECTRON DEVICES,54(6),(2007),1471-1477]Ohmi, Tadahiro Teramoto, Akinobu Kuroda, Rihito Miyamoto, Naoto
10.1109/TED.2007.896391
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000246929200027&DestApp=WOS
319.[] Accuracy and applicability of low-frequency C-V measurement methods for characterization of ultrathin gate dielectrics with large current.[IEEE TRANSACTIONS ON ELECTRON DEVICES,54(5),(2007),1115-1124]Kuroda, Rihito Teramoto, Akinobu Komuro, Takanori Tatekawa, Hiroshi Sugawa, Shigetoshi Ohmi, Tadahiro
10.1109/TED.2007.893207
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000246033700025&DestApp=WOS
320.[] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantages.[Electrochemical Society Transactions on Silicon-on-Insulator Technology and Devices-13,6(4),(2007),113-118]R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, and T. Ohmi
10.1149/1.2728849
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