Original Papers- GOTO Takashi -
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[1996]
661.Microstructure and Thermoelectric Properties of W-B-C Composite Ceramics Prepared by Arc Melting(in Japanese).[1995 Functionally Graded Materials, FGM'95,(1996),149-154]T. Goto, J. Li, T. Hirai
662.In Situ Observation of Oxide Films Formed during Thermal Oxidation of SiC-B<4>C Composite Using Raman Spectroscopy.[Key Eng. Mater.,113,(1996),99-104]T. Narushima, M. Maruyama, H. Arashi, T. Goto, T. Hirai, Y. Iguchi
663.Synthesis and Thermoelectric Properties of Boron-rich Silicon Borides.[Mater. Trans. JIM,37(5),(1996),1182-1185]L. Chen, T. Goto, J. Li, T. Hirai
http://ir.library.tohoku.ac.jp/re/handle/10097/52151
664.Densification and Termal Properties of TiC-Ni3Al Composites Materials.[粉体および粉末冶金,43(3),(1996),278-282]張 聯盟,大森 守,李 剣輝,後藤 孝,平井 敏雄
665.Preparation of B-C System Solid Solutions by Arc Melting and Their Thermoelectric Properties.[J. Jpn. Soc. Powd. and Powd. Metallurgy,43(3),(1996),306-310]T. Goto, J. Li, T. Hirai
666.Preparation of B-C-Si System Composites by Arc Melting and their Thermoelectric Properties.[J. Jpn. Soc. Powd. and Powd. Metallurgy,43(3),(1996),311-315]T. Goto, E. Ito, M. Mukaida, T. Hirai
667.Dielectric Relaxation Phenomenon of Rare Earth Nd>3+< Modified Bismuth Layer Ferroelectric Ceramics Fabricated by Plasma Active Sintering Method.[Integr. Ferroelectr.,13,(1996),327-337]Y. Masuda, A. Baba, M. Omori, H. Masumoto, T. Goto, T. Hirai, K. Sakata
668.High-temperature Oxidation Behavior of CVD Silicon-based Ceramics.[Ind. Sci. Technol. Front. Program : Proc. 7th Symp. High-Performance Materials for Severe Enviroments,(1996),341-349]T. Goto, T. Hirai
669.Measurements of seebeck coefficient and relating issues.[New Ceramics,9(11),(1996),45-50]T. Goto
670.Preparation of Iridium Films by MOCVD and Their Application for Oxygen Gas Sensor.[Proc. 3rd M. V. Mokhosoev Memorial Inter. Seminar on New Materials, Irkutsk, Russia, 1996,(1996),76]T. Goto, T. Ono, T. Hirai
671.Effect of Phase Composition and Microstructure to Thermoelectric Property of Silicon Borides(in Japanese).[電気学会論文誌A,116-A,(1996),248-252]L. Chen, T. Goto, J. Li, M. Niino, T. Hirai
672.Preparation and Pressureless Sintering of Chemical Vapour Deposited SiC-B Composite Powder.[Journal of Materials Science,31,(1996),679-683]Chen Lidong, Goto Takashi, Hirai Toshio
673.Preparation of Iridium Clusters by MOCVD and Their Electrochemical Properties.[Materials Science and Engineering A - Structural Materials Properties Microstructure and Processing,A217/218,(1996),223-226]Goto Takashi, Vargas J.R, Hirai Toshio
674.Ferroelectric and optical properties of Ba2NaNb5O15 thin films.[Journal of the Korean Physical Society,29,(1996),S664-S667]Masuda Y., Kidachi Y., Baba A., Masumoto H., Goto T., Hirai T.,
[1995]
675.A. C. electrical conduction and transport number measurements for defect-perovskite LaTa3O9.[J. Ceram. Soc. Jpn.,103(1),(1995),50-53]T. Goto, C. W. Chen, T. Hirai
http://ir.library.tohoku.ac.jp/re/handle/10097/53303
676.Preparation of W-B-C System Composites by Arc Melting and their Thermoelectric Properties.[J. Jpn. Soc. Powd. and Powd. Metallurgy,42(12),(1995),1406-1410]T. Goto, J. Li, T. Hirai
677.Synthesis and thermoelectric properties of silicon-boron compounds with high boron contents.[Proc. 3rd Inter. Symp. on Structural and Functional Gradient Materials, Ed. by B. Ilschner and N. Cherradi, Lausanne, Switzerland, 1994,(1995),613-618]L. Chen, T. Goto, M. Mukaida, M. Niino, T. Hirai
678.High-Temperature Oxidation Behavior of CVD Silicon Carbide and Silicon Nitride.[Proc. 6th Symp. High-Performance Materials for Severe Environments,(1995),331-338]T. Goto, T. Narusima, Y. Iguchi, T. Hirai
679.Seebeck coefficient measurements by AC method for thermoelectric materials.[Proc. 4th Asian Thermophysical Properties Conf., Tokyo, 1995,2,(1995),405-408]T. Goto, J. Li, T. Hirai
680.High-temperature oxidation behavior of CVD SiC and Si3N4.[Proc. 95' Beijing international conference for surface science and engineering edited by Rizhang Zhu,(1995),401-406]T. Goto, T. Hirai, T. Narushima, Y. Iguchi
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