著書論文等- 黒田 理人 -
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[]:著書 []:論文 []:総説・解説記事
件数:340件
[2012]
221.[] A Novel Chemically, Thermally and Electrically Robust Cu Interconnect Structure with an Organic Non-porous Ultralow-k Dielectric Fluorocarbon (k=2.2).[Proceeding of 2012 Symposium on VLSI Technology,(2012),119-120]X. Gu, A. Teramoto, R. Kuroda, Y. Tomita, T. Nemoto, S.-i. Kuroki, S. Sugawa, T. Ohmi
10.1109/VLSIT.2012.6242490
222.[] Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects.[Japanese Journal of Applied Physics,51(5),(2012),05EC03-1-05EC03-6]Xun Gu, Yugo Tomita, Takenao Nemoto, Kotaro Miyatani, Akane Saito, Yasuo Kobayashi, Akinobu Teramoto, Rihito Kuroda, Shin-Ichiro Kuroki, Kazumasa Kawase, Toshihisa Nozawa, Takaaki Matsuoka, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1143/JJAP.51.05EC03
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000305797900013&DestApp=WOS
223.[] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400oC.[221st Meeting of The Electrochemical Society,(2012),No.738-]Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
224.[] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400oC.[ECS Transactions,45(3),(2012),421-428]Yukihisa Nakao, Akinobu Teramoto, T. Watanabe, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1149/1.3700907
225.[] Cu Single Damascene Integration of an Organic Nonporous Ultralow-k Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD.[IEEE Transactions on Electron Devices,59(5),(2012),1445-1453]Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Rihito Kuroda, Shin-Ichiro Kuroki, Kazumasa Kawase, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1109/TED.2012.2187659
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000303202900029&DestApp=WOS
226.[] 紫外光高感度・高信頼性を有する原子オーダー平坦Si表面を用いたフォトダイオードのドーパントプロファイル.[映像情報メディア学会技術報告,36(20(IST2012 16-28)), (2012), 19-22]中澤泰希, 黒田理人, 幸田安真, 須川成利
227.[] Statistical Analysis of Random Telegraph Noise Reduction Effect by Separating Channel From the Interface.[IEEE International Reliability Physics Symposium,(2012),3B.5.1-3B.5.7]A. Yonezawa, A. Teramoto, R. Kuroda, H. Suzuki, S. Sugawa, and T. Ohmi
10.1109/IRPS.2012.6241809
228.[] Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films.[Japanese Journal of Applied Physics,51(4),(2012),04DC02-1-04DC02-6]Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1143/JJAP.51.04DC02
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000303928600017&DestApp=WOS
229.[] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80,000 MOSFETs in 80 s.[IEEE International Conference on Microelectronic Test Structures,(2012),131-136]Yuki Kumagai, Takuya Inatsuka, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1109/ICMTS.2012.6190631
230.[] 原子オーダー平坦ゲート絶縁膜/シリコン界面を有する金属―絶縁膜―半導体デバイスの高性能化.[財団法人青葉工学振興会 翠巒,(26), (2012), 6]黒田 理人
231.[] バースト1Tpixel/sと連続780Mpixel/sの撮像速度を有するグローバルシャッタ高速CMOSイメージセンサ.[映像情報メディア学会技術報告,36(18(IST2012 6-15/CE2012 18-27)), (2012), 9-12]栃木靖久, 半澤克彦, 加藤祐理, 黒田理人, 武藤秀樹, 広瀬竜太, 冨永秀樹, 田窪健二, 近藤泰志, 須川成利
232.[] A Global-Shutter CMOS Image Sensor with Readout Speed of 1Tpixel/s Burst and 780Mpixel/s Continuous.[2012 IEEE International Solid-State Circuits Conference,55,(2012),382-383]Yasuhisa Tochigi, Katsuhiko Hanzawaa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa
10.1109/ISSCC.2012.6177046
233.[] On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology.[Japanese Journal of Applied Physics,51(2),(2012),02BA01-1-02BA01-6]Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1143/JJAP.51.02BA01
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000303481400001&DestApp=WOS
234.[] Photodiode dopant structure with atomically flat Si surface for highsensitivity and stability to UV light.[IS&T/SPIE Electronic Imaging,8298,(2012),82980M-1-82980M-8]Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, Shigetoshi Sugawa
10.1117/12.907727
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000302533800020&DestApp=WOS
235.[] Advanced Direct-Polishing Process Development of Non-Porous Ultralow-k Dielectric Fluorocarbon with Plasma Treatment on Cu Interconnect.[Journal of The Electrochemical Society,159(4),(2012),H407-H411]Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa and Tadahiro Ohmi
10.1149/2.049204jes
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000300488300091&DestApp=WOS
236.[] 19-8 高速CMOSイメージセンサによる毎秒1000万コマ以上の撮像(第19部門[テーマ講演]科学技術のフロンティアを切り拓くイメージセンサ技術).[映像情報メディア学会年次大会講演予稿集,2012(0), (2012), 19-8-1-_19-8-2_]須川 成利, 栃木 靖久, 宮内 健, 武田 徹, 黒田 理人
[2011]
237.[] Development of Direct-polish Process of CMP and Post-CMP Clean for Next Generation Advanced Cu Interconnects.[International Conference on Planarization&CMP,(2011),150-157]Xun Gu, Yugo Tomita, Takenao Nemoto, Akinobu Teramoto, Ricardo Duyos Mateo, Takeshi Sakai, Rihito Kuroda, Shin-Ichiro Kuroki, Shigetoshi Sugawa, and Tadahiro Ohmi
238.[] Highly Reliable Radical SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing.[Japanese Journal of Applied Physics,50(10),(2011),10PB05-1-10PB05-7]Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1143/JJAP.50.10PB05
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000297695500011&DestApp=WOS
239.[] Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces.[220th Meeting of The Electrochemical Society,(2011),No.2159-]H. Tanaka, A. Teramoto, R. Kuroda, Y. Nakao, T. Suwa, S. Sugawa, and T. Ohmi
240.[] Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface.[220th Meeting of The Electrochemical Society,(2011),No.2123-]A. Teramoto, X. Li, R. Kuroda, T. Suwa, S. Sugawa, and T. Ohmi
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