著書論文等- 黒田 理人 -
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件数:350件
[2010]
281.[] Impact of work function optimized S/D silicide contact for high current drivability CMOS.[the 217th ECS meeting,,(2010),No949-]Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, and T. Ohmi
282.[] Atomically Flattening Technology at 850oC for Si(100) Surface.[the 217th ECS meeting,(2010),No0951-]X. Li, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa, and T. Ohmi
283.[] Atomically Flattening Technology at 850 ˚C for Si(100) Surface.[Electrochemical Society Transactions,28(1),(2010),299-309]X. Li, T. Suwa, A. Teramoto, R. Kuroda, S. Sugawa, T. Ohmi
10.1149/1.3375615
284.[] Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS.[Electrochemical Society Transactions,28(1),(2010),315-324]Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, T. Ohmi
10.1149/1.3375617
285.[] Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor.[JAPANESE JOURNAL OF APPLIED PHYSICS,49(4),(2010),04DE03-]Shin Sakai, Yoshiaki Tashiro, Shun Kawada, Rihito Kuroda, Nana Akahane, Koichi Mizobuchi, Shigetoshi Sugawa
10.1143/JJAP.49.04DE03
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000277301300089&DestApp=WOS http://www.scopus.com/inward/record.url?eid=77952691250&partnerID=40
286.[] Statistical Evaluation of Dynamic Junction Leakage Current Fluctuation Using a Simple Arrayed Capacitors Circuit.[2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,(2010),683-688]Kenichi Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi
10.1109/IRPS.2010.5488751
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000287515600111&DestApp=WOS http://www.scopus.com/inward/record.url?eid=77957920263&partnerID=40
287.[] A Test Structure for Statistical Evaluation of pn Junction Leakage Current Based on CMOS Image Sensor Technology.[2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS,(2010),18-22]Kenichi Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi
10.1109/ICMTS.2010.5466868
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000287371500004&DestApp=WOS http://www.scopus.com/inward/record.url?eid=77953888171&partnerID=40
288.[] Ultra-low Series Resistance W/ErSi2/n(+)-Si and W/Pd2Si/p(+)-Si S/D Electrodes for Advanced CMOS Platform.[2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST,(2010),580-583]Rihito Kuroda, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/IEDM.2010.5703425
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000287997300149&DestApp=WOS http://www.scopus.com/inward/record.url?eid=79951836890&partnerID=40
[2009]
289.[] 色毎の飽和光量差を低減したWRGB市松画素LOFIC CMOSイメージセンサ.[映像情報メディア学会技術報告,33(56(IST2009 90-97)), (2009), 21-24]川田峻, 酒井伸, 赤羽奈々, 黒田理人, 須川成利
290.[] Impact of Very Low Series Resistance due to Raised Metal S/D Structure with Very Low Contact Resistance Silicide for sub-100-nm nMOSFET.[Extended Abstracts of the 2009 International Conference on SOLID STATE DEVICES AND MATERIALS 2009,(2009),994-995]Rihito Kuroda, Tatsunori Isogai, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
291.[] Pixel Scaling in CMOS Image Sensors with Lateral Overflow Integration Capacitor.[Extended Abstracts of the 2009 International Conference on SOLID STATE DEVICES AND MATERIALS,(2009),1062-1063]Yoshiaki Tashiro, Shin Sakai, Shun Kawada, Rihito Kuroda, Nana Akahane, Koichi Mizobuchi, and Shigetoshi Sugawa
292.[] n^+-、p^+-Si領域に最適なシリサイドを用いた高電流駆動能力トランジスタ.[電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス,109(257), (2009), 1-6]中尾 幸久, 黒田 理人, 田中 宏明, 寺本 章伸, 須川 成利, 大見 忠弘
293.[] n<sup>+</sup>‐,p<sup>+</sup>‐Si領域に最適なシリサイドを用いた高電流駆動能力トランジスタ.[電子情報通信学会技術研究報告,109(257(SDM2009 117-134)), (2009), 1-6]中尾幸久, 黒田理人, 田中宏明, 寺本章伸, 須川成利, 大見忠弘
294.[] Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces.[IEICE TRANSACTIONS ON ELECTRONICS,E92C(5),(2009),664-670]Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi
10.1587/transele.E92.C.664
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000266425800014&DestApp=WOS http://www.scopus.com/inward/record.url?eid=77950381720&partnerID=40
295.[] Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SiO2 Films by On-the-Fly Measurement.[Electrochemical Society Transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics-10,9(2),(2009),339-350]A. Teramoto, R. Kuroda, T. Suko, M. Sato, T. Tsuboi, S. Sugawa, and T. Ohmi
10.1149/1.3122100
296.[] Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SiO2 Films by On-the-Fly Measurement.[215th Meeting of the Electrochemical Society,(2009),No796-]A. Teramoto, R. Kuroda, T. Suko, M. Sato, T. Tsuboi, S. Sugawa, and T. Ohmi
297.[] A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits.[JAPANESE JOURNAL OF APPLIED PHYSICS,48(4),(2009),04C047-]Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
10.1143/JJAP.48.04C047
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000265652700048&DestApp=WOS http://www.scopus.com/inward/record.url?eid=77952522850&partnerID=40
298.[] Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface.[JAPANESE JOURNAL OF APPLIED PHYSICS,48(4),(2009),04C048-]Rihito Kuroda, Akinobu Teramoto, Yukihisa Nakao, Tomoyuki Suwa, Masahiro Konda, Rui Hasebe, Xiang Li, Tatsunori Isogai, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi
10.1143/JJAP.48.04C048
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000265652700049&DestApp=WOS http://www.scopus.com/inward/record.url?eid=77952493438&partnerID=40
299.[] Characterization for High-Performance CMOS Using In-Wafer Advanced Kelvin-Contact Device Structure.[IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,22(1),(2009),126-133]Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/TSM.2008.2010743
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000263269100018&DestApp=WOS http://www.scopus.com/inward/record.url?eid=59949097275&partnerID=40
300.[] Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs.[IEEE TRANSACTIONS ON ELECTRON DEVICES,56(2),(2009),291-298]Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Rui Hasebe, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/TED.2008.2010591
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000262816800019&DestApp=WOS http://www.scopus.com/inward/record.url?eid=59849101339&partnerID=40
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