論文- 吉田 慎哉 -
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件数:116件
[2017]
1.Development of Basic System of Ingestible Core Body Thermometer with Small Size and Low Energy Consumption Powered by Gastric Acid Battery.[The proceedings of IEEE Sensors 2017,(2017),1248-1250]Shinya Yoshida, Hiroshi Miyaguchi and Tsutomu Nakamura
2.Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer..[Japanese Journal of Applied Physics,56,(2017),071501]Takeshi Hayasaka, Shinya Yoshida and Shuji Tanaka
10.7567/JJAP.56.071501
3.MONOCRYSTALLINE PMNN-PZT THIN FILM ULTRASONIC RANGEFINDER WITH 2 METER RANGE AT 1 VOLT DRIVE.[The proceedings of Transducers 2017,(2017),167-170]Zhen Zhou, Shinya Yoshida, and Shuji Tanaka
4.スパッタ急冷法によってSi基板上に形成した大圧電特性・高キュリー温度PMN-PTエピタキシャル薄膜.[第34回強誘電体応用会議 講演予稿集,(2017),23-24]森村拓巳,吉田慎哉,長谷川幸弘,和佐清孝,田中秀治
5.エピタキシャルPMnN-PZT/Si トランスデューサを用いた高S/N 比pMUT レンジファインダー.[第64回応用物理学会春季学術講演会 講演予稿集,(2017),16p-411-6]吉田 慎哉,周 朕,田中 秀治
6.Epitaxial PMnN-PZT/Si MEMS Ultrasonic Rangefinder with 2 m Range at 1 V Drive.[Sensors & Actuators: A. Physical,266,(2017),352-360]Zhen Zhou, Shinya Yoshida and Shuji Tanaka
10.1016/j.sna.2017.09.058
7.Epitaxial growth of metallic buffer layer structure and c-axis oriented PMnN-PZT thin film on Si for high performance pMUT.[Japanese Journal of Applied Physics,56,(2017),127201]Pham Ngoc Thao, Shinya Yoshida and Shuji Tanaka
10.7567/JJAP.56.127201
[2016]
8.Enhanced Curie Temperature and High Heat Resistivity of PMnN-PZT Monocrystalline Thin Film on Si.[Sensors & Actuators: A. Physical,251,(2016),100-107]Shinya Yoshida, Hiroaki Hanzawa, Kiyotaka Wasa, Shuji Tanaka
10.1016/j.sna.2016.10.009
9.Sputtering Epitaxy of Highly c-Axis Oriented PMnN-PZT Thin Film on SrRuO3/Pt/Ir/YSZ/Si for Piezoelectric MEMS Sensors..[第33回 「センサ・マイクロマシンと応用システム」シンポジウム講演予稿集,33,(2016),24pm2-B-3]Pham Ngoc Thao,Shinya Yoshida,Shuji Tanaka
10.Development of a 17×17 Parallel Electron Beam Lithography System.[IEEJ Transactions on Sensors and Micromachines,136,(2016),413-419]Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Naokatsu Ikegami, Akira Kojima, Shuji Tanaka, Masayoshi Esashi
10.1541/ieejsmas.136.413
11.Si基板上c軸配向PMnN-PZTエピタキシャル急冷薄膜の面内ひずみの高温XRD解析.[第77回応用物理学会秋季学術講演会 講演予稿集,(2016),13a-A23-1-]吉田 慎哉,田中 秀治
12.Deposition Temperature Dependency of Characteristics of PMnN-PZT Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling.[第77回応用物理学会秋季学術講演会 講演予稿集,(2016),13a-A23-2-]Zhen Zhou、Shinya Yoshida、Shuji Tanaka
13.Feasibility Study of Ingestible Sensor Platform Powered by Gastric Acid Battery for Daily Health Care.[Proceedings of the 16th International Conference on Nanotechnology,(2016),724-727]S. Yoshida, H. Miyaguchi and T. Nakamura
14.Sputter Epitaxy of Large Figure-of-Merit PMnN-PZT thin film on Si for Ultrahigh-Performance Piezoelectric MEMS Sensor.[The abstracts of the 11th Korea-Japan Conference on Ferroelectrics,(2016),8]Shinya Yoshida
15.PZT/BiScO3-PTスパッタ薄膜の高温XRD特性.[圧電材料・デバイスシンポジウム2016 講演予稿集,(2016),67-70]和佐清孝,半澤弘明,吉田慎哉,柳谷隆彦,田中秀治
16.Fabrication and characterization of large figure-of-merit epitaxial PMnN-PZT/Si transducer for piezoelectric MEMS sensors.[Sensors and Actuators A: Physical,239,(2016),201-208]Shinya Yoshida, Hiroaki Hanzawa, Kiyotaka Wasa, Shuji Tanaka
10.1016/j.sna.2016.01.031
17.Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the massive parallel electron beam direct-write system.[The proceeding of SPIE Advanced Lithography, CONFERENCE 9777 Alternative Lithographic Technologies,(2016)]Akira Kojima, Naokatsu Ikegami, Takashi Yoshida, Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Kentaro Totsu, Nobuyoshi Koshida and Masayoshi Esashi
18.Structure and Ferroelectric Properties of High Tc BiScO3-PbTiO3 Epitaxial Thin Films.[IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control,Accepted,(2016)]Kiyotaka Wasa, Shinya Yoshida*, Hiroaki Hanzawa, Hideaki Adachi, Toshiyuki Matsunaga, and Shuji Tanaka
19.PZT系単結晶薄膜を用いた圧電MEMSのためのYSZエピタキシャルバッファ層のウエハレベルスパッタ成膜.[IEEJ Transactions on Sensors and Micromachines,136(10),(2016),437-442]Shinsuke Nishizawa, Shinya Yoshida, Kiyotaka Wasa, Shuji Tanaka
10.1541/ieejsmas.136.437
20.Fabrication of Through Silicon Via with Highly Phosphorus- Doped Polycrystalline Si Plugs for Driving an Active-matrix Nanocrystalline Si Electron Emitter Array.[Proceedings of the 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS),(2016),17-20]. Ikegami, T. Yoshida, A. Kojima, H. Miyaguchi, M. Muroyama, S. Yoshida, K. Totsu, N. Koshida, and M. Esashi
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