Original Papers- GOTO Takashi -
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[2017]
81.Effect of Li addition on the formation of Na-β/βʹʹ-alumina film by laser chemical vapor deposition.[Ceramics International,43(Part B),(2017),1278-1283]Chen Chi, Hirokazu Katsui, Takashi Goto
82.Preparation of directionally solidified BaTi2O5–Ba6Ti17O40 eutectic by the floating zone method.[Journal of Crystal Growth,459,(2017),23-30]K. Shiga, H. Katsui, T. Goto
83.Preparation of highly oriented β-SiC bulks by halide laser chemicalvapor deposition.[Journal of the European Ceramic Society,37,(2017),509-515]Hong Cheng, Rong Tu, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang
84.Morphological features of W- and Ni-containing coatings on diamond crystals and properties of diamond-copper composites obtained by Spark Plasma Sintering.[Materials Today: Proceedings,4(11),(2017),11396-11401]A. Ukhina, B. Bokhonov, D. Samoshkin, S. Stankus, D. Dudina, E. Galashov, H. Katsui, T. Goto, H. Kato
10.1016/j.matpr.2017.09.016
85.Preface.[Materials Today: Proceedings,4(11),(2017),11325-11326]Rodion V. Belosludov, Alexander S. Zolkin, Takashi Goto
10.1016/j.matpr.2017.09.001
86.Dielectric properties of single crystalline Ba(Ti0.99Zr0.01)2O5 prepared by the floating zone method.[Materials Today: Proceedings,4(11),(2017),11457-11460]Keiji Shiga, Hirokazu Katsui, Takashi Goto
10.1016/j.matpr.2017.09.028
87.Microstructure evolution of (Ti, Zr)C solid solution at the initial stage of phase decomposition.[Materials Today: Proceedings,4(11),(2017),11449-11452]Ying Li, Hirokazu Katsui, Takashi Goto
10.1016/j.matpr.2017.09.026
88.Spark plasma sintering of SiC-coated large-size diamond powder.[Materials Today: Proceedings,4(11),(2017),11453-11456]Mettaya Kitiwan, Hirokazu Katsui, Takashi Goto
10.1016/j.matpr.2017.09.027
89.High-speed Epitaxial Growth of (110) SrTiO3 Films on (110) MgAl2O4 Substrates using Laser Chemical Vapour Deposition.[Materials Today: Proceedings,4(11),(2017),11461-11464]Jianchao Chen, Akihiko Ito, Takashi Goto
10.1016/j.matpr.2017.09.029
90.Impedance of Cubic Li7La3Zr2O12 Film Deposited on Strontium Ruthenate Substrate by Chemical Vapor Deposition.[Materials Today: Proceedings,4(11),(2017),11445-11448]Hirokazu Katsui and Takashi Goto
10.1016/j.matpr.2017.09.025
91.Mintermediate accumulation analysis of bacteriorhodopsin reconstituted.[Jounal of physics,924(1),(2017)]Yutaka Tsujiuchi, Hiroshi Masumoto, Takashi Goto
10.1088/1742-6596/924/1/012016
92.回転CVD法によるNi系ナノ粒子の合成.[粉体および粉末冶金,64(12),(2017),677-680]中倉 修平, 且井 宏和, 後藤 孝
[2016]
93.High-speed deposition of oriented orthorhombic NaTaO3 films using laser chemical vapor deposition.[Material Letters,184,(2016),257-260]Ali M. Huerta-Floresa,Jianchao Chenb, Akihiko Ito,Leticia M. Torres-Martínez, Edgar Moctezuma, Takashi Goto
94.Bio-ceramic Coating of Ca-Ti-O System Compound by Laser Chemical Vapor Deposition.[Interface Oral Health Science 2016,(2016),47-62]Hirokazu Katsui,Takashi Goto
10.1007/978-981-10-1560-1
95.Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition.[Journal of the Korean Ceramic Society,53(6),(2016),647-651]Ying Li, Hirokazu Katsui, Takashi Goto
10.4191/kcers.2016.53.6.647
96.Preparation of SiOC nanocomposite films by laser chemical vapor deposition.[Journal of the European Ceramic Society,36(3),(2016),403-409]Shu Yu, Rong Tu, Takashi Goto
97.Electrical resistivity anomaly in (Pr1−yMy)1−xCaxCoO3 epitaxial films (M=Y, Gd) fabricated by pulsed laser deposition.[AIP ADVANCES,6(025318),(2016)]Y. Noda, H. Fujishiro, T. Naito, A. Ito, T. Goto, J. Hejtmanek and Z. Jirak
10.1063/1.4942558
98.Synthesis of sodium beta alumina films by heat treatment of sodium aluminum oxides.[Journal of Wuhan University of Technology-Mater. Sci. Ed.,31(1),(2016),6-10]Chi Chen, Hirokazu Katsui, Takashi Goto
99.Luminescence and scintillation properties of Lu3Al5O12 nanoceramics sintered by SPS method.[Optical Materials,53,(2016),54-63]J. Pejchal, V. Babin, A. Beitlerova, R. Kucerkova, D. Panek, J. Barta, V. Cuba, A. Yamaji, S. Kurosawa, E. Mihokova, A. Ito, T. Goto, M. Nikl, A. Yoshikawa
10.1016/j.optmat.2016.01.024
100.Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature.[Ceramics International,42(3),(2016),4632-4635]Song Zhang, Qingfang Xu, Zhiying Hu, Peipei Zhu, Rong Tu , Lianmeng Zhang, Mingxu Han, Takashi Goto, Jiasheng Yan, Sijun Luo
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