論文- 吹留 博一 -
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件数:173件
[2019]
1.Element- and Site-Specific Many-Body Interactions in Few-Layer MoS2 During X-Ray Absorption Processes.[PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,216(2),(2019)]Kamada Gen, Venugopal Gunasekaran, Kotsugi Masato, Ohkochi Takuo, Suemitsu Maki, Fukidome Hirokazu
10.1002/pssa.201800539
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000456684300003&DestApp=WOS
[2018]
2.Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy.[SCIENTIFIC REPORTS,8,(2018)]Omika Keiichi, Tateno Yasunori, Kouchi Tsuyoshi, Komatani Tsutomu, Yaegassi Seiji, Yui Keiichi, Nakata Ken, Nagamura Naoka, Kotsugi Masato, Horiba Koji, Oshima Masaharu, Suemitsu Maki, Fukidome Hirokazu
10.1038/s41598-018-31485-4
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000443745700050&DestApp=WOS
3.Enhancement of CO2 adsorption on oxygen-functionalized epitaxial graphene surface under near-ambient conditions.[PHYSICAL CHEMISTRY CHEMICAL PHYSICS,20(29),(2018),19532-19538]Yamamoto Susumu, Takeuchi Kaori, Hamamoto Yuji, Liu Ro-Ya, Shiozawa Yuichiro, Koitaya Takanori, Someya Takashi, Tashima Keiichiro, Fukidome Hirokazu, Mukai Kozo, Yoshimoto Shinya, Suemitsu Maki, Morikawa Yoshitada, Yoshinobu Jun, Matsuda Iwao
10.1039/c8cp03251c
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000448132600028&DestApp=WOS
[2017]
4.Simple formation of quasi-free-standing epitaxial graphene (QFSEG) using microwave annealing.[ISEG-2017,(2017)]Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Takashi Someya, Takushi Iimori, Fumio Komori, Iwao Matsuda, Maki Suemitsu
5.Quantification of Surface Electron Trapping of GaN Transistors by Using Operando Soft X-ray Photoelectron Nanospectroscopy.[ISSS-8 2017,(2017)]H. Fukidome, K. Omika, Y. Tateno, T. Kouchi, T. Komatani, N. Nagamura, S. Konno, Y. Takahashi, M. Kotsugi, K. Horiba, M. Suemitsu, M. Oshima
6.Temperature Dependence of the Conductivity in a Dual Gate Graphene Field Effect Transistor.[RJUSE 2017,(2017)]K. Sugawara, T. Watanabe, D. Yadav, T. Komiyama, Y. Fuse, M. Ryzhii, V. Ryzhii, H. Fukidome, M. Suemitsu, T. Otsuji
7.Atomic-scale characterization of the interfacial phonon in graphene/SiC.[PHYSICAL REVIEW B,96(15),(2017)]Minamitani Emi, Arafune Ryuichi, Frederiksen Thomas, Suzuki Tetsuya, Shahed Syed Mohammad Fakruddin, Kobayashi Tomohiro, Endo Norifumi, Fukidome Hirokazu, Watanabe Satoshi, Komeda Tadahiro
10.1103/PhysRevB.96.155431
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000412747300005&DestApp=WOS
8.Formation of Quasi-Free-standing Epitaxial Graphene on SiC(0001) by Microwave Annealing.[Carbon 2017,(2017)]Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Maki Suemitsu
9.Fabrication of multi-layer Bi2Se3 devices and observation of anomalous electrical transport behaviors.[Materials Science in Semiconductor Processing,68,(2017),128-132]Venugopal Gunasekaran, Goon-Ho Park, Maki Suemitsu, Hirokazu Fukidome
10.Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing.[Japanese Journal of Applied Physics,56,(2017),06GF09-1-06GF09-5]Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu
11.Adsorption of CO2 on Graphene: A Combined TPD, XPS, and vdW-DF Study.[The Journal of Physical Chemistry,121,(2017),2807-2814]Kaori Takeuchi, Susumu Yamamoto, Yuji Hamamoto, Yuichiro Shiozawa, Keiichiro Tashima, Hirokazu Fukidome, Takanori Koitaya, Kozo Mukai, Shinya Yoshimoto, Maki Suemitsu, Yoshitada Morikawa, Jun Yoshinobu, and Iwao Matsuda
12.Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates.[MRS ADVANCES,2(1),(2017),51-56]Mitsuhashi Fuminori, Okada Masaya, Tateno Yasunori, Nakabayashi Takashi, Ueno Masaki, Nagasawa Hiroyuki, Fukidome Hirokazu, Suemitsu Maki
10.1557/adv.2016.635
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000412703400009&DestApp=WOS
[2016]
13.Making and revealing stacking structure of high quality graphenegrown on SiC(000-1) substrate.[ICSPM23,(2016)]K. Tashima, R. Suto, H. Fukidome, M. Suemitsu, K. Horiba H. Kumigashira, M. Kotsugi, T. Ohkochi
14.Solution-Based Formation of High Quality Gate Dielectrics on Graphene Using Microwave-Assisted Annealing.[MNC 2016,(2016)]K.S. Kim, G.H. Park, H. Fukidome, T. Suemitsu, T. Otsuji and M. Suemitsu
15.Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion.[Applied Physics Letters,109,(2016),111604-1-111604-5]M. Hasegawa, K. Tashima, M. Kotsugi, T. Ohkochi, M. Suemitsu, and H. Fukidome
16.Operando X-ray spectromicroscopy on graphene transistors.[Global Graphene Forum,(2016)]Hirokazu Fukidome
17.Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors.[Japanese Journal of Applied Physics,55(9),(2016),091502-1-091502-5]Goon-Ho Park, Kwan-Soo Kim, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, and Maki Suemitsu
18.Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature.[NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2016,7(3),(2016),565-568]V. Gunasekaran, G.H. Park, K.S. Kim, M. Suemitsu, H. Fukidome
19.Observation of nanoscopic charge-transfer region at metal/MoS2 interface.[Materials Research Express,3,(2016)]Ryota Suto, Gunasekaran Venugopal, Keiichiro Tashima, Naoka Nagamura, Koji Horiba, Maki Suemitsu, Masaharu Oshima, Hirokazu Fukidome
20.Graphene on C-terminated face of 4H-SiC observed by noncontact scanning nonlinear dielectric potentiometry.[Japanese Journal of Applied Physics,55,(2016),08NB02-1-08NB02-5]Kohei Yamasue, Hirokazu Fukidome, Keiichiro Tashima, Maki Suemitsu, Yasuo Cho
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