著書論文等- 黒田 理人 -
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[]:著書 []:論文 []:総説・解説記事
件数:340件
[2013]
181.[] A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors.[IEEE TRANSACTIONS ON ELECTRON DEVICES,60(10),(2013),3555-3561]Rihito Kuroda, Akihiro Yonezawa, Akinobu Teramoto, Tsung-Ling Li, Yasuhisa Tochigi, and Shigetoshi Sugawa
10.1109/TED.2013.2278980
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000324928900082&DestApp=WOS
182.[] Highly UV-light sensitive and highly robust CMOS image sensor with 97dB wide dynaamic range and 200-1100 nm spectral sensitivity.[Asian Symposium on Advanced Image Sensors and Imaging Systems,(2013),15-16]Satoshi Nasuno, Shun Kawada, Yasumasa Koda, Rihito Kuroda, and Shigetoshi Sugawa
183.[] MOSFETのサブスレショルド領域におけるRandom Telegraph Noiseの時定数解析.[電子情報通信学会技術研究報告,113(247(SDM2013 88-98)), (2013), 51-56]米澤彰浩, 寺本章伸, 小原俊樹, 黒田理人, 須川成利, 大見忠弘
184.[] 内部量子効率100%のPD技術とオンチップ高透過積層膜を組み合わせた紫外光高感度・高信頼性Siフォトダイオード.[電子情報通信学会技術研究報告,113(247(SDM2013 88-98)), (2013), 21-25]幸田安真, 黒田理人, 中尾幸久, 須川成利
185.[] 内部量子効率100%のPD技術とオンチップ高透過積層膜を組み合わせた紫外光高感度・高信頼性Siフォトダイオード (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,113(247), (2013), 21-25]幸田 安真, 黒田 理人, 中尾 幸久, 須川 成利
186.[] MOSFETのサブスレショルド領域におけるRandom Telegraph Noiseの時定数解析 (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,113(247), (2013), 51-56]米澤 彰浩, 寺本 章伸, 小原 俊樹, 黒田 理人, 須川 成利, 大見 忠弘
187.[] Extraction of Time Constants Ratio over Nine Orders of Magnitude for Understanding Random Telegraph Noise in MOSFETs.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),722-723]T. Obara, A. Yonezawa, A. Teramoto, R. Kuroda, S. Sugawa, and T. Ohmi
188.[] A Wide Dynamic Range CMOS Image Sensor with 200-1100 nm Spectral Sensitivity and High Robustness to Ultraviolet Light Exposure.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),878-879]Satoshi Nasuno, Shun Kawada, Yasumasa Koda, Taiki Nakazawa, Katsuhiko Hanzawa, Rihito Kuroda and Shigetoshi Sugawa
189.[] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),702-703]Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
190.[] A CMOS Image Sensor Using Column-Parallel Forward Noise-Canceling Circuitry.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),874-875]Tsung-Ling Li, Shunichi Wakashima, Yasuyuki Goda, Rihito Kuroda and Shigetoshi Sugawa
191.[] Ultra-high Speed Image Sensors for Scientific Imaging.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),872-873]Rihito Kuroda, Yasuhisa Tochigi, Ken Miyauchi, Tohru Takeda, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, and Shigetoshi Sugawa
192.[] 200‐1000nmの広光波長帯域に感度を有する高紫外光照射耐性CMOSイメージセンサ.[映像情報メディア学会技術報告,37(40(IST2013 42-54)), (2013), 21-24]黒田理人, 川田峻, 那須野悟史, 中澤泰希, 幸田安真, 半澤克彦, 須川成利
193.[] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80000 MOSFETs in 80 s.[IEEE Transactions on Semiconductor Manufacturing,26(3),(2013),288-295]Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
10.1109/TSM.2013.2260568
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000322720700005&DestApp=WOS
194.[] Impact of Injected Carrier Types to Stress Induced Leakage Current Using Substrate Hot Carrier Injection Stress.[2013 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2013),(2013),75-78]H. W. Park, A. Teramoto, T. Inatsuka, R. Kuroda, S. Sugawa, and T. Ohmi
195.[] Stress induced leakage current generated by hot-hole injection.[18th Conference of “Insulating Films on Semiconductors” (infos2013) Book of Abstracts,(2013),156-157]A. Teramoto, H.W. Park, T. Inatsuka, R. Kuroda, S. Sugawa, T. Ohmi
196.[] A FSI CMOS Image Sensor with 200-1000 nm Spectral Response.[2013 International Image Sensor Workshop,(2013),61-64]Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa Koda, Katsuhiko Hanzawa and Shigetoshi Sugawa
197.[] White‐RGBイメージセンサを用いた仮想カラーフィルタ情報の追加による被写体のスペクトル推定精度の改善.[映像情報メディア学会技術報告,37(27(IST2013 28-38/ME2013 70-80)), (2013), 17-20]川田峻, 黒田理人, 須川成利
198.[] オンチップ高透過積層膜を有する紫外光高感度・高信頼性Siフォトダイオード.[映像情報メディア学会技術報告,37(22(IST2013 15-27)), (2013), 37-40]幸田安真, 黒田理人, 中澤泰希, 中尾幸久, 須川成利
199.[] 浮遊容量負荷読み出しを用いたCMOSイメージセンサ.[映像情報メディア学会技術報告,37(22(IST2013 15-27)), (2013), 33-36]若嶋駿一, 合田康之, LI Tsung‐Ling, 黒田理人, 須川成利
200.[] A Column-Parallel Hybrid Analog-to-Digital Converter Using Successive-Approximation-Register and Single-Slope Architectures with Error Correction for Complementary Metal Oxide Silicon Image Sensors.[Japanese Journal of Applied Physics,52(4),(2013),04CE04-1-04CE04-7]Tsung-Ling Li, Shin Sakai, Shun Kawada, Yasuyuki Goda, Shunichi Wakashima, Rihito Kuroda, and Shigetoshi Sugawa
10.7567/JJAP.52.04CE04
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000320002400066&DestApp=WOS
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