Original Papers- GOTO Takashi -
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721.High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen at 1823 to 1923 K.[Journal of the American Ceramic Society,73(12),(1990),3580-3584]T. Narushima, T. Goto, Y. Iguchi, T. Hirai
722.Thermodynamics for the preparation of SiC-C nano-composites by chemical vapor deposition.[Journal of Materials Science,25(11),(1990),4607-4613]Y. Wang, M. Sasaki, T. Goto, T. Hirai
723.Preparation of silicon carbide powders by chemical vapor deposition of (CH3)2SiCl2-H2 system.[Journal of Materials Science,25(11),(1990),4614-4621]L. Chen, T. Goto, T. Hirai
724.Infrared absorption of β-SiC particles prepared by chemical vapour deposition.[Journal of Materials Science,25(10),(1990),4273-4278]L. Chen, T. Goto, T. Hirai
725.Microhardness of non-stoichiometric TiCx plates prepared by chemical vapour deposition.[Journal of the Less-Common Metals,163(2),(1990),339-346]C. C. Jiang, T. Goto, T. Hirai
726.State of boron in chemical vapour-deposited SiC-B composite powders.[Journal of Materials Science Letters,9(9),(1990),997-999]L. Chen, T. Goto, T. Hirai, T. Amano
727.Thermodynamic analysis for the chemical vapour deposition of non-stoichiometric titanium carbides.[Journal of the Less-Common Metals,159,(1990),231-236]T. Goto, C. C. Jiang, T. Hirai
728.Chemical vapor deposition of silicon borides.[Proc. Mater. Res. Soc. Symp., "Chemical Vapor Deposition", Ed. by T. M. Besmann and B. M. Gallois, Boston, 1989,168,(1990),167-172]T. Goto, M. Mukaida, T. Hirai
729.Morphology and Deposition Rates of TiB[2] Prepared by Chemical Vapour Deposition of TiCl[4] + B[2]H[6] System.[Journal of Materials Science,25,(1990),1069-1075]Mukaida M., Goto T., Hirai T.
730.Preparation of titanium carbide plates by chemical vapour deposition.[Journal of Materials Science,25,(1990),1086-1093]C. C. Jiang, T. Goto, T. Hirai
731.Preparation of silicon carbide powders by chemical vapour deposition of the SiH4-CH4-H2 system.[Journal of Materials Science,24(11),(1989),3824-3830]L. Chen, T. Goto, T. Hirai
732.High-temperature passive oxidation of chemically vapor deposited silicon carbide.[Journal of the American Ceramic Society,72(8),(1989),1386-1390]T. Narushima, T. Goto, T. Hirai
733.As-grown superconducting Bi(-Pb)-Sr-Ca-Cu-O films by electron cyclotron resonance plasma sputtering.[Applied Physics Letters,55(5),(1989),498-500]H. Masumoto, T. Goto, T. Hirai
734.Dielectric properties of chemically vapour-deposited Si3N4.[Journal of Materials Science,24(3),(1989),821-826]T. Goto, T. Hirai
735.Preparation of superconducting YBa2Cu3O7-x films by ECR plasma sputtering.[Japanese Journal of Applied Physics,28(1),(1989),L88-L90]T. Goto, H. Masumoto, T. Hirai
736.Active to passive transition in the oxidation of CVD-SiC.[Proc. MRS Int'l. Mtg. on Adv. Mats., 1989,4,(1989),295-300]H. Narushima, T. Goto, T. Hirai
737.ESCA study of amorphous CVD Si3N4-BN composites.[Journal of Materials Science Letters,7(5),(1988),548-550]T. Goto, T. Hirai
738.Atomic-Scale Structure of CVD Amorphous Si3N4-BN Composite.[Journal of Non-Crystalline Solids,95&96(Part 2),(1987),1119-1126]T. Fukunaga, T. Goto, M. Misawa, T. Hirai, K. Suzuki
739.CHEMICALLY VAPOR DEPOSITED Ti3SiC2.[Materials Research Bulletin,22(9),(1987),1195-1201]T. Goto, T. Hirai
740.Microstructures of SiC-TiC in-situ composites prepared by chemical vapor deposition.[J. Jpn. Soc. Powd. and Powd. Metall.,34(9),(1987),487-490]T. Goto, T. Hirai
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