著書論文等- 黒田 理人 -
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[]:著書 []:論文 []:総説・解説記事
件数:340件
[2013]
201.[] Demonstrating Distribution of SILC Values at Individual Leakage Spots.[IEEE International Reliability Physics Symposium 2013,(2013),GD.5.1-]Takuya Inatsuka, Rihito Kuroda, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1109/IRPS.2013.6532088
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000325097500148&DestApp=WOS
202.[] The Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region.[IEEE International Reliability Physics Symposium 2013,(2013),XT.11.1-]A. Yonezawa, A. Teramoto, T. Obara, R. Kuroda, S. Sugawa and T. Ohmi
10.1109/IRPS.2013.6532126
203.[] Stress induced leakage current generated by hot-hole injection.[Microelectronic Engineering,109,(2013),298-301]Akinobu Teramoto, Hyeonwoo Park, Takuya Inatsuka, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
10.1016/j.mee.2013.03.116
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000321229200076&DestApp=WOS
204.[] 画素ソースフォロワ相当の埋め込み・表面チャネルトランジスタのランダム・テレグラフ・ノイズ統計的解析.[映像情報メディア学会技術報告,37(19(IST2013 6-14)), (2013), 19-22]黒田理人, 米澤彰浩, 寺本章伸, LI Tsung‐Ling, 栃木靖久, 須川成利
205.[] A UV Si-photodiode with almost 100% internal Q.E and high transmittance on-chip multilayer dielectric stack.[IS&T/SPIE Electronic Imaging 2013,8659,(2013),86590J-1-86590J-6]Y. Koda, R. Kuroda, T. Nakazwa, Y. Nakao, S. Sugawa
10.1117/12.2005574
206.[] A CMOS Image Sensor using Floating Capacitor Load Readout Operation.[IS&T/SPIE Electronic Imaging 2013,8659,(2013),86590I-1-86590I-9]S. Wakashima, Y. Goda, T. L. Li, R. Kuroda, S. Sugawa
10.1117/12.2004892
207.[] New Analog Readout Architecture for Low Noise CMOS Image Sensor Using Column-Parallel Forward Noise-Canceling Circuity.[IS&T/SPIE Electronic Imaging 2013,8659,(2013),86590E-1-86590E-9]T. L. Li, Y. Goda, S. Wakashima, R. Kuroda, S. Sugawa
10.1117/12.2003741
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000322004300013&DestApp=WOS
208.[] A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias.[IS&T/SPIE Electronic Imaging 2013,8659,(2013),86590D-1-86590D-9]R. Kuroda, A. Yonezawa, A. Teramoto, T. L. Li, Y. Tochigi, S. Sugawa
10.1117/12.2005759
209.[] Color reproductivity improvement with additional virtual color filters for WRGB image sensor.[IS&T/SPIE Electronic Imaging 2013,8659,(2013),865205-1-865205-7]Shun Kawada, Rihito Kuroda, Shigetoshi Sugawa
10.1117/12.2003320
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000319554900005&DestApp=WOS
210.[] A 2.8μm Pixel-Pitch 55 ke- Full-Well Capacity Global-Shutter Complementary Metal Oxide Semiconductor Image Sensor Using Lateral Overflow Integration Capacitor.[Japanese Journal of Applied Physics,52(4),(2013),04CE01-1-04CE01-5]Shin Sakai, Yoshiaki Tashiro, Rihito Kuroda, and Shigetoshi Sugawa
10.7567/JJAP.52.04CE01
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000320002400063&DestApp=WOS
211.[] A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous.[IEEE Journal of Solid-State Circuits,48(1),(2013),329-338]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo and Shigetoshi Sugawa
10.1109/JSSC.2012.2219685
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000313362400028&DestApp=WOS
212.[] 情報センシングの研究開発動向.[映像情報メディア学会誌,67(11), (2013), 972-982]須川 成利, 赤井 大輔, 鈴木 秀征, 闍柳 功, 高橋 秀和, 黒田 理人, 池辺 将之, 浜本 隆之, 小室 孝, 香川 景一郎, 大竹 浩
[2012]
213.[] 学部時代のこと,現在のシリコン半導体集積回路の研究.[青葉工業会(東北大学工学部同窓会) 青葉工業会報,(56), (2012), 56-58]黒田 理人
214.[] シリコンLSI:微細化に替る高性能化の道.[電子情報通信学会技術研究報告,112(263(SDM2012 89-97)), (2012), 27-32]大見忠弘, 中尾幸久, 黒田理人, 諏訪智之, 田中宏明, 須川成利
215.[] PECVD法を用いたゲートスペーサー用高品質シリコン窒化膜の低温形成プロセス.[電子情報通信学会技術研究報告,112(263(SDM2012 89-97)), (2012), 21-26]中尾幸久, 寺本章伸, 黒田理人, 諏訪智之, 田中宏明, 須川成利, 大見忠弘
216.[] A 2.8μm pixel-pitch 55 ke- Full-Well Capacity Global-Shutter CMOS Image Sensor Using Lateral Overflow Integration Capacitor.[2012 International Conference on Solid State Devices and Materials,(2012),1109-1110]S. Sakai, Y. Tashiro, R. Kuroda and S. Sugawa
217.[] A Column-Parallel Hybrid ADC using SAR and Single-Slope with Error Correction for CMOS Image Sensors.[2012 International Conference on Solid State Devices and Materials,(2012),1113-1114]Tsung-Ling Li, Shin Sakai, Shun Kawada, Yasuyuki Goda, Shunichi Wakashima, Rihito Kuroda and Shigetoshi Sugawa
218.[] A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and Its Noise.[IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,25(3),(2012),303-309]K. Abe, T. Fujisawa, H. Suzuki, S. Watabe, R. Kuroda, S. Sugawa, A. Teramoto, T. Ohmi
10.1109/TSM.2012.2202751
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000314401300003&DestApp=WOS
219.[] 高速CMOSイメージセンサによる毎秒1000万コマ以上の撮像.[映像情報メディア学会年次大会講演予稿集(CD-ROM),2012, (2012), ROMBUNNO.19-8-]須川成利, 栃木靖久, 宮内健, 武田徹, 黒田理人
220.[] 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits.[2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012),(2012),56-61]Hidetoshi Utsumi, Ryohei Kasahara, Yukihisa Nakao, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
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