Original Papers- GOTO Takashi -
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741.As-grown superconducting Bi(-Pb)-Sr-Ca-Cu-O films by electron cyclotron resonance plasma sputtering.[Applied Physics Letters,55(5),(1989),498-500]H. Masumoto, T. Goto, T. Hirai
742.Dielectric properties of chemically vapour-deposited Si3N4.[Journal of Materials Science,24(3),(1989),821-826]T. Goto, T. Hirai
743.Preparation of superconducting YBa2Cu3O7-x films by ECR plasma sputtering.[Japanese Journal of Applied Physics,28(1),(1989),L88-L90]T. Goto, H. Masumoto, T. Hirai
744.Active to passive transition in the oxidation of CVD-SiC.[Proc. MRS Int'l. Mtg. on Adv. Mats., 1989,4,(1989),295-300]H. Narushima, T. Goto, T. Hirai
745.ESCA study of amorphous CVD Si3N4-BN composites.[Journal of Materials Science Letters,7(5),(1988),548-550]T. Goto, T. Hirai
746.Atomic-Scale Structure of CVD Amorphous Si3N4-BN Composite.[Journal of Non-Crystalline Solids,95&96(Part 2),(1987),1119-1126]T. Fukunaga, T. Goto, M. Misawa, T. Hirai, K. Suzuki
747.CHEMICALLY VAPOR DEPOSITED Ti3SiC2.[Materials Research Bulletin,22(9),(1987),1195-1201]T. Goto, T. Hirai
748.Microstructures of SiC-TiC in-situ composites prepared by chemical vapor deposition.[J. Jpn. Soc. Powd. and Powd. Metall.,34(9),(1987),487-490]T. Goto, T. Hirai
749.High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition.[Journal of Materials Science,22(8),(1987),2842-2846]T. Goto, T. Hirai
750.Thermodynamics for the chemical vapor deposition of SiCl4-TiCl4-CCl4-H2 system.[Journal of Chemical Society Japan,1987(11),(1987),1939-1945]T. Goto, T. Hirai
751.Preparation of silicon carbide powders by chemical vapor deposition.[Proc. '87 Inter. Symp. Exhib. Sci. Tech. Sintering, Ed. by S. Somiya, M. Shimada, M. Yoshimura and R. Watanabe, Tokyo, 1987,1,(1987),49-54]L. Chen, T. Goto and T. Hirai
752.Preparation of SiC-TiC in-situ composites by chemical vapor deposition.[Proc. 10th Inter. Conf. on Chemical Vapor Deposition, Ed. by G. W. Cullen, New Jersey, 1987,(1987),1070-1079]T. Goto, T. Hirai
753.CVD-ceramic composites.[Proc. New Materials Japan, Osaka, 1986,(1986),231-243]T. Hirai, T. Goto
754.Atomic arrangement of CVD amorphous (Si3N4) -B.[KENS Rep. IV,(1986),167-170]T. Fukunaga, T. Goto, M. Misawa, T. Hirai, K. Suzuki
755.Preparation of amorphous Si3N4-BN composites by chemical vapor deposition.[Mater. Sci. Res., "Emergent Process Methods for High-Technology Ceramics",17,(1984),347-358]T. Hirai, T. Goto and T. Sakai
756.ESCA study of amorphous CVD Si3N4-C composites.[Journal of Materials Science Letters,2(12),(1983),805-807]T. GOTO, F. ITOH, K. SUSUZKI, T. HIRAI
757.Preparation of silicon carbide by chemical vapor deposition.[Yogyo-Kyokai-Shi,91(11),(1983),502-509]T. Hirai, T. Goto, T. Kaji
758.Etching of Chemically Vapour-Deposited Amorphous Si3N4-C Composites in HF Solution.[Journal of Materials Science,18(11),(1983),3387-3392]TAKASHI GOTO, TOSHIO HIRAI
759.D. C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition.[Journal of Materials Science,18(2),(1983),383-390]TAKASHI GOTO, TOSHIO HIRAI
760.Density and deposition rates of amorphous CVD-Si3N4 including carbon.[Journal of Materials Science,16(10),(1981),2877-2882]TOSHIO HIRAI, TAKASHI GOTO
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