Original Papers- GOTO Takashi -
number of results to view: what to display: sort:
total:763
[1987]
741.High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition.[Journal of Materials Science,22(8),(1987),2842-2846]T. Goto, T. Hirai
10.1007/BF01086480
742.Thermodynamics for the chemical vapor deposition of SiCl4-TiCl4-CCl4-H2 system.[Journal of Chemical Society Japan,1987(11),(1987),1939-1945]T. Goto, T. Hirai
10.1246/nikkashi.1987.1939
743.Preparation of silicon carbide powders by chemical vapor deposition.[Proc. '87 Inter. Symp. Exhib. Sci. Tech. Sintering, Ed. by S. Somiya, M. Shimada, M. Yoshimura and R. Watanabe, Tokyo, 1987,1,(1987),49-54]L. Chen, T. Goto and T. Hirai
744.Preparation of SiC-TiC in-situ composites by chemical vapor deposition.[Proc. 10th Inter. Conf. on Chemical Vapor Deposition, Ed. by G. W. Cullen, New Jersey, 1987,(1987),1070-1079]T. Goto, T. Hirai
[1986]
745.CVD-ceramic composites.[Proc. New Materials Japan, Osaka, 1986,(1986),231-243]T. Hirai, T. Goto
746.Atomic arrangement of CVD amorphous (Si3N4) -B.[KENS Rep. IV,(1986),167-170]T. Fukunaga, T. Goto, M. Misawa, T. Hirai, K. Suzuki
[1984]
747.Preparation of amorphous Si3N4-BN composites by chemical vapor deposition.[Mater. Sci. Res., "Emergent Process Methods for High-Technology Ceramics",17,(1984),347-358]T. Hirai, T. Goto and T. Sakai
[1983]
748.ESCA study of amorphous CVD Si3N4-C composites.[Journal of Materials Science Letters,2(12),(1983),805-807]T. GOTO, F. ITOH, K. SUSUZKI, T. HIRAI
10.1007/BF00720564
749.Preparation of silicon carbide by chemical vapor deposition.[Yogyo-Kyokai-Shi,91(11),(1983),502-509]T. Hirai, T. Goto, T. Kaji
10.2109/jcersj1950.91.1059_502
750.Etching of Chemically Vapour-Deposited Amorphous Si3N4-C Composites in HF Solution.[Journal of Materials Science,18(11),(1983),3387-3392]TAKASHI GOTO, TOSHIO HIRAI
10.1007/BF00544164
751.D. C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition.[Journal of Materials Science,18(2),(1983),383-390]TAKASHI GOTO, TOSHIO HIRAI
10.1007/BF00560626
[1981]
752.Density and deposition rates of amorphous CVD-Si3N4 including carbon.[Journal of Materials Science,16(10),(1981),2877-2882]TOSHIO HIRAI, TAKASHI GOTO
10.1007/BF00552973
753.Preparation of amorphous Si3N4-C plate by chemical vapour deposition.[Journal of Materials Science,16(1),(1981),17-23]TOSHIO HIRAI, TAKASHI GOTO
10.1007/BF00552054
754.POSITRON ANNIHILATION STUDY OF AMORPHOUS CVD Si3N4-C COMPOSITES.[Proceedings of the Eigth International Conference on Chemical Vapor Deposition 1981,(1981),227-224]Fumitake Itoh, Toshihisa Honda, Takashi Goto, Toshio Hirai, Kenji Suzuki
[1980]
755.Oxidation of CVD Si3N4 at 1550℃ to 1650℃.[Journal of The American Ceramic Society,63(7-8),(1980),419-424]TOSHIO HIRAI, KOICHI NIIHARA, TAKASHI GOTO
10.1111/j.1151-2916.1980.tb10204.x
756.The D. C. electrical conductivity of chemically vapor deposited Si3N4.[Yogyo-Kyokai-Shi,88(7),(1980),401-404]T. Hirai, M. Shimada, T. Goto
10.2109/jcersj1950.88.1019_401
757.High temperature X-ray diffraction equipment for investigating high temperature behavior of materials.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),81-83]T. Hirai, K. Niihara, T. Goto
758.Thermal Properties of Amorphous Si3N4-C Composites Prepared by Chemical Vapor Deposition.[Science Reports of the Research Institutes Tohoku University Series A-Physics Chemistry and Metallurgy,29(2),(1980),176-183]Takashi Goto, Shinsuke Hayashi, Toshio Hirai
759.Crystallization of amorphous CVD-Si3N4.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),112-115]T. Hirai, K. Niihara, T. Goto
760.High temperature reaction rate measuring equipment for investigating high temperature behavior of materials.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),209-215]T. Hirai, K. Niihara, T. Goto
Page: [prev] [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [next]
BackTop
copyright(c)2005 Tohoku University