Original Papers- GOTO Takashi -
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721.Preferred orientation of TiB2 plates prepared by CVD of the TiCl4+B2H6 system.[Journal of Materials Science,26(24),(1991),6613-6617]M. Mukaida, T. Goto, T. Hirai
722.High temperature active oxidation of chemically vapor-deposited silicon carbide in an Ar-O2 atmosphere.[Journal of the American Ceramic Society,74(10),(1991),2583-2586]Takayuki Narushima, Takashi Goto, Yasutaka Iguchi and Toshio Hirai
723.Preparation of Bi4Ti3O12 films on a single-crystal sapphire substrate with electron cyclotron resonance plasma sputtering.[Applied Physics Letters,58(3),(1991),243-245]H. Masumoto, T. Goto, Y. Masuda, A. Baba and T. Hirai
724.A.C. impedance and transport number measurements of Ba6Ta2O11.[Materials Research Society Symposium,210,(1991),669-674]T. Goto, A. R. West
725.Bi4Ti3O12 films by ECR plasma spattering depositions.[八戸工業大学紀要,10,(1991),11-17]増田 陽一郎,馬場 明,増本 博,後藤 孝,平井 敏雄
726.Preparation of Bi4Ti3O12 films by ECR plasma sputtering.[Mater. Res. Soc. Symp. Proc., Ed. by J. M. E. Harper, K. Miyake, J. R. McNeil and,223,(1991),283-288]H. Masumoto, T. Goto, Y. Masuda, A. Baba, T. Hirai
727.Nano-structure control by heat treatment of Si3N4 -BN system amorphous ceramic nano composite thick films.[マツダ財団研究報告,2,(1991),117-125]T. Hirai, T. Goto
728.Preparation and Dielectric and Electrooptic Properties of Bi[4]Ti[3]O[12] Films by Electron Cyclotron Resonance Plasma Sputtering Deposition.[Japanese Journal of Applied Physics,30,(1991),2212-2215]Masuda Y., Baba A., Masumoto H., Goto T., Minakata M., Hirai T.
729.High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen at 1823 to 1923 K.[Journal of the American Ceramic Society,73(12),(1990),3580-3584]T. Narushima, T. Goto, Y. Iguchi, T. Hirai
730.Thermodynamics for the preparation of SiC-C nano-composites by chemical vapor deposition.[Journal of Materials Science,25(11),(1990),4607-4613]Y. Wang, M. Sasaki, T. Goto, T. Hirai
731.Preparation of silicon carbide powders by chemical vapor deposition of (CH3)2SiCl2-H2 system.[Journal of Materials Science,25(11),(1990),4614-4621]L. Chen, T. Goto, T. Hirai
732.Infrared absorption of β-SiC particles prepared by chemical vapour deposition.[Journal of Materials Science,25(10),(1990),4273-4278]L. Chen, T. Goto, T. Hirai
733.Microhardness of non-stoichiometric TiCx plates prepared by chemical vapour deposition.[Journal of the Less-Common Metals,163(2),(1990),339-346]C. C. Jiang, T. Goto, T. Hirai
734.State of boron in chemical vapour-deposited SiC-B composite powders.[Journal of Materials Science Letters,9(9),(1990),997-999]L. Chen, T. Goto, T. Hirai, T. Amano
735.Thermodynamic analysis for the chemical vapour deposition of non-stoichiometric titanium carbides.[Journal of the Less-Common Metals,159,(1990),231-236]T. Goto, C. C. Jiang, T. Hirai
736.Chemical vapor deposition of silicon borides.[Proc. Mater. Res. Soc. Symp., "Chemical Vapor Deposition", Ed. by T. M. Besmann and B. M. Gallois, Boston, 1989,168,(1990),167-172]T. Goto, M. Mukaida, T. Hirai
737.Preparation of titanium carbide plates by chemical vapour deposition.[Journal of Materials Science,25,(1990),1086-1093]C. C. Jiang, T. Goto, T. Hirai
738.Morphology and Deposition Rates of TiB[2] Prepared by Chemical Vapour Deposition of TiCl[4] + B[2]H[6] System.[Journal of Materials Science,25,(1990),1069-1075]Mukaida M., Goto T., Hirai T.
739.Preparation of silicon carbide powders by chemical vapour deposition of the SiH4-CH4-H2 system.[Journal of Materials Science,24(11),(1989),3824-3830]L. Chen, T. Goto, T. Hirai
740.High-temperature passive oxidation of chemically vapor deposited silicon carbide.[Journal of the American Ceramic Society,72(8),(1989),1386-1390]T. Narushima, T. Goto, T. Hirai
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