著書論文等- 黒田 理人 -
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[]:著書 []:論文 []:総説・解説記事
件数:340件
[2009]
281.[] Pixel Scaling in CMOS Image Sensors with Lateral Overflow Integration Capacitor.[Extended Abstracts of the 2009 International Conference on SOLID STATE DEVICES AND MATERIALS,(2009),1062-1063]Yoshiaki Tashiro, Shin Sakai, Shun Kawada, Rihito Kuroda, Nana Akahane, Koichi Mizobuchi, and Shigetoshi Sugawa
282.[] Impact of Very Low Series Resistance due to Raised Metal S/D Structure with Very Low Contact Resistance Silicide for sub-100-nm nMOSFET.[Extended Abstracts of the 2009 International Conference on SOLID STATE DEVICES AND MATERIALS 2009,(2009),994-995]Rihito Kuroda, Tatsunori Isogai, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
283.[] n^+-、p^+-Si領域に最適なシリサイドを用いた高電流駆動能力トランジスタ.[電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス,109(257), (2009), 1-6]中尾 幸久, 黒田 理人, 田中 宏明, 寺本 章伸, 須川 成利, 大見 忠弘
284.[] n<sup>+</sup>‐,p<sup>+</sup>‐Si領域に最適なシリサイドを用いた高電流駆動能力トランジスタ.[電子情報通信学会技術研究報告,109(257(SDM2009 117-134)), (2009), 1-6]中尾幸久, 黒田理人, 田中宏明, 寺本章伸, 須川成利, 大見忠弘
285.[] A Pixel-Shared CMOS Image Sensor Using Lateral Overflow Gate.[in proceedings of the European Solid-State Circuits Conference 2009,(2009),240-243]Shin Sakai, Yoshiaki Tashiro, Nana Akahane, Rihito Kuroda, Koichi Mizobuchi, and Shigetoshi Sugawa
10.1109/ESSCIRC.2009.5326026
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000276195800052&DestApp=WOS
286.[] Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SiO2 Films by On-the-Fly Measurement.[Electrochemical Society Transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics-10,9(2),(2009),339-350]A. Teramoto, R. Kuroda, T. Suko, M. Sato, T. Tsuboi, S. Sugawa, and T. Ohmi
10.1149/1.3122100
287.[] Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SiO2 Films by On-the-Fly Measurement.[215th Meeting of the Electrochemical Society,(2009),No796-]A. Teramoto, R. Kuroda, T. Suko, M. Sato, T. Tsuboi, S. Sugawa, and T. Ohmi
288.[] Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces.[IEICE TRANSACTIONS ON ELECTRONICS,E92C(5),(2009),664-670]Konda, Masahiro Teramoto, Akinobu Suwa, Tomoyuki Kuroda, Rihito Ohmi, Tadahiro
10.1587/transele.E92.C.664
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000266425800014&DestApp=WOS
289.[] Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface.[JAPANESE JOURNAL OF APPLIED PHYSICS,48(4 Part 2 Sp. Iss. SI),(2009),04C048-]Kuroda, Rihito Teramoto, Akinobu Nakao, Yukihisa Suwa, Tomoyuki Konda, Masahiro Hasebe, Rui Li, Xiang Isogai, Tatsunori Tanaka, Hiroaki Sugawa, Shigetoshi Ohmi, Tadahiro
10.1143/JJAP.48.04C048
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000265652700049&DestApp=WOS
290.[] A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits.[JAPANESE JOURNAL OF APPLIED PHYSICS,48(4 Part 2 Sp. Iss. SI),(2009),04C047-]Cheng, Weitao Teramoto, Akinobu Tye, ChingFoa Kuroda, Rihito Sugawa, Shigetoshi Ohmi, Tadahiro
10.1143/JJAP.48.04C047
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000265652700048&DestApp=WOS
291.[] Characterization for High-Performance CMOS Using In-Wafer Advanced Kelvin-Contact Device Structure.[IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,22(1),(2009),126-133]Kuroda, Rihito Teramoto, Akinobu Komuro, Takanori Sugawa, Shigetoshi Ohmi, Tadahiro
10.1109/TSM.2008.2010743
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000263269100018&DestApp=WOS
292.[] Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs.[IEEE TRANSACTIONS ON ELECTRON DEVICES,56(2),(2009),291-298]Kuroda, Rihito Suwa, Tomoyuki Teramoto, Akinobu Hasebe, Rui Sugawa, Shigetoshi Ohmi, Tadahiro
10.1109/TED.2008.2010591
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000262816800019&DestApp=WOS
293.[] Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing.[JOURNAL OF THE ELECTROCHEMICAL SOCIETY,156(1),(2009),H10-H17]Hasebe, Rui Teramoto, Akinobu Kuroda, Rihito Suwa, Tomoyuki Sugawa, Shigetoshi Ohmi, Tadahiro
10.1149/1.2993153
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000261209800067&DestApp=WOS
294.[] Three-step room temperature wet cleaning process for silicon substrate.[Solid State Phenomena,145-146,(2009),189-192]Rui Hasebe, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
10.4028/www.scientific.net/SSP.145-146.189
http://www.scopus.com/inward/record.url?eid=75849137597&partnerID=40
[2008]
295.[] Accurate negative bias temperature instability lifetime prediction based on hole injection.[MICROELECTRONICS RELIABILITY,48(10),(2008),1649-1654]Teramoto, Akinobu Kuroda, Rihito Sugawa, Shigetoshi Ohmi, Tadahiro
10.1016/j.microrel.2008.07.062
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000259844900005&DestApp=WOS
296.[] Three-Step Room Temperature Cleaning of Bare Silicon Surface for Radical Based Semiconductor Manufacturing.[PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008),(2008),No1846-]Rui Hasebe, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa and Tadahiro Ohmi
297.[] 原子オーダ平坦化ウェハ表面のAFM評価手法及びデータ解析手法.[電子情報通信学会技術研究報告,108(236(SDM2008 149-168)), (2008), 75-78]譽田正宏, 寺本章伸, 諏訪智之, 黒田理人, 大見忠弘
298.[] Atomically Flat Gate Insulator/Silicon (100) Interface Formation Introducing High Mobility, Ultra-low Noise, and Small Characteristics Variation CMOSFET.[in proceedings of the 38th European Solid-State Device Research Conference (ESSDERC 2008),(2008),83-86]R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, and T. Ohmi
10.1109/ESSDERC.2008.4681704
299.[] 3-step room temperature wet cleaning process for silicon substrate.[in proceedings of the 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2008),(2008),136-137]R. Hasebe, A. Teramoto, R Kuroda, T. Suwa, S. Sugawa and T.Ohmi
300.[] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits.[Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS,(2008),876-877]Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa and Tadahiro Ohmi
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