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件数:199件
[2019]
1.[] Element- and Site-Specific Many-Body Interactions in Few-Layer MoS2 During X-Ray Absorption Processes.[PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,216(2),(2019)]Kamada Gen, Venugopal Gunasekaran, Kotsugi Masato, Ohkochi Takuo, Suemitsu Maki, Fukidome Hirokazu
10.1002/pssa.201800539
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000456684300003&DestApp=WOS
[2018]
2.[] Monoatomic Two-dimensional Layers, I. Matsuda ed..[(2018)]H. Fukidome(分担執筆・Chapt. 7: “Operando Soft X-Ray Spectromicroscopic Measurement and the Use for High-Performance Devices and Circuits,”)
3.[] Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy.[SCIENTIFIC REPORTS,8,(2018)]Omika Keiichi, Tateno Yasunori, Kouchi Tsuyoshi, Komatani Tsutomu, Yaegassi Seiji, Yui Keiichi, Nakata Ken, Nagamura Naoka, Kotsugi Masato, Horiba Koji, Oshima Masaharu, Suemitsu Maki, Fukidome Hirokazu
10.1038/s41598-018-31485-4
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000443745700050&DestApp=WOS
4.[] Enhancement of CO2 adsorption on oxygen-functionalized epitaxial graphene surface under near-ambient conditions.[PHYSICAL CHEMISTRY CHEMICAL PHYSICS,20(29),(2018),19532-19538]Yamamoto Susumu, Takeuchi Kaori, Hamamoto Yuji, Liu Ro-Ya, Shiozawa Yuichiro, Koitaya Takanori, Someya Takashi, Tashima Keiichiro, Fukidome Hirokazu, Mukai Kozo, Yoshimoto Shinya, Suemitsu Maki, Morikawa Yoshitada, Yoshinobu Jun, Matsuda Iwao
10.1039/c8cp03251c
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000448132600028&DestApp=WOS
[2017]
5.[] デュアルゲートグラフェンFETの相互コンダクタンスの温度依存性 (電子デバイス).[電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,117(364), (2017), 73-76]菅原 健太, 渡辺 隆之, ヤダフ ディピカ, 込山 貴大, 布施 吉貴, リジー マキシム, リジー ヴィクトール, 吹留 博一, 末光 眞希, 尾辻 泰一
6.[] Simple formation of quasi-free-standing epitaxial graphene (QFSEG) using microwave annealing.[ISEG-2017,(2017)]Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Takashi Someya, Takushi Iimori, Fumio Komori, Iwao Matsuda, Maki Suemitsu
7.[] Quantification of Surface Electron Trapping of GaN Transistors by Using Operando Soft X-ray Photoelectron Nanospectroscopy.[ISSS-8 2017,(2017)]H. Fukidome, K. Omika, Y. Tateno, T. Kouchi, T. Komatani, N. Nagamura, S. Konno, Y. Takahashi, M. Kotsugi, K. Horiba, M. Suemitsu, M. Oshima
8.[] Temperature Dependence of the Conductivity in a Dual Gate Graphene Field Effect Transistor.[RJUSE 2017,(2017)]K. Sugawara, T. Watanabe, D. Yadav, T. Komiyama, Y. Fuse, M. Ryzhii, V. Ryzhii, H. Fukidome, M. Suemitsu, T. Otsuji
9.[] Atomic-scale characterization of the interfacial phonon in graphene/SiC.[PHYSICAL REVIEW B,96(15),(2017)]Minamitani Emi, Arafune Ryuichi, Frederiksen Thomas, Suzuki Tetsuya, Shahed Syed Mohammad Fakruddin, Kobayashi Tomohiro, Endo Norifumi, Fukidome Hirokazu, Watanabe Satoshi, Komeda Tadahiro
10.1103/PhysRevB.96.155431
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000412747300005&DestApp=WOS
10.[] Formation of Quasi-Free-standing Epitaxial Graphene on SiC(0001) by Microwave Annealing.[Carbon 2017,(2017)]Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Maki Suemitsu
11.[] Fabrication of multi-layer Bi2Se3 devices and observation of anomalous electrical transport behaviors.[Materials Science in Semiconductor Processing,68,(2017),128-132]Venugopal Gunasekaran, Goon-Ho Park, Maki Suemitsu, Hirokazu Fukidome
12.[] Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing.[Japanese Journal of Applied Physics,56,(2017),06GF09-1-06GF09-5]Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu
13.[] Adsorption of CO2 on Graphene: A Combined TPD, XPS, and vdW-DF Study.[The Journal of Physical Chemistry,121,(2017),2807-2814]Kaori Takeuchi, Susumu Yamamoto, Yuji Hamamoto, Yuichiro Shiozawa, Keiichiro Tashima, Hirokazu Fukidome, Takanori Koitaya, Kozo Mukai, Shinya Yoshimoto, Maki Suemitsu, Yoshitada Morikawa, Jun Yoshinobu, and Iwao Matsuda
14.[] Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates.[MRS ADVANCES,2(1),(2017),51-56]Mitsuhashi Fuminori, Okada Masaya, Tateno Yasunori, Nakabayashi Takashi, Ueno Masaki, Nagasawa Hiroyuki, Fukidome Hirokazu, Suemitsu Maki
10.1557/adv.2016.635
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000412703400009&DestApp=WOS
[2016]
15.[] Making and revealing stacking structure of high quality graphenegrown on SiC(000-1) substrate.[ICSPM23,(2016)]K. Tashima, R. Suto, H. Fukidome, M. Suemitsu, K. Horiba H. Kumigashira, M. Kotsugi, T. Ohkochi
16.[] Solution-Based Formation of High Quality Gate Dielectrics on Graphene Using Microwave-Assisted Annealing.[MNC 2016,(2016)]K.S. Kim, G.H. Park, H. Fukidome, T. Suemitsu, T. Otsuji and M. Suemitsu
17.[] Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion.[Applied Physics Letters,109,(2016),111604-1-111604-5]M. Hasegawa, K. Tashima, M. Kotsugi, T. Ohkochi, M. Suemitsu, and H. Fukidome
18.[] Operando X-ray spectromicroscopy on graphene transistors.[Global Graphene Forum,(2016)]Hirokazu Fukidome
19.[] Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors.[Japanese Journal of Applied Physics,55(9),(2016),091502-1-091502-5]Goon-Ho Park, Kwan-Soo Kim, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, and Maki Suemitsu
20.[] Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature.[NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS, 2016,7(3),(2016),565-568]V. Gunasekaran, G.H. Park, K.S. Kim, M. Suemitsu, H. Fukidome
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