著書論文等- 黒田 理人 -
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[]:著書 []:論文 []:総説・解説記事
件数:350件
[2011]
261.[] Science-based New Silicon Technologies Exhibiting Super High Performance due to Radical-reaction-based Semiconductor Manufacturing.[JOURNAL OF THE KOREAN PHYSICAL SOCIETY,59(2),(2011),391-401]Tadahiro Ohmi, Hiroaki Tanaka, Tomoyuki Suwa, Xiang Li, Rihito Kuroda
10.3938/jkps.59.391
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000294079600001&DestApp=WOS http://www.scopus.com/inward/record.url?eid=79961213324&partnerID=40
262.[] Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface.[2011 International Image Sensor Workshop,(2011),38-41]Rihito Kuroda, Taiki Nakazawa, Katsuhiko Hanzawa, Shigetoshi Sugawa
263.[] WRGB LOFIC CMOSイメージセンサを用いた青緑及び黄色領域を含む全色域の色再現性の向上.[映像情報メディア学会技術報告,35(19(IST2011 17-32)), (2011), 33-35]川田峻, 合田康之, 黒田理人, 須川成利
264.[] 10Mfps高速CMOSイメージセンサの高S/N読み出し動作.[映像情報メディア学会技術報告,35(19(IST2011 17-32)), (2011), 37-40]栃木靖久, 半澤克彦, 加藤祐理, 赤羽奈々, 黒田理人, 須川成利
265.[] Analysis of the Low-Frequency Noise Reduction in Si(100) Metal-Oxide-Semiconductor Field-Effect Transistors.[JAPANESE JOURNAL OF APPLIED PHYSICS,50(4),(2011),04DC01-1-04DC01-6]Philippe Gaubert, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi
10.1143/JJAP.50.04DC01
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000289722400022&DestApp=WOS http://www.scopus.com/inward/record.url?eid=79955443799&partnerID=40
266.[] Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface.[JAPANESE JOURNAL OF APPLIED PHYSICS,50(4),(2011),04DC03-1-04DC03-6]Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
10.1143/JJAP.50.04DC03
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000289722400024&DestApp=WOS http://www.scopus.com/inward/record.url?eid=79955385547&partnerID=40
267.[] バースト10Mfpsと連続10Kfpsの撮像速度を有する高速CMOSイメージセンサのプロトタイプ試作評価.[映像情報メディア学会技術報告,35(17(IST2011 10-16/CE2011 16-22)), (2011), 27-30]須川成利, 栃木靖久, 半澤克彦, 加藤祐理, 赤羽奈々, 黒田理人
268.[] A prototype high-speed CMOS image sensor with 10,000,000 burst-frame rate and 10,000 continuous-frame rate.[IS&T/SPIE Electronic Imaging,(2011),78760G-1-78760G-8]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Nana Akahane, Rihito Kuroda, Shigetoshi Sugawa
269.[] A prototype high-speed CMOS image sensor with 10,000,000 fps burst-frame rate and 10,000 fps continuous-frame rate.[Proceedings of SPIE - The International Society for Optical Engineering,7876,(2011)]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Nana Akahane, Rihito Kuroda, Shigetoshi Sugawa
10.1117/12.872207
http://www.scopus.com/inward/record.url?eid=79951882980&partnerID=40
270.[] High reliable SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing.[Extend Abstracts of 2011 International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology (IWDTF),(2011),107-108]X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
271.[] A robust color signal processing with wide dynamic range WRGB CMOS image sensor.[DIGITAL PHOTOGRAPHY VII,7876,(2011),78760W-1-78760W-8]Shun Kawada, Rihito Kuroda, Shigetoshi Sugawa
10.1117/12.872285
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000293824800032&DestApp=WOS http://www.scopus.com/inward/record.url?eid=79951894793&partnerID=40
272.[] Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy.[ELECTROCHEMICAL AND SOLID STATE LETTERS,14(9),(2011),H351-H353]Shin-Ichiro Kobayashi, Youn-Geun Kim, Rui Wen, Kohei Yasuda, Hirokazu Fukidome, Tomoyuki Suwa, Rihito Kuroda, Xiang Li, Akinobu Teramoto, Tadahiro Ohmi, Kingo Itaya
10.1149/1.3597657
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000292521900011&DestApp=WOS http://www.scopus.com/inward/record.url?eid=79960235736&partnerID=40
273.[] Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces.[ULSI PROCESS INTEGRATION 7,41(7),(2011),365-373]Hiroaki Tanaka, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Tomoyuki Suwa, Kazumasa Kawase, Shigetoshi Sugawa, Tadahiro Ohmi
10.1149/1.3633317
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000309539600037&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84857307293&partnerID=40
274.[] Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface.[ULSI PROCESS INTEGRATION 7,41(7),(2011),147-156]Akinobu Teramoto, Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi
10.1149/1.3633294
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000309539600014&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84863159795&partnerID=40
[2010]
275.[] ULSI用低抵抗コンタクトのための低バリアハイトメタルシリサイドの形成.[電子情報通信学会技術研究報告,110(241(SDM2010 152-170)), (2010), 25-30]田中宏明, 黒田理人, 中尾幸久, 寺本章伸, 須川成利, 大見忠弘
276.[] Large Scale Test Circuits for Systematic Evaluation of Variability and Noise of MOSFETs’ Electrical Characteristics.[2010 International Conference on SOLID STATE DEVICES AND MATERIALS,(2010),804-805]Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
277.[] Impact of Channel Direction Dependent Low Field Hole Mobility on Si(100).[2010 International Conference on SOLID STATE DEVICES AND MATERIALS,(2010),51-52]Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
278.[] Drastic reduction of the low frequency noise in Si(100) p-MOSFETs.[2010 International Conference on SOLID STATE DEVICES AND MATERIALS,(2010),41-42]P. Gaubert, A. Teramoto, R. Kuroda, Y. Nakao, H. Tanaka, T. Ohmi
279.[] High Integrity Gate Insulator Films on Atomically Flat Silicon Surface.[2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, IEICE Technical Report ED2010-93, SDM2010-94,(2010),183-188]X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi
280.[] High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance.[2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, IEICE Technical Report ED2010-119, SDM2010-120,(2010),303-308]Yukihisa NAKAO, Rihito KURODA, Hiroaki TANAKA, Akinobu TERAMOTO, Shigetoshi SUGAWA, Tadahiro OHMI
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