著書論文等- 黒田 理人 -
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件数:350件
[2009]
301.[] Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing.[JOURNAL OF THE ELECTROCHEMICAL SOCIETY,156(1),(2009),H10-H17]Hasebe, Rui Teramoto, Akinobu Kuroda, Rihito Suwa, Tomoyuki Sugawa, Shigetoshi Ohmi, Tadahiro
10.1149/1.2993153
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000261209800067&DestApp=WOS
302.[] A Pixel-Shared CMOS Image Sensor Using Lateral Overflow Gate.[2009 PROCEEDINGS OF ESSCIRC,(2009),241-+]Shin Sakai, Yoshiaki Tashiro, Nana Akahane, Rihito Kuroda, Koichi Mizobuchi, Shigetoshi Sugawa
10.1109/ESSCIRC.2009.5326026
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000276195800052&DestApp=WOS http://www.scopus.com/inward/record.url?eid=70350729796&partnerID=40
303.[] A Wide Dynamic Range Checkered-Color CMOS Image Sensor with IR-Cut RGB and Visible-to-Near-IR Pixels.[2009 IEEE SENSORS, VOLS 1-3,(2009),1648-1651]Shun Kawada, Shin Sakai, Nana Akahane, Rihito Kuroda, Shigetoshi Sugawa
10.1109/ICSENS.2009.5398511
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000279891700360&DestApp=WOS http://www.scopus.com/inward/record.url?eid=77951140974&partnerID=40
304.[] Three-step Room Temperature Wet Cleaning Process for Silicon Substrate.[ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES IX,145-146,(2009),189-192]Rui Hasebe, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
10.4028/www.scientific.net/SSP.145-146.189
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000265210900042&DestApp=WOS http://www.scopus.com/inward/record.url?eid=75849137597&partnerID=40
[2008]
305.[] Accurate negative bias temperature instability lifetime prediction based on hole injection.[MICROELECTRONICS RELIABILITY,48(10),(2008),1649-1654]Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
10.1016/j.microrel.2008.07.062
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000259844900005&DestApp=WOS http://www.scopus.com/inward/record.url?eid=50949115232&partnerID=40
306.[] Three-Step Room Temperature Cleaning of Bare Silicon Surface for Radical Based Semiconductor Manufacturing.[PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008),(2008),No1846-]Rui Hasebe, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa and Tadahiro Ohmi
307.[] 原子オーダ平坦化ウェハ表面のAFM評価手法及びデータ解析手法.[電子情報通信学会技術研究報告,108(236(SDM2008 149-168)), (2008), 75-78]譽田正宏, 寺本章伸, 諏訪智之, 黒田理人, 大見忠弘
308.[] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface.[Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS,(2008),706-707]R. Kuroda, A. Teramoto, T. Suwa, Y. Nakao, S. Sugawa and T. Ohmi
309.[] 3-step room temperature wet cleaning process for silicon substrate.[in proceedings of the 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2008),(2008),136-137]R. Hasebe, A. Teramoto, R Kuroda, T. Suwa, S. Sugawa and T.Ohmi
310.[] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits.[Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS,(2008),876-877]Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa and Tadahiro Ohmi
311.[] The data analysis technique of the atomic force microscopy for the atomically flat silicon surface.[in proceedings of the 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2008,(2008),265-269]Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rhito Kuroda and Tadahiro Ohmi
312.[] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications.[in proc. 29th International Conference on the Physics of Semiconductors (ICPS 2008),(2008),602-603]Weitao Cheng, Akinobu Teramoto, Rhito Kuroda, Ching Foa Tye, Syuichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi
313.[] Performance comparison of ultrathin fully depleted silicon-on-insulator inversion-, intrinsic-, and accumulation-mode metal-oxide-semiconductor field-effect transistors.[JAPANESE JOURNAL OF APPLIED PHYSICS,47(4),(2008),2668-2671]Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
10.1143/JJAP.47.2668
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000255449100072&DestApp=WOS http://www.scopus.com/inward/record.url?eid=54249094685&partnerID=40
314.[] THE CLEANING METHOD WHICH IS ABLE TO KEEP THE SMOOTHNESS OF SI (100).[in proceedings of the International Semiconductor Technology Conference 2008,(2008),469-474]Xiang Li, Xun Gu, Akinobu Teramoto, Rihito Kuroda, Rui Hasebe, Tomoyuki Suwa, Ningmei Yu, Shigetoshi Sugawa, Takashi Ito and Tadahiro Ohmi
315.[] 大規模アレイTEGを用いた画素ソースフォロア相当のトランジスタのランダム・テレグラフ・シグナル・ノイズの統計的解析.[映像情報メディア学会技術報告,32(19(IST2008 8-18/CE2008 21-31)), (2008), 9-12]須川成利, 阿部健一, 藤澤孝文, 渡部俊一, 黒田理人, 宮本直人, 寺本章伸, 大見忠弘
316.[] Atomically Flat Gate Insulator/Silicon (100) Interface Formation Technology for High Performance LSI.[WPI & IFCAM Joint Workshop -Challenge of Interdisciplinary Materials Science to Technological Innovation of the 21st Century-,(2008),15-]Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa and Tadahiro Ohmi
317.[] Characterization of MOSFETs intrinsic performance using in-wafer advanced Kelvin-contact device structure for high performance CMOS LSIs.[2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS,(2008),155-+]Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe, Ching Foa Tye, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/ICMTS.2008.4509331
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000255545700028&DestApp=WOS http://www.scopus.com/inward/record.url?eid=51349123166&partnerID=40
318.[] Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET.[ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference,(2008),83-86]R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, T. Ohmi
10.1109/ESSDERC.2008.4681704
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000262973300017&DestApp=WOS http://www.scopus.com/inward/record.url?eid=56749180185&partnerID=40
319.[] The cleaning method which is able to keep the smoothness of SI (100).[Proceedings - Electrochemical Society,PV 2008-1,(2008),469-474]Xiang Li, Xun Gu, Akinobu Teramoto, Rihito Kuroda, Rui Hasebe, Tomoyuki Suwa, Ningmei Yu, Shigetoshi Sugawa, Takashi Ito, Tadahiro Ohmi
http://www.scopus.com/inward/record.url?eid=52349100404&partnerID=40
[2007]
320.[] High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs.[Microelectronic Engineering,84(9-10),(2007),2105-2108]W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T. Ohmi
10.1016/j.mee.2007.04.124
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000247378600062&DestApp=WOS http://www.scopus.com/inward/record.url?eid=34248657305&partnerID=40
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