Original Papers- GOTO Takashi -
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[1996]
661.Measurements of seebeck coefficient and relating issues.[New Ceramics,9(11),(1996),45-50]T. Goto
662.Preparation of Iridium Films by MOCVD and Their Application for Oxygen Gas Sensor.[Proc. 3rd M. V. Mokhosoev Memorial Inter. Seminar on New Materials, Irkutsk, Russia, 1996,(1996),76]T. Goto, T. Ono, T. Hirai
663.Effect of Phase Composition and Microstructure to Thermoelectric Property of Silicon Borides(in Japanese).[電気学会論文誌A,116-A,(1996),248-252]L. Chen, T. Goto, J. Li, M. Niino, T. Hirai
664.Preparation and Pressureless Sintering of Chemical Vapour Deposited SiC-B Composite Powder.[Journal of Materials Science,31,(1996),679-683]Chen Lidong, Goto Takashi, Hirai Toshio
665.Preparation of Iridium Clusters by MOCVD and Their Electrochemical Properties.[Materials Science and Engineering A - Structural Materials Properties Microstructure and Processing,A217/218,(1996),223-226]Goto Takashi, Vargas J.R, Hirai Toshio
666.Ferroelectric and optical properties of Ba2NaNb5O15 thin films.[Journal of the Korean Physical Society,29,(1996),S664-S667]Masuda Y., Kidachi Y., Baba A., Masumoto H., Goto T., Hirai T.,
[1995]
667.A. C. electrical conduction and transport number measurements for defect-perovskite LaTa3O9.[J. Ceram. Soc. Jpn.,103(1),(1995),50-53]T. Goto, C. W. Chen, T. Hirai
http://ir.library.tohoku.ac.jp/re/handle/10097/53303
668.Preparation of W-B-C System Composites by Arc Melting and their Thermoelectric Properties.[J. Jpn. Soc. Powd. and Powd. Metallurgy,42(12),(1995),1406-1410]T. Goto, J. Li, T. Hirai
669.Synthesis and thermoelectric properties of silicon-boron compounds with high boron contents.[Proc. 3rd Inter. Symp. on Structural and Functional Gradient Materials, Ed. by B. Ilschner and N. Cherradi, Lausanne, Switzerland, 1994,(1995),613-618]L. Chen, T. Goto, M. Mukaida, M. Niino, T. Hirai
670.High-Temperature Oxidation Behavior of CVD Silicon Carbide and Silicon Nitride.[Proc. 6th Symp. High-Performance Materials for Severe Environments,(1995),331-338]T. Goto, T. Narusima, Y. Iguchi, T. Hirai
671.Seebeck coefficient measurements by AC method for thermoelectric materials.[Proc. 4th Asian Thermophysical Properties Conf., Tokyo, 1995,2,(1995),405-408]T. Goto, J. Li, T. Hirai
672.High-temperature oxidation behavior of CVD SiC and Si3N4.[Proc. 95' Beijing international conference for surface science and engineering edited by Rizhang Zhu,(1995),401-406]T. Goto, T. Hirai, T. Narushima, Y. Iguchi
673.Hardness and microstructure of Sic-B4C eutectic ceramics prepared by arc melting.[J. Jpn. Soc. Powd. and Powd. Metallurgy,42(4),(1995),469-473]T. Goto, E. Ito, T. Hirai
674.Optical Properties of Ba[2]NaNb[5]O[15] Film Fabricated by RF Magnetron Sputtering Method.[Japanese Journal of Applied Physics,34,(1995),5124-5131]Masuda Yoichiro, Masumoto Hiroshi, Kidachi Yuuki, Watadzu Akira, Baba Akira, Goto Takashi, Hirai Toshio
675.A.C. Electrical Conduction and Transport Number Measurements for Defect-Perovskite LaTa[3]O[9].[J. Ceram. Soc. Jpn., Int. Ed.,103,(1995),49-52]Goto Takashi., Chen Chun Wei., Hirai Toshio.
[1994]
676.High-temperature passive-active oxidation for CVD SiC and Si3N4.[Silicon-based structural ceramics, Ceramics transactions, edited by B. W. sheldon and S. C. danforth,42,(1994),307-318]T. Goto, T. Narushima, Y. Iguchi, T. Hirai
677.Tungsten-bronze Ba2NaNb5O15 and layer-structured Bi4Ti3O12 ferroelectric thin films.[The bulletin of H.I.T.,13,(1994),17-24]Y. Masuda, H. Masumoto, A. Baba, T. Goto, T. Hirai
678.Thermoelectric Properties of SiC-B4C Eutectic Ceramics.[1994年度傾斜機能材料論文集, FGM'94,(1994),195-199]T. Goto, E. Ito , M. Mukaida, T. Hirai
679.Active/Passive oxidation Behavior of CVD Silicon Carbide.[Proc. 5th Symp. High-Performance Materials for Severe Environments,(1994),375-382]T. Goto, T. Narusima, Y. Iguchi, T. Hirai
680.high-temperature active oxidation of CVD-Si3N4 in N2-O2 atmosphere.[Trans. Mat. Res. Soc. Jpn.,14A,(1994),281-284]T. Narushima, J. Hagiwara, N. Kikuchi, Y. Iguchi, T. Goto, T. Hirai
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