著書論文等- 黒田 理人 -
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[]:著書 []:論文 []:総説・解説記事
件数:340件
[2011]
241.[] Large Scale Test Circuits for High Speed and Highly Accurate Evaluation of Variability and Noise of MOSFETs’ Electrical Characteristics.[Japanese Journal of Applied Physics,50(10),(2011),106701-1-106701-11]Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Rihito Kuroda, Naoto Miyamoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1143/JJAP.50.106701
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000296085700074&DestApp=WOS
242.[] Evaluation for Anomalous Stress Induced Leakage Current of Gate SiO2 Films using Array Test Pattern.[IEEE Transactions on Electron Devices,58(10),(2011),3307-3313]Yuki Kumagai, Akinobu Teramoto, Takuya Inatsuka, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1109/TED.2011.2161991
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000295100300011&DestApp=WOS
243.[] 埋め込み構造によるMOSFETにおけるランダム・テレグラフ・ノイズの低減.[電子情報通信学会技術研究報告,111(249(SDM2011 97-114)), (2011), 5-9]鈴木裕彌, 黒田理人, 寺本章伸, 米澤彰浩, 松岡弘章, 中澤泰希, 阿部健一, 須川成利, 大見忠弘
244.[] 異常Stress Induced Leakage Currentの発生・回復特性の統計的評価.[電子情報通信学会技術研究報告,111(249(SDM2011 97-114)), (2011), 11-16]稲塚卓也, 熊谷勇喜, 黒田理人, 寺本章伸, 須川成利, 大見忠弘
245.[] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper.[2011 International Conference on SOLID STATE DEVICES AND MATERIALS,(2011),905-906]Y. Nakao, R. Kuroda, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi
246.[] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology.[2011 International Conference on SOLID STATE DEVICES AND MATERIALS,(2011),903-904]Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
247.[] Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET.[2011 International Conference on SOLID STATE DEVICES AND MATERIALS,(2011),851-852]Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Shigetoshi Sugawa, and Tadahiro Ohmi
248.[] Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films.[2011 International Conference on SOLID STATE DEVICES AND MATERIALS,(2011),841-842]T. Inatsuka, Y. Kumagai, R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi
249.[] レーザー共焦点微分干渉顕微鏡による超平坦Si(100)表面の原子ステップ観察.[化学系学協会東北大会プログラムおよび講演予稿集,2011, (2011), 206-]安田興平, 文鋭, 金潤根, 小林慎一郎, 吹留博一, 諏訪智之, 黒田理人, 李翔, 寺本章伸, 大見忠弘, 板谷謹悟
250.[] Science-based New Silicon Technologies Exhibiting Super High Performance.[Journal of the Korean Physical Society,59(2),(2011),391-401]Tadahiro Ohmi, Hiroaki Tanaka, Tomoyuki Suwa, Xiang Li, Rihito Kuroda
10.3938/jkps.59.391
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000294079600001&DestApp=WOS
251.[] Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface.[2011 International Image Sensor Workshop,(2011),38-41]Rihito Kuroda, Taiki Nakazawa, Katsuhiko Hanzawa, Shigetoshi Sugawa
252.[] Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy.[Electrochemical and Solid-State Letters,14(9),(2011),H351-H353]Shin-Ichiro Kobayashi, Youn-Geun Kim, Rui Wen, Kohei Yasuda, Hirokazu Fukidome, Tomoyuki Suwa, Rihito Kuroda, Xiang Li, Akinobu Teramoto, Tadahiro Ohmi, Kingo Itaya
10.1149/1.3597657
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000292521900011&DestApp=WOS
253.[] Formation Speed of Atomically Flat surface on Si(100) in Ultra-Pure Argon.[Microelectronic Engineering,88(10),(2011),3133-3139]Xiang Li, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi,
10.1016/j.mee.2011.06.014
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000297400900016&DestApp=WOS
254.[] WRGB LOFIC CMOSイメージセンサを用いた青緑及び黄色領域を含む全色域の色再現性の向上.[映像情報メディア学会技術報告,35(19(IST2011 17-32)), (2011), 33-35]川田峻, 合田康之, 黒田理人, 須川成利
255.[] 10Mfps高速CMOSイメージセンサの高S/N読み出し動作.[映像情報メディア学会技術報告,35(19(IST2011 17-32)), (2011), 37-40]栃木靖久, 半澤克彦, 加藤祐理, 赤羽奈々, 黒田理人, 須川成利
256.[] Analysis of the Low-Frequency Noise Reduction in Si(100) Metal-Oxide-Semiconductor Field-Effect Transistors.[Japanese Journal of Applied Physics,50(4),(2011),04DC01-1-04DC01-6]Philippe Gaubert, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi
10.1143/JJAP.50.04DC01
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000289722400022&DestApp=WOS
257.[] Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface.[Japanese Journal of Applied Physics,50(4),(2011),04DC03-1-04DC03-6]Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
10.1143/JJAP.50.04DC03
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000289722400024&DestApp=WOS
258.[] バースト10Mfpsと連続10Kfpsの撮像速度を有する高速CMOSイメージセンサのプロトタイプ試作評価.[映像情報メディア学会技術報告,35(17(IST2011 10-16/CE2011 16-22)), (2011), 27-30]須川成利, 栃木靖久, 半澤克彦, 加藤祐理, 赤羽奈々, 黒田理人
259.[] A prototype high-speed CMOS image sensor with 10,000,000 burst-frame rate and 10,000 continuous-frame rate.[IS&T/SPIE Electronic Imaging,(2011),78760G-1-78760G-8]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Nana Akahane, Rihito Kuroda, Shigetoshi Sugawa
260.[] A robust color signal processing with wide dynamic range WRGB CMOS image sensor.[IS&T/SPIE Electronic Imaging,7876,(2011),78760W-1-78760W-8]Shun Kawada, Rihito Kuroda, Shigetoshi Sugawa
10.1117/12.872285
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000293824800032&DestApp=WOS
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