著書論文等- 黒田 理人 -
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件数:340件
[2011]
261.[] A prototype high-speed CMOS image sensor with 10,000,000 fps burst-frame rate and 10,000 fps continuous-frame rate.[Proceedings of SPIE - The International Society for Optical Engineering,7876,(2011)]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Nana Akahane, Rihito Kuroda, Shigetoshi Sugawa
10.1117/12.872207
http://www.scopus.com/inward/record.url?eid=79951882980&partnerID=40
262.[] High reliable SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing.[Extend Abstracts of 2011 International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology (IWDTF),(2011),107-108]X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
263.[] Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface.[ULSI PROCESS INTEGRATION 7,41(7),(2011),147-156]Akinobu Teramoto, Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi
10.1149/1.3633294
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000309539600014&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84863159795&partnerID=40
264.[] Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces.[ULSI PROCESS INTEGRATION 7,41(7),(2011),365-373]Hiroaki Tanaka, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Tomoyuki Suwa, Kazumasa Kawase, Shigetoshi Sugawa, Tadahiro Ohmi
10.1149/1.3633317
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000309539600037&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84857307293&partnerID=40
[2010]
265.[] Ultra-low Series Resistance W/ErSi2/n+-Si and W/Pd2Si/p+-Si S/D Electrodes for Advanced CMOS Platform.[2010 IEEE International electron device meeting,(2010),580-583]Rihito Kuroda, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/IEDM.2010.5703425
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000287997300149&DestApp=WOS
266.[] ULSI用低抵抗コンタクトのための低バリアハイトメタルシリサイドの形成.[電子情報通信学会技術研究報告,110(241(SDM2010 152-170)), (2010), 25-30]田中宏明, 黒田理人, 中尾幸久, 寺本章伸, 須川成利, 大見忠弘
267.[] Drastic reduction of the low frequency noise in Si(100) p-MOSFETs.[2010 International Conference on SOLID STATE DEVICES AND MATERIALS,(2010),41-42]P. Gaubert, A. Teramoto, R. Kuroda, Y. Nakao, H. Tanaka, T. Ohmi
268.[] Large Scale Test Circuits for Systematic Evaluation of Variability and Noise of MOSFETs’ Electrical Characteristics.[2010 International Conference on SOLID STATE DEVICES AND MATERIALS,(2010),804-805]Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
269.[] Impact of Channel Direction Dependent Low Field Hole Mobility on Si(100).[2010 International Conference on SOLID STATE DEVICES AND MATERIALS,(2010),51-52]Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
270.[] High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance.[2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, IEICE Technical Report ED2010-119, SDM2010-120,(2010),303-308]Yukihisa NAKAO, Rihito KURODA, Hiroaki TANAKA, Akinobu TERAMOTO, Shigetoshi SUGAWA, Tadahiro OHMI
271.[] High Integrity Gate Insulator Films on Atomically Flat Silicon Surface.[2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, IEICE Technical Report ED2010-93, SDM2010-94,(2010),183-188]X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
272.[] STATISTICAL EVALUATION OF DYNAMIC JUNCTION LEAKAGE CURRENT FLUCTUATION USING A SIMPLE ARRAYED CAPACITORS CIRCUIT.[In proceedings of the 2010 International Reliability Physics Symposium,(2010),683-688]K. Abe, T. Fujisawa, H. Suzuki, S. Watabe, R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi
10.1109/IRPS.2010.5488751
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000287515600111&DestApp=WOS
273.[] Atomically Flattening Technology at 850oC for Si(100) Surface.[the 217th ECS meeting,(2010),No0951-]X. Li, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa, and T. Ohmi
274.[] Impact of work function optimized S/D silicide contact for high current drivability CMOS.[the 217th ECS meeting,,(2010),No949-]Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, and T. Ohmi
275.[] A Test Structure for Statistical Evaluation of pn Junction Leakage Current Based on CMOS Image Sensor Technology.[Proceeding of the 2010 International Conference on Microelectronics Test Structures,(2010),18-22]Kenich Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda, Shigetoshi Sugawa, Akinobu Teramoto, and Tadahiro Ohmi
10.1109/ICMTS.2010.5466868
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000287371500004&DestApp=WOS
276.[] Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS.[Electrochemical Society Transactions,28(1),(2010),315-324]Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, T. Ohmi
10.1149/1.3375617
277.[] Atomically Flattening Technology at 850 ˚C for Si(100) Surface.[Electrochemical Society Transactions,28(1),(2010),299-309]X. Li, T. Suwa, A. Teramoto, R. Kuroda, S. Sugawa, T. Ohmi
10.1149/1.3375615
278.[] Pixel Scaling in Complementary Metal Oxide Silicon Image Sensor with Lateral Overflow Integration Capacitor.[JAPANESE JOURNAL OF APPLIED PHYSICS,49(4 Part 2 Sp. Iss. SI),(2010),04DE03-]Sakai, Shin Tashiro, Yoshiaki Kawada, Shun Kuroda, Rihito Akahane, Nana Mizobuchi, Koichi Sugawa, Shigetoshi
10.1143/JJAP.49.04DE03
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000277301300089&DestApp=WOS
[2009]
279.[] 色毎の飽和光量差を低減したWRGB市松画素LOFIC CMOSイメージセンサ.[映像情報メディア学会技術報告,33(56(IST2009 90-97)), (2009), 21-24]川田峻, 酒井伸, 赤羽奈々, 黒田理人, 須川成利
280.[] A Wide Dynamic Range Checkered-Color CMOS Image Sensor with IR-Cut RGB and Visible-to-Near-IR Pixels.[in proceeding of the IEEE Sensors 2009 Conference,(2009),1048-1051]Shun Kawada, Shin Sakai, Nana Akahane, Rihito Kuroda, and Shigetoshi Sugawa
10.1109/ICSENS.2009.5398511
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000279891700360&DestApp=WOS
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