著書論文等- 本庄 弘明 -
表示方法: 表示形式: 表示順:
[]:著書 []:論文 []:総説・解説記事
件数:177件
[2020]
1.[] Structural Analysis of CoFeB/MgO-based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography.[IEEE Transactions on Magnetics,(2020),1]M. Niwa, K. Kimura, T. Naijo, A. Oshurahunov, S. Nagamachi, H. Inoue, H. Honjo, S. Ikeda, T. Endoh
10.1109/tmag.2020.3008436
2.[] Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO Interface.[IEEE Trans. on Magnetics,(2020)]Honjo Hiroaki, Niwa Masaaki, Nguyen Thi Van Anh, Naganuma Hiroshi, Endo Yasushi, Yasuhira Mitsuo, Ikeda Shoji, Endoh Tetsuo
10.1109/TMAG.2020.3004576
3.[] Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance > 10^11.[VLSI Symposium,(2020)]S. Miura, K. Nishioka, H. Naganuma, T. V. A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, T. Endoh
4.[] Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage.[VLSI Symposium,(2020)]M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu
5.[] Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM.[VLSI Symposium,(2020)]Tetsuo Endoh, H. Honjo, K. Nishioka, S. Ikeda
6.[] Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction.[Journal of Vacuum Science & Technology B,38(3),(2020),033801-]M. Niwa, H. Honjo, H. Inoue, T. Endoh
10.1116/1.5144850
7.[] A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching.[Japanease Journal of Applied Physics,(2020)]Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Endoh
8.[] Novel Quad-Interface MTJ Technology and Its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm.[IEEE Transactions on electron device,(2020)]K. Nhishioka, H. Honjo et al.,
[2019]
9.[] First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400℃ thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology.[International Electron Device Meeting,(2019)]H. Honjo, T. V. A. Nguyen, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh
10.1109/IEDM19573.2019.8993443
10.[] Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers.[AIP Advances,9(12),(2019),125330-]HONJO Hiroaki
10.1063/1.5129794
11.[] Effect of surface modification treatment for buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions.[Journal of Applied Physics,126,(2019),113902-]H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, and T. Endoh
10.1063/1.5112017
12.[] Novel Quad Interface MTJ Technology and Its First Demonstration with High Thermal Stability and Switching Efficiency for STT-MRAM Beyond 2Xnm.[2019 Symposia on VLSI Technology and Circuits,(2019)]K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, T. Endoh
10.23919/VLSIT.2019.8776499
13.[] Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy.[Journal of Applied Physics,125(203903),(2019)]Masaaki Niwa, Akira Yasui, Eiji Ikenaga, Hiroaki Honjo, Shoji Ikeda, Tetsuya Nakamura, and Tetsuo Endoh
10.1063/1.5094067
14.[] A demonstration of high-performance STT-MRAM by development of unit process and integration process.[ICD研究会, (2019)]H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, S. Ikeda, S.- Y. Kang, T. Kubo, K. Yamashita, R. Tamura, T. Nishimura, K. Murata, and T. Endoh
15.[] 12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz.[Digest of Technical Papers - IEEE International Solid-State Circuits Conference,2019-February,(2019),202-204]Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
10.1109/ISSCC.2019.8662431
http://www.scopus.com/inward/record.url?eid=85063430967&partnerID=40
16.[] Critical role of sputtering condition for reference layer on magnetic and transport properties of perpendicular-anisotropy magnetic tunnel junction..[IEEE. Transaction on Magnetics,(2019)]H. Honjo, H. Sato, S. Ikeda, T. Endoh
10.1109/TMAG.2019.2897067
17.[] Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double CoFeB/MgO Interface Magnetic Tunnel Junctions.[IEEE. Transaction on Magnetics,(2019)]S.Miura, H.Sato, S.Ikeda, K. Nishioka , H.Honjo and T.Endoh
10.1109/TMAG.2019.2901841
18.[] A Fully Nonvolatile Microcontroller Unit with Embedded STT-MRAM and FPGA-Based Accelerator for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology.[IEEE Journal of Solid State Circuits,(2019)]M. Natsui, D. Suzuki, A. Tamakoshi, T. Watanabe, H. Honjo, H. Koike, T. Nasuno, Y. Ma, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu
10.1109/JSSC.2019.2930910
[2018]
19.[] 14ns write speed 128Mb density Embedded STT-MRAM with endurance>10^10 and 10yrs retention @85°C using novel low damage MTJ integration process.[International Electron Devise Meeting,(2018)]H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue1, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, S. Ikeda, S.- Y. Kang, T. Kubo, K. Yamashita, Y. Yagi, R. Tamura, and T. Endoh
10.1109/IEDM.2018.8614606
20.[] A Recent Progress of Spintronics Devices for Integrated Circuit Applications.[Journal of Low Power Electronics and Applications,8(4),(2018)]Tetsuo Endoh, Hiroaki Honjo
10.3390/jlpea8040044
Page: [1] [2] [3] [4] [5] [6] [7] [8] [9] [next]
戻るこのページのトップへ
copyright(c)2005 Tohoku University