著書論文等- 黒田 理人 -
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件数:340件
[2019]
1.[] High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction Fabrication Using Low-damage Ion Beam Etching.[2019 International Conference on Solid State Devices and Materials,(2019),401-402]Hyeonwoo Park, Akinobu Teramoto, Jun-ichi Tsuchimoto, Keiichi Hashimoto, Tomoyuki Suwa, Marie Hayashi, Rihito Kuroda and Shigetoshi Sugawa
2.[] An Accuracy Improved Resistance Measurement Platform for Evaluation of Emerging Memory Materials.[2019 International Conference on Solid State Devices and Materials,(2019),531-532]Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa and Shigetoshi Sugawa
3.[] A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method.[Sensors (Basel, Switzerland),19(12),(2019),2755-1-2755-14]Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Shigetoshi Sugawa
10.3390/s19122755
http://www.ncbi.nlm.nih.gov/pubmed/31248157 http://www.scopus.com/inward/record.url?eid=85068984720&partnerID=40
4.[] Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with In-pixel Trench Capacitor Memory Array.[International Image Sensor Workshop 2019,(2019),266-269]Manabu Suzuki, Rihito Kuroda, and Shigetoshi Sugawa
5.[] A VGA Optical Filter-less CMOS Image Sensor with UV-selective and Visible Light Channels by Differential Spectral Response Pixels.[International Image Sensor Workshop 2019,(2019),302-305]Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, and Shigetoshi Sugawa
6.[] 高SN比吸光イメージングによる真空チャンバー内ガス濃度分布計測.[映像情報メディア学会技術報告,43(18(IST2019 35-39)), (2019), 11‐14-14]高橋圭吾, DA SILVA Yhang Ricardo Sipauba, 沼尾直毅, 黒田理人, 藤原康行, 村田真麻, 石井秀和, 森本達郎, 森本達郎, 諏訪智之, 寺本章伸, 須川成利, 須川成利
7.[] Investigation of Rotating Spokes in DC Magnetron Plasma Using High speed Video Camera Over 1 Million Frames Per Second.[The 15th International Symposium on Sputtering and Plasma Processes,(2019),FS1-3]Shintaro Yamazaki, Tetsuya Goto, Manabu Suzuki, Rihito Kuroda and Shigetoshi Sugawa
8.[] IEDM 2018参加レポート.[映像情報メディア学会誌 = The journal of the Institute of Image Information and Television Engineers,73(3), (2019), 481-486]黒田 理人
9.[] Solid State Devices and Materials.[JAPANESE JOURNAL OF APPLIED PHYSICS,58,(2019)]Hosoi, Takuji, Yaguchi, Hiroyuki, Kageshima, Hiroyuki, Chikamatsu, Masayuki, Fujiwara, Hirokazu, Furuta, Mamoru, Hirama, Kazuyuki, Johguchi, Kou, Kato, Toshiaki, Kawaguchi, Kenichi, Kikuchi, Akihiko, Kinoshita, Kentaro, Kitada, Hideki, Kobayashi, Masaharu, Kuroda, Rihito, Kuroki, Shinichiro, Matsudai, Tomoko, Minari, Takeo, Morioka, Hiroshi, Nagashio, Kosuke, Nakada, Kazuyoshi, Nakatsuka, Osamu, Oiwa, Akira, Okada, Hiroyuki, Okuda, Takafumi, Ono, Teruo, Sakamoto, Toshitsugu, Shiojima, Kenji, Shirao, Mizuki, Takeyama, Mayumi, Tanaka, Tetsu, Tatsuoka, Hirokazu, Tawara, Takehiko, Tayagaki, Takeshi, Tokuda, Takashi, Tsuda, Kunio, Ueki, Makoto, Yamamoto, Kazuhiko, Yeh, Wenchang
10.7567/1347-4065/ab04f2
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000464309900001&DestApp=WOS
10.[] Resistance measurement platform for statistical analysis of next generation memory materials.[IEEE International Conference on Microelectronic Test Structures,2019-March,(2019),70-75]Takeru Maeda, Yuya Omura, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa
10.1109/ICMTS.2019.8730955
http://www.scopus.com/inward/record.url?eid=85067883560&partnerID=40
11.[] 横型オーバーフロー蓄積トレンチ容量を有する飽和電子数2430万個・近赤外高感度CMOSイメージセンサ (情報センシング).[映像情報メディア学会技術報告 = ITE technical report,43(11), (2019), 27-32]村田 真麻, 黒田 理人, 藤原 康行, 大塚 雄介, 柴田 寛, 柴口 拓, 鎌田 浩, 三浦 規之, 栗山 尚也, 須川 成利
12.[] 0.1aFの検出精度を有するCMOS近接容量イメージセンサ.[映像情報メディア学会技術報告,43(11(IST2019 12-22)), (2019), 49‐54-54]山本将大, 黒田理人, 鈴木学, 後藤哲也, 羽森寛, 村上真一, 安田俊朗, 横道やよい, 須川成利, 須川成利
13.[] 横型オーバーフロー蓄積トレンチ容量を有する飽和電子数2430万個・近赤外高感度CMOSイメージセンサ.[映像情報メディア学会技術報告,43(11(IST2019 12-22)), (2019), 27‐32-]村田真麻, 黒田理人, 藤原康行, 大塚雄介, 柴田寛, 柴口拓, 鎌田浩, 三浦規之, 栗山尚也, 須川成利
14.[] Emerging Tech 電子デバイス 混載MRAMとEUVは量産へ FinFET後継「GAA」も : 量子コンピューターや5Gに照準、「2018 IEDM」報告.[日経エレクトロニクス = Nikkei electronics : sources of innovation,(1200), (2019), 61-68]黒田 理人
15.[] Over 100 million frames per second high speed global shutter CMOS image sensor.[Proceedings of SPIE - The International Society for Optical Engineering,11051,(2019)]R. Kuroda, M. Suzuki, S. Sugawa
10.1117/12.2524492
http://www.scopus.com/inward/record.url?eid=85061771369&partnerID=40
16.[] A high-sensitivity compact gas concentration sensor using ultraviolet light absorption with a heating function for a high-precision trimethyl aluminum gas supply system.[Japanese Journal of Applied Physics,58(SB),(2019),SBBL04-1-SBBL04-6]Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa
10.7567/1347-4065/aafe69
http://www.scopus.com/inward/record.url?eid=85065186054&partnerID=40
17.[] A CMOS image sensor with dual pixel reset voltage for high accuracy ultraviolet light absorption spectral imaging.[Japanese Journal of Applied Physics,58(SB),(2019),SBBL03-1-SBBL03-6]Yusuke Aoyagi, Yasuyuki Fujihara, Maasa Murata, Hiroya Shike, Rihito Kuroda, Shigetoshi Sugawa
10.7567/1347-4065/aaffc1
http://www.scopus.com/inward/record.url?eid=85065214256&partnerID=40
18.[] SiN<inf>x</inf> deposition at low temperature using uv-irradiated nh<inf>3</inf>.[ECS Transactions,89,(2019),31-36]Y. Shiba, A. Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, S. Sugawa
10.1149/08904.0031ecst
http://www.scopus.com/inward/record.url?eid=85070062459&partnerID=40
19.[] A CMOS Proximity Capacitance Image Sensor with 16μ m Pixel Pitch, 0.1aF Detection Accuracy and 60 Frames per Second.[Technical Digest - International Electron Devices Meeting, IEDM,2018-December,(2019),660-663]M. Yamamoto, R. Kuroda, M. Suzuki, T. Goto, H. Hamori, S. Murakami, T. Yasuda, S. Sugawa
10.1109/IEDM.2018.8614636
http://www.scopus.com/inward/record.url?eid=85061777664&partnerID=40
20.[] A 24.3Me <sup>-</sup> Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging.[Technical Digest - International Electron Devices Meeting, IEDM,2018-December,(2019),225-228]M. Murata, R. Kuroda, Y. Fujihara, Y. Aoyagi, H. Shibata, T. Shibaguchi, Y. Kamata, N. Miura, N. Kuriyama, S. Sugawa
10.1109/IEDM.2018.8614590
http://www.scopus.com/inward/record.url?eid=85061830162&partnerID=40
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