著書論文等- 黒田 理人 -
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[]:著書 []:論文 []:総説・解説記事
件数:350件
[2014]
181.[] A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors.[Proceedings of SPIE - The International Society for Optical Engineering,9022,(2014)]A. Yonezawa, R. Kuroda, A. Teramoto, T. Obara, S. Sugawa
10.1117/12.2041090
http://www.scopus.com/inward/record.url?eid=84897414554&partnerID=40
182.[] Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second.[Proceedings of SPIE - The International Society for Optical Engineering,9022,(2014),902205-1-902205-9]F. Shao, D. Kimoto, K. Furukawa, H. Sugo, T. Takeda, K. Miyauchi, Y. Tochigi, R. Kuroda, S. Sugawa
10.1117/12.2040859
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000334024600004&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84897425414&partnerID=40
183.[] Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor.[Proceedings of SPIE - The International Society for Optical Engineering,9022,(2014),902203-1-902203-12]K. Miyauchi, Tohru Takeda, K. Hanzawa, Y. Tochigi, S. Sakai, R. Kuroda, H. Tominaga, R. Hirose, K. Takubo, Y. Kondo, S. Sugawa
10.1117/12.2042373
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000334024600002&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84897393415&partnerID=40
184.[] Analyzing Correlation between Multiple Traps in RTN Characteristics.[2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,(2014),4A.6.1-4A.6.7]Toshiki Obara, Akinobu Teramoto, Akihiro Yonezawa, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
10.1109/IRPS.2014.6860644
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000343833200062&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84905663761&partnerID=40
185.[] Demonstrating individual leakage path from random telegraph signal of stress induced leakage current.[IEEE International Reliability Physics Symposium Proceedings,(2014),GD.1.1-GD.1.5]A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa, T. Ohmi
10.1109/IRPS.2014.6861144
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000343833200146&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84905638335&partnerID=40
186.[] A Novel Analysis of Oxide Breakdown based on Dynamic Observation using Ultra-High Speed Video Capturing Up to 10,000,000 Frames Per Second.[2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,(2014),3F.3.1-3F.3.4]Rihito Kuroda, Fan Shao, Daiki Kimoto, Kiichi Furukawa, Hidetake Sugo, Tohru Takeda, Ken Miyauchi, Yasuhisa Tochigi, Akinobu Teramoto, Shigetoshi Sugawa
10.1109/IRPS.2014.6860637
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000343833200055&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84905652252&partnerID=40
187.[] Si image sensors with wide spectral response and high robustness to ultraviolet light exposure.[IEICE ELECTRONICS EXPRESS,11(10),(2014),1-16]Rihito Kuroda, Shigetoshi Sugawa
10.1587/elex.11.20142004
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000344882400012&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84901387035&partnerID=40
188.[] A Highly Ultraviolet Light Sensitive and Highly Robust Image Sensor Technology Based on Flattened Si Surface.[ITE Transactions on Media Technology and Applications,2(2),(2014),123-130]Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa Koda, Katsuhiko Hanzawa, Shigetoshi Sugawa
10.3169/mta.2.123
http://www.scopus.com/inward/record.url?eid=84901413570&partnerID=40
189.[] A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure.[Proceedings of SPIE - The International Society for Optical Engineering,9022,(2014)]Takahiro Akutsu, Shun Kawada, Yasumasa Koda, Taiki Nakazawa, Rihito Kuroda, Shigetoshi Sugawa
10.1117/12.2040764
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000334024600019&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84897386184&partnerID=40
[2013]
190.[] 映像情報メディア年報2013シリーズ(第12回)情報センシングの研究開発動向.[一般社団法人 映像情報メディア学会 映像情報メディア学会誌,67(11), (2013), 972-982]須川成利,高柳 功,高橋秀和,黒田理人,池辺将之,浜本隆之,小室 孝,香川景一郎,大竹 浩,赤井大輔,鈴木秀征
191.[] A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors.[IEEE TRANSACTIONS ON ELECTRON DEVICES,60(10),(2013),3555-3561]Rihito Kuroda, Akihiro Yonezawa, Akinobu Teramoto, Tsung-Ling Li, Yasuhisa Tochigi, Shigetoshi Sugawa
10.1109/TED.2013.2278980
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000324928900082&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84884812636&partnerID=40
192.[] Highly UV-light sensitive and highly robust CMOS image sensor with 97dB wide dynaamic range and 200-1100 nm spectral sensitivity.[Asian Symposium on Advanced Image Sensors and Imaging Systems,(2013),15-16]Satoshi Nasuno, Shun Kawada, Yasumasa Koda, Rihito Kuroda, and Shigetoshi Sugawa
193.[] MOSFETのサブスレショルド領域におけるRandom Telegraph Noiseの時定数解析.[電子情報通信学会技術研究報告,113(247(SDM2013 88-98)), (2013), 51-56]米澤彰浩, 寺本章伸, 小原俊樹, 黒田理人, 須川成利, 大見忠弘
194.[] 内部量子効率100%のPD技術とオンチップ高透過積層膜を組み合わせた紫外光高感度・高信頼性Siフォトダイオード.[電子情報通信学会技術研究報告,113(247(SDM2013 88-98)), (2013), 21-25]幸田安真, 黒田理人, 中尾幸久, 須川成利
195.[] 内部量子効率100%のPD技術とオンチップ高透過積層膜を組み合わせた紫外光高感度・高信頼性Siフォトダイオード (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,113(247), (2013), 21-25]幸田 安真, 黒田 理人, 中尾 幸久, 須川 成利
196.[] MOSFETのサブスレショルド領域におけるRandom Telegraph Noiseの時定数解析 (シリコン材料・デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,113(247), (2013), 51-56]米澤 彰浩, 寺本 章伸, 小原 俊樹, 黒田 理人, 須川 成利, 大見 忠弘
197.[] Stress induced leakage current generated by hot-hole injection.[MICROELECTRONIC ENGINEERING,109,(2013),298-301]Akinobu Teramoto, Hyeonwoo Park, Takuya Inatsuka, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
10.1016/j.mee.2013.03.116
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000321229200076&DestApp=WOS http://www.scopus.com/inward/record.url?eid=84876857902&partnerID=40
198.[] Extraction of Time Constants Ratio over Nine Orders of Magnitude for Understanding Random Telegraph Noise in MOSFETs.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),722-723]T. Obara, A. Yonezawa, A. Teramoto, R. Kuroda, S. Sugawa, and T. Ohmi
199.[] A Wide Dynamic Range CMOS Image Sensor with 200-1100 nm Spectral Sensitivity and High Robustness to Ultraviolet Light Exposure.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),878-879]Satoshi Nasuno, Shun Kawada, Yasumasa Koda, Taiki Nakazawa, Katsuhiko Hanzawa, Rihito Kuroda and Shigetoshi Sugawa
200.[] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design.[Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,(2013),702-703]Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
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