論文- 斉藤 好昭 -
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件数:160件
[2019]
1.Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W100-xTax/CoFeB systems.[Appl. Phys. Exp.,12,(2019),053008-1-053008-6]Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Hideo Sato, Tetsuo Endoh
10.7567/1882-0786/ab1a66
[2018]
2.Local Magnetoresistance at Room Temperature in Si<100> Devices.[IEEE Trans. Magn.,54(11),(2018),1400604-1-1400604-4]斉藤 好昭
10.1109/TMAG.2018.2849753
3.Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta-B Spin Hall Electrode.[Phys. Rev. Appl.,10,(2018),044011-1-044011-11]Y.Kato, Y. Saito, H. Yoda. T. inokuchi, S. Shirotori, N. Shimomura, S.Oikawa, A.Tiwari, M.Ishikawa, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, Y. Ohsawa and A. Kurobe
10.1103/PhysRevApplied.10.044011
4.Giant voltage-controlled magnetuc anisotropy effect in a crystallographically strained CoFe system.[Appl. Phys. Exp.,11,(2018),053007-1-053007-5]齋藤 好昭
10.7567/APEX.11.053007
5.Reliable Estimation of TaB Spin Hall Angle by Incorporating the Interfacial Transparency and Isolating Inverse Spin Hall Effect in ST-FMR Analysis.[IEEE International magnetic conference 2018 (Intermag 2018),ED-07,(2018)]A. Tiwari, H. Yoda, Y. Kato, K. Koi, M. Ishikawa, S. Oikawa, Y. Saito, T. Inokuchi, N. Shimomura, M. Shimizu, S. Shirotori, B. Altansargai, H. Sugiyama, Y. Ohsawa and A. Kurobe
[2017]
6.Giant voltage-control-magnetic-anisotropy (VCMA) effect in crystallographic strained CoFe system.[Proceedings of 62th annual Magnetism & Magnetic Materials Conference (MMM2017),(2017)]Y. Kato, Y. Saito, H. Yoda, N. Shimomura, S. Shirotori, S. Oikawa, M. Ishikawa, T. Inokuchi, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, Y. Ohsawa, K. Ikegami, Y. Kamiguchi, A. Tiwari, and A. Kurobe
7.Radical improvement of write efficiency in Voltage Control Spintronics Memory (VoCSM) by development of TaB Spin-Hall electrode.[62th annual Magnetism & Magnetic Materials Conference (MMM2017),(2017)]Y. Kato, Y. Saito, H. Yoda, N. Shimomura, S. Shirotori, S. Oikawa, M. Ishikawa, T. Inokuchi, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, Y. Ohsawa, K. Ikegami, Y. Kamiguchi, A. Tiwari, and A. Kurobe
8.Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency.[Proceedings of 2017 International conference on solid state devices and materials (SSDM 2017),(2017)]M. Shimizu, H. Yoda, S. Shirotori, N. Shimomura, Y. Ohsawa, T. Inokuchi, K. Koi, Y. Kato, S. Oikawa, H. Sugiyama, B. Altansargai, M. Ishikawa, K. Ikegami, Y. Kamiguchi, Y. Saito and A. Kurobe
9.Switching mechanism design for high-speed Voltage-Control Spintronics Memory (VoCSM) considering the operation window.[roceedings of 2017 International conference on solid state devices and materials (SSDM 2017),(2017)]K. Koi, H. Yoda, N. Shimomura, T. Inokuchi ,Y. Kato, A. Buyandalai, S. Shirotori, Y. Kamiguchi, K. Ikegami, S. Oikawa, H. Sugiyama, M. Shimizu, M. Ishikawa, T. Ajay, Y. Ohsawa, Y. Saito , and A. Kurobe
10.High-speed voltage-control spintronics memory focused on reduction in write-current.[Proceedings of Non-Volatile Memory Technology Symposium 2017 (NIVNST2017),(2017)]H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, Y. Kamiguchi, N. Shimomura, Y. Saito, and A. Kurobe
11.Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height.[Appl. Phys. Lett.,110,(2017),252404-1-252404-4]T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, A. Buyandalai, A. Tiwari, Y. Ohsawa, Y. Saito, and A. Kurobe
10.1063/1.4986923
12.Spin relaxation mechanism in heavily doped n-type silicon.[Spintech IX,(2017)]M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, and K. Hamaya
13.High-speed voltage-control spintronics memory (High-Speed VoCSM).[2017 IEEE 9th International Memory Workshop,7939085,(2017),1-4]H. Yoda, H. Sugiyama, T. Inokuchi, Y. Kato, Y. Ohsawa, K. Abe, N. Shimomura, Y. Saito, S. Shirotori, K. Koi, B. Altansargai, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami Y. Kamiguchi, S. Fujita, A. Kurobe
10.1109/IMW.2017.7939085
14.Voltage-Control Spintronics Memory (VoCSM) with a self-aligned heavy-metal electrode.[IEEE International magnetic conference 2017 (Intermag 2017),(2017)]S. Shirotori, H. Yoda, Y. Ohsawa, N. Shimomura, T. Inokuchi, Y. Kato, Y. Kamiguchi, K. Koi, K. Ikegami, H. Sugiyama, M. Shimizu, A. Buyandalai, S. Oikawa,M. Ishikawa, T. Ajay, Y. Saito, A. Kurobe
15.Magnetoresistance ratio through Si semiconductor using a magnetic tunnel junction.[IEEE International magnetic conference 2017 (Intermag 2017),(2017),CN-13-]N. Tezuka, S. Oikawa, M. Matsuura, S. Sugimoto and Y. Saito
16.Voltage-Control Spintronics Memory (VoCSM) with a self-aligned heavy-metal electrod.[IEEE Tran. Magn.,53,(2017),252404-1-252404-4]S. Shirotori, H. Yoda, Y. Ohsawa, N. Shimomura, T. Inokuchi, Y. Kato, Y. Kamiguchi, K. Koi, K. Ikegami, H. Sugiyama, M. Shimizu, B. Altansargai, S. Oikawa, M. Ishikawa, A. Tiwari, Y. Saito, and A. Kurobe
10.1109/TMAG.2017.2691764
17.Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer.[AIP Advances,7,(2017),055937-1-055937-6]Y. Saito, T. Inokuchi, M. Ishikawa, A. Tiwari, H. Sugiyama
10.1063/1.4978583
18.Spin relaxation through the lateral spin transport in heavily doped n-type silicon.[Phys. Rev.,B95,(2017),115302-1-115302-6]M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, and K. Hamaya
10.1103/PhysRevB.95.115302
19.Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si.[Jpn. J. Appl. Phys.,56,(2017),04CD05-1-04CD05-5]A. Tiwari, T. Inokuchi, M. Ishikawa, H. Sugiyama, N. Tezuka and Y. Saito
10.7567/JJAP.56.04CD05
[2016]
20.Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density.[2016 IEEE International Electron Devices Meeting,(2016),27.6.1-27.6.4]H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami and A. Kurobe
10.1109/IEDM.2016.7838495
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