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件数:112件
[2014]
61.[] Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer.[J Appl Phys,115(17),(2014),17C719-]Ishikawa, S.a and Sato, H.b and Yamanouchi, M.a b and Ikeda, S.a b and Fukami, S.b and Matsukura, F and Ohno, H.a b c
10.1063/1.4862724
http://www.scopus.com/inward/record.url?eid=2-s2.0-84903893318&partnerID=40
62.[] Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect.[Appl Phys Lett,104(21),(2014),212406-]Kanai, S.a and Nakatani, Y.b and Yamanouchi, M.a c and Ikeda, S.a c and Sato, H.c and Matsukura, F and Ohno, H.a c d
10.1063/1.4880720
http://www.scopus.com/inward/record.url?eid=2-s2.0-84901770005&partnerID=40
[2013]
63.[] Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions.[Eur Conf Rad Effects Compon Syst,(2013),6937425-]Kobayashi, D.a b and Kakehashi, Y.c and Hirose, K.a b and Onoda, S.d and Makino, T.d and Ohshima, T.d and Ikeda, S.e f and Yamanouchi, M.e f and Sato, H.g and Enobio, E.C.g and Endoh, T.h i and Ohno, H
10.1109/RADECS.2013.6937425
http://www.scopus.com/inward/record.url?eid=2-s2.0-84929012593&partnerID=40
64.[] Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer.[J Appl Phys,113(17),(2013),17C721-]Ishikawa, S.a and Sato, H.b and Yamanouchi, M.a b and Ikeda, S.a b and Fukami, S.b and Matsukura, F and Ohno, H.a b c
10.1063/1.4798499
http://www.scopus.com/inward/record.url?eid=2-s2.0-84877764802&partnerID=40
65.[] Size dependence of magnetic properties of nanoscale CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic easy axis observed by ferromagnetic resonance.[Appl. Phys. Express,6(6),(2013),063002-]Mizunuma, K.a and Yamanouchi, M.a b and Sato, H.b and Ikeda, S.a b and Kanai, S.a and Matsukura, F and Ohno, H.a b c
10.7567/APEX.6.063002
http://www.scopus.com/inward/record.url?eid=2-s2.0-84880901872&partnerID=40
66.[] Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers.[Appl Phys Lett,102(24),(2013),242405-]Sinha, J.a and Hayashi, M.a and Kellock, A.J.b and Fukami, S.c and Yamanouchi, M.c d and Sato, H.c and Ikeda, S.c d and Mitani, S.a and Yang, S.-H.b and Parkin, S.S.P.b and Ohno, H
10.1063/1.4811269
http://www.scopus.com/inward/record.url?eid=2-s2.0-84879833577&partnerID=40
67.[] Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper.[Appl Phys Lett,102(21),(2013),212408-]Yamanouchi, M.a b and Chen, L.a b and Kim, J.c and Hayashi, M.c and Sato, H.a and Fukami, S.a and Ikeda, S.a b and Matsukura, F and Ohno, H.a b d
10.1063/1.4808033
http://www.scopus.com/inward/record.url?eid=2-s2.0-84879088152&partnerID=40
68.[] CoNi Films with perpendicular magnetic anisotropy prepared by alternate monoatomic layer deposition.[Appl. Phys. Express,6(7),(2013),073010-]Fukami, S.a and Sato, H.a and Yamanouchi, M.a b and Ikeda, S.a b and Ohno, H
10.7567/APEX.6.073010
http://www.scopus.com/inward/record.url?eid=2-s2.0-84880821155&partnerID=40
69.[] MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis.[IEEE Trans Magn,49(7),(2013),6558971-]Sato, H.a and Yamanouchi, M.a b and Ikeda, S.a b and Fukami, S.a and Matsukura, F and Ohno, H.a b c
10.1109/TMAG.2013.2251326
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70.[] Fabrication of a 99%-energy-less nonvolatile multi-functional CAM chip using hierarchical power gating for a massively-parallel full-text-search engine.[Dig Tech Pap Symp VLSI Technol,(2013),6576611-]Matsunaga, S.a and Sakimura, N.b and Nebashi, R.b and Tsuji, Y.b and Morioka, A.b and Sugibayashi, T.b and Miura, S.b and Honjo, H.b and Kinoshita, K.a and Sato, H.a and Fukami, S.a and Natsui, M and Mochizuki, A.a and Ikeda, S.a c and Endoh, T.a d and Ohno, H.a c and Hanyu, T.a c
http://www.scopus.com/inward/record.url?eid=2-s2.0-84883339889&partnerID=40
71.[] Fabrication of a 99%-energy-less nonvolatile multi-functional CAM chip using hierarchical power gating for a massively-parallel full-text-search engine.[IEEE Symp VLSI Circuits Dig Tech Pap,(2013),6578736-]Matsunaga, S.a and Sakimura, N.b and Nebashi, R.b and Tsuji, Y.b and Morioka, A.b and Sugibayashi, T.b and Miura, S.b and Honjo, H.b and Kinoshita, K.a and Sato, H.a and Fukami, S.a and Natsui, M and Mochizuki, A.a and Ikeda, S.a c and Endoh, T.a d and Ohno, H.a c and Hanyu, T.a c
http://www.scopus.com/inward/record.url?eid=2-s2.0-84883786160&partnerID=40
72.[] Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications.[IEICE Electron. Express,10(23),(2013)]Suzuki, D.a and Natsui, M.a b and Mochizuki, A.a and Miura, S.c and Honjo, H.c and Kinoshita, K.a and Sato, H.a and Ikeda, S and Endoh, T.a d e and Ohno, H.a b e f and Hanyu, T.a b e
10.1587/elex.10.20130772
http://www.scopus.com/inward/record.url?eid=2-s2.0-84890352209&partnerID=40
73.[] Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm.[Tech. Dig. Int. Electron Meet. IEDM,(2013),6724550-]Sato, H.a and Yamamoto, T.a b and Yamanouchi, M.a c and Ikeda, S.a c and Fukami, S.a and Kinoshita, K.a and Matsukura, F and Kasai, N.a and Ohno, H.a c d
10.1109/IEDM.2013.6724550
http://www.scopus.com/inward/record.url?eid=2-s2.0-84894381849&partnerID=40
74.[] Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO.[Appl Phys Lett,103(26),(2013),262407-]Zhang, C.a and Yamanouchi, M.a b and Sato, H.b and Fukami, S.b and Ikeda, S.a b and Matsukura, F and Ohno, H.a b c
10.1063/1.4859656
http://www.scopus.com/inward/record.url?eid=2-s2.0-84891615006&partnerID=40
[2012]
75.[] Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO/CoFe(B) based stack structures.[IEEE Trans Magn,48(11),(2012),6332756-]Ikeda, S.a b and Koizumi, R.a and Sato, H.b and Yamanouchi, M.a b and Miura, K.a b d and Mizunuma, K.a and Gan, H.b and Matsukura, F and Ohno, H.a b c
10.1109/TMAG.2012.2203588
http://www.scopus.com/inward/record.url?eid=2-s2.0-84867828281&partnerID=40
76.[] CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions.[IEEE Magn. Lett.,3,(2012),6189858-]Sato, H.a and Yamanouchi, M.a and Miura, K c and Ikeda, S.a b and Koizumi, R.b and Matsukura, F.a b and Ohno, H.a b
10.1109/LMAG.2012.2190722
http://www.scopus.com/inward/record.url?eid=2-s2.0-84860520656&partnerID=40
77.[] Scalability prospect of three-terminal magnetic domain-wall motion device.[IEEE Trans Magn,48(7),(2012),6151834-]Fukami, S.a and Ishiwata, N.a and Kasai, N.a and Yamanouchi, M.a and Sato, H.a and Ikeda, S and Ohno, H.a b
10.1109/TMAG.2012.2187792
http://www.scopus.com/inward/record.url?eid=2-s2.0-84862993875&partnerID=40
78.[] Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure.[Appl Phys Lett,101(2),(2012),022414-]Sato, H.a and Yamanouchi, M.a b and Ikeda, S.a b and Fukami, S.a and Matsukura, F.a c and Ohno, H
10.1063/1.4736727
http://www.scopus.com/inward/record.url?eid=2-s2.0-84863946704&partnerID=40
[2011]
79.[] Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers.[Appl. Phys. Express,4(2),(2011),023002-]Mizunuma, K.a and Yamanouchi, M.b and Ikeda, S and Sato, H.b and Yamamoto, H.c and Gan, H.-D.b and Miura, K.a b c and Hayakawa, J.c and Matsukura, F.a b and Ohno, H.a b
10.1143/APEX.4.023002
http://www.scopus.com/inward/record.url?eid=2-s2.0-79951588579&partnerID=40
80.[] Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures.[J Appl Phys,109(7),(2011),07C711-]Mizunuma, K.a and Ikeda, S and Sato, H.b and Yamanouchi, M.b and Gan, H.D.b and Miura, K.a b c and Yamamoto, H.c and Hayakawa, J.c and Matsukura, F.a b and Ohno, H.a b
10.1063/1.3554092
http://www.scopus.com/inward/record.url?eid=2-s2.0-79955458474&partnerID=40
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