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件数:112件
[2016]
41.[] Magnetic Properties of CoFeB-MgO Stacks with Different Buffer-Layer Materials (Ta or Mo).[IEEE Trans Magn,52(7),(2016),7378950-]Watanabe, K.a and Fukami, S.b c and Sato, H.b c and Matsukura, F.a b d and Ohno, H
10.1109/TMAG.2016.2514525
http://www.scopus.com/inward/record.url?eid=2-s2.0-84977108916&partnerID=40
[2015]
42.[] Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm.[Tech. Dig. Int. Electron Meet. IEDM,2015-February(February),(2015),7047160-]Ikeda, S.a b c and Sato, H.a b and Honjo, H.a and Enobio, E.C.I.c and Ishikawa, S.c and Yamanouchi, M.b c and Fukami, S.a b and Kanai, S.c and Matsukura, F.a c d and Endoh, T.a b e and Ohno, H
10.1109/IEDM.2014.7047160
http://www.scopus.com/inward/record.url?eid=2-s2.0-84938252667&partnerID=40
43.[] In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis.[Jpn. J. Appl. Phys.,54(4),(2015),04DM03-]Hirayama, E.a and Kanai, S.a and Sato, K.b and Yamanouchi, M.a c and Sato, H.c d and Ikeda, S.a c d and Matsukura, F.a b c and Ohno, H
10.7567/JJAP.54.04DM03
http://www.scopus.com/inward/record.url?eid=2-s2.0-84926391055&partnerID=40
44.[] Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses.[Jpn. J. Appl. Phys.,54(4),(2015),04DM04-]Watanabe, K.a and Ishikawa, S.a and Sato, H.b c and Ikeda, S.a b c and Yamanouchi, M.a b and Fukami, S.b c and Matsukura, F.a b d and Ohno, H
10.7567/JJAP.54.04DM04
http://www.scopus.com/inward/record.url?eid=2-s2.0-84926348825&partnerID=40
45.[] Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions.[J Appl Phys,117(17),(2015),17B708-]Hirayama, E.a and Kanai, S.a and Sato, H.b c and Matsukura, F.a b d and Ohno, H
10.1063/1.4908149
http://www.scopus.com/inward/record.url?eid=2-s2.0-84923651136&partnerID=40
46.[] Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO.[Appl Phys Lett,107(1),(2015),012401-]Zhang, C.a and Fukami, S.b c and Sato, H.b c and Matsukura, F.a b d and Ohno, H
10.1063/1.4926371
http://www.scopus.com/inward/record.url?eid=2-s2.0-84935471853&partnerID=40
47.[] 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance.[IEEE Int. Mem. Workshop, IMW,(2015),7150264-]Koike, H.a f and Miura, S.a and Honjo, H.a and Watanabe, T.a f and Sato, H.a b and Sato, S.a and Nasuno, T.a f and Noguchi, Y.a f and Yasuhira, M.a and Tanigawa, T.a f and Muraguchi, M.a d f and Niwa, M.a and Ito, K.a and Ikeda, S.a b f and Ohno, H.a b c e and Endoh, T
10.1109/IMW.2015.7150264
http://www.scopus.com/inward/record.url?eid=2-s2.0-84939526411&partnerID=40
48.[] CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures.[IEEE Magn. Lett.,6,(2015),5700303-]Enobio, E.C.I.a and Sato, H.b c and Fukami, S.b c and Matsukura, F.a b d and Ohno, H
10.1109/LMAG.2015.2475718
http://www.scopus.com/inward/record.url?eid=2-s2.0-84944081260&partnerID=40
49.[] Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure.[Dig Tech Pap Symp VLSI Technol,2015-August,(2015),7223644-]Suzuki, D.a b and Natsui, M and Mochizuki, A.a b and Miura, S.a and Honjo, H.a and Sato, H.a b and Fukami, S.a b and Ikeda, S.a b and Endoh, T.a b d and Ohno, H.a b c and Hanyu, T.a b c
10.1109/VLSIT.2015.7223644
http://www.scopus.com/inward/record.url?eid=2-s2.0-84951047646&partnerID=40
50.[] 10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control.[Dig Tech Pap Symp VLSI Technol,2015-August,(2015),7223661-]Honjo, H.a and Sato, H.a b and Ikeda, S.a b f and Sato, S.a and Watanebe, T.a f and Miura, S.a and Nasuno, T.a f and Noguchi, Y.a f and Yasuhira, M.a and Tanigawa, T.a f and Koike, H.a f and Muraguchi, M.a d f and Niwa, M.a and Ito, K.a and Ohno, H.a b c e and Endoh, T
10.1109/VLSIT.2015.7223661
http://www.scopus.com/inward/record.url?eid=2-s2.0-84950997819&partnerID=40
51.[] Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure.[IEEE Symp VLSI Circuits Dig Tech Pap,2015-August,(2015),7231371-]Suzuki, D.a b and Natsui, M and Mochizuki, A.a b and Miura, S.a and Honjo, H.a and Sato, H.a b and Fukami, S.a b and Ikeda, S.a b and Endoh, T.a b d and Ohno, H.a b c and Hanyu, T.a b c
10.1109/VLSIC.2015.7231371
http://www.scopus.com/inward/record.url?eid=2-s2.0-84957867185&partnerID=40
52.[] Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction.[Appl Phys Lett,107(13),(2015),132404-]Hirayama, E.a and Kanai, S.a b and Ohe, J.c and Sato, H.b d and Matsukura, F.a b e and Ohno, H
10.1063/1.4932092
http://www.scopus.com/inward/record.url?eid=2-s2.0-84942936211&partnerID=40
53.[] Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis.[Appl Phys Lett,107(15),(2015),152405-]Takeuchi, Y.a b and Sato, H.c d and Fukami, S.c d and Matsukura, F.a b c and Ohno, H
10.1063/1.4933256
http://www.scopus.com/inward/record.url?eid=2-s2.0-84944398809&partnerID=40
[2014]
54.[] Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm.[Applied Physics Letters,105,(2014)]H. Sato, H. Sato, E. C.I. Enobio, E. C.I. Enobio, M. Yamanouchi, M. Yamanouchi, S. Ikeda, S. Ikeda, S. Ikeda, S. Fukami, S. Fukami, S. Kanai, F. Matsukura, F. Matsukura, F. Matsukura, H. Ohno, H. Ohno, H. Ohno, H. Ohno
10.1063/1.4892924
http://www.scopus.com/inward/record.url?eid=84926368346&partnerID=40
55.[] Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis.[Journal of Applied Physics,115,(2014)]C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, H. Ohno
10.1063/1.4863260
http://www.scopus.com/inward/record.url?eid=85061502248&partnerID=40
56.[] Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs.[Jpn. J. Appl. Phys.,53(4 SPEC. ISSUE),(2014),04EM02-]Sato, H.a and Ikeda, S.a b and Fukami, S.a and Honjo, H.c and Ishikawa, S.b and Yamanouchi, M.a b and Mizunuma, K.b and Matsukura, F and Ohno, H.a b d
10.7567/JJAP.53.04EM02
http://www.scopus.com/inward/record.url?eid=2-s2.0-84903300442&partnerID=40
57.[] Process-induced damage and its recovery for a CoFeB-MgO magnetic tunnel junction with perpendicular magnetic easy axis.[Jpn. J. Appl. Phys.,53(10),(2014),103001-]Kinoshita, K.a e and Honjo, H.b c and Fukami, S.a and Sato, H.a and Mizunuma, K.c and Tokutome, K.b and Murahata, M.a and Ikeda, S.a c and Miura, S.b and Kasai, N.a and Ohno, H
10.7567/JJAP.53.103001
http://www.scopus.com/inward/record.url?eid=2-s2.0-84910026071&partnerID=40
58.[] Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions.[IEEE Trans Nucl Sci,61(4),(2014),6804706-]Kobayashi, D.a b and Kakehashi, Y.c and Hirose, K.a b and Onoda, S.d and Makino, T.d and Ohshima, T.d and Ikeda, S.e f and Yamanouchi, M.e f and Sato, H.f and Enobio, E.C.f and Endoh, T.g h and Ohno, H
10.1109/TNS.2014.2304738
http://www.scopus.com/inward/record.url?eid=2-s2.0-84906785233&partnerID=40
59.[] Advances in spintronics devices for microelectronics - From spin-transfer torque to spin-orbit torque.[Proc Asia South Pac Des Autom Conf,(2014),6742970-]Fukami, S.a and Sato, H.a and Yamanouchi, M.a b and Ikeda, S.a b c and Matsukura, F.a b d and Ohno, H
10.1109/ASPDAC.2014.6742970
http://www.scopus.com/inward/record.url?eid=2-s2.0-84897849368&partnerID=40
60.[] Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure.[J Appl Phys,115(17),(2014),17B742-]Suzuki, D.a b and Natsui, M.a b and Mochizuki, A.a and Miura, S.c and Honjo, H.c and Kinoshita, K.a and Fukami, S.a and Sato, H.a and Ikeda, S and Endoh, T.a d e and Ohno, H.a b d f and Hanyu, T.a b d
10.1063/1.4868332
http://www.scopus.com/inward/record.url?eid=2-s2.0-84903892358&partnerID=40
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