論文- 藤原 宏平 -
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件数:47件
[2020]
1.Anomalous Hall effect at the spontaneously electron-doped polar surface of PdCoO2 ultrathin films.[Physical Review Research,2,(2020),013282-]T. Harada, K. Sugawara, K. Fujiwara, M. Kitamura, S. Ito, T. Nojima, K. Horiba, H.Kumigashira, T.Takahashi, T.Sato, A. Tsukazaki
10.1103/PhysRevResearch.2.013282
2.Electrical detection of the antiferromagnetic transition in MnTiO3 ultrathin films by spin Hall magnetoresistance.[Journal of Applied Physics,127,(2020),103903-]K. Miura, K. Fujiwara, J. Shiogai, T. Nojima, A.Tsukazaki
10.1063/1.5142193
3.Signature of band inversion in the perovskite thin-film alloys BaSn1−xPbxO3.[Physical Review B,101,(2020),125125-]J. Shiogai, T. Chida, K. Hashimoto, K. Fujiwara, T. Sasaki, A. Tsukazaki
10.1103/PhysRevB.101.125125
[2019]
4.Low-frequency noise measurements on Fe-Sn Hall sensors.[Applied Physics Express,12,(2019),123001-]J. Shiogai, Z. Jin, Y. Satake, K. Fujiwara, and A. Tsukazaki
10.7567/1882-0786/ab506a
5.Doping-induced enhancement of anomalous Hall coefficient in Fe-Sn nanocrystalline films for highly sensitive Hall sensors.[APL Materials,7,(2019),111103-]K. Fujiwara, Y. Satake, J. Shiogai, and A. Tsukazaki
10.1063/1.5126499
6.Ferromagnetic Co3Sn2S2 thin films fabricated by co-sputtering.[Japanese Journal of Applied Physics,58,(2019),050912-]K. Fujiwara, J. Ikeda, J. Shiogai, T. Seki, K. Takanashi, and A. Tsukazaki
10.7567/1347-4065/ab12ff
7.Growth control of corundum-derivative MnSnO3 thin films by pulsed-laser deposition.[AIP Advances,9,(2019),035210-]K. Miura, K. Fujiwara, and A. Tsukazaki
10.1063/1.5090407
8.Fe-Sn nanocrystalline films for flexible magnetic sensors with high thermal stability.[Scientific Reports,9,(2019),3282-]Y. Satake, K. Fujiwara, J. Shiogai, T. Seki, and A. Tsukazaki
10.1038/s41598-019-39817-8
9.Formation of distorted rutile-type NbO2, MoO2, and WO2 films by reactive sputtering.[Journal of Applied Physics,125,(2019),085301-]K. Fujiwara and A. Tsukazaki
10.1063/1.5079719
10.Thin-film stabilization of LiNbO <inf>3</inf> -type ZnSnO <inf>3</inf> and MgSnO <inf>3</inf> by molecular-beam epitaxy.[APL Materials,7(2),(2019),022505-]Kohei Fujiwara, Hiroya Minato, Junichi Shiogai, Akihito Kumamoto, Naoya Shibata, Atsushi Tsukazaki
10.1063/1.5054289
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11.Improving resistance change with temperature and thermal stability in Fe3O4 films for high-temperature resistors.[Applied Physics Express,12,(2019),011003-]K. Fujiwara, S. Tsubota, and H. Tanaka
10.7567/1882-0786/aaf285
[2018]
12.Pulsed-laser deposition of InSe thin films for the detection of thickness-dependent bandgap modification.[Applied Physics Letters,113,(2018),253501-]D. Zheng, J. Shiogai, K. Fujiwara, and A. Tsukazaki
10.1063/1.5064736
13.Effect of the depletion region in topological insulator heterostructures for ambipolar field-effect transistors.[PHYSICAL REVIEW B,98(12),(2018)]Satake Yosuke, Shiogai Junichi, Fujiwara Kohei, Tsukazaki Atsushi
10.1103/PhysRevB.98.125415
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000445173700004&DestApp=WOS
14.High-mobility field-effect transistor based on crystalline ZnSnO3 thin films.[AIP ADVANCES,8(5),(2018),055327-1-055327-6]Minato Hiroya, Fujiwara Kohei, Tsukazaki Atsushi
10.1063/1.5034403
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000433954000125&DestApp=WOS
15.Highly conductive PdCoO2 ultrathin films for transparent electrodes.[APL Materials,6,(2018),046107-1-046107-6]T. Harada, K. Fujiwara, and A. Tsukazaki
16.Enhancement of superconducting transition temperature in FeSe electric-double-layer transistor with multivalent ionic liquids.[PHYSICAL REVIEW MATERIALS,2(3),(2018)]Miyakawa Tomoki, Shiogai Junichi, Shimizu Sunao, Matsumoto Michio, Ito Yukihiro, Harada Takayuki, Fujiwara Kohei, Nojima Tsutomu, Itoh Yoshimitsu, Aida Takuzo, Iwasa Yoshihiro, Tsukazaki Atsushi
10.1103/PhysRevMaterials.2.031801
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000428244900002&DestApp=WOS
17.Fermi-level tuning of the Dirac surface state in (Bi1-xSbx)(2)Se-3 thin films.[JOURNAL OF PHYSICS-CONDENSED MATTER,30(8),(2018)]Satake Yosuke, Shiogai Junichi, Takane Daichi, Yamada Keiko, Fujiwara Kohei, Souma Seigo, Sato Takafumi, Takahashi Takashi, Tsukazaki Atsushi
10.1088/1361-648X/aaa724
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[2017]
18.Fabrication of tetragonal FeSe – FeS alloy films with high sulfur contents by alternate deposition.[Jpn. J. Appl. Phys.,56,(2017),100308-]K. Fujiwara, J. Shiogai, and A. Tsukazaki
10.7567/JJAP.56.100308.
19.Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures.[Appl. Phys. Lett.,110,(2017),203503-]K. Fujiwara, K. Nishihara, J. Shiogai, and A. Tsukazaki
10.1063/1.4983611
[2016]
20.High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface.[AIP Advances,6,(2016),085014-]K. Fujiwara, K. Nishihara, J. Shiogai, A. Tsukazaki
10.1063/1.4961637
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