Original Papers- GOTO Takashi -
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total:771
[2002]
561.Thermal diffusivity of La1-XCaXMnO3 up to 1200K.[Physica B,316,(2002),261-264]H. Fujishiro, M. Ikebe, T. Akashi, T. Goto
562.Low temperature oxidation of CVD SiC by electron cyclotron resonance plasma.[Mater. Chem. Phys.,75,(2002),235-240]T. Goto, H. Masumoto, M. Niizuma
563.Preparation of BaTiO3-BaZrO3 films by metal-organic chemical vapor deposition.[Jpn. J. Appl. Phys.,41(11B),(2002),6643-6646]T. Tohma, H. Masumoto and T. Goto
564.Microstructure and dielectric properties of barium titanate film prepared by MOCVD.[Mater. Trans.,43(11),(2002),2880-2884]T. Tohma, H. Masumoto, T. Goto
565.Preparation of Au/SiO2 nano-composite multilayers by helicon plasma sputtering and their optical properties.[Mater. Trans.,43(11),(2002),2855-2859]B.P. Zhang, H. Masumoto, Y. Someno, T. Goto
566.Synthesis and thermoelectric properties of p-type barium-filled skutterudite BayFexCo4-xSb12.[J. Mater. Res.,17(11),(2002),2953-2959]X.F. Tang, L.D. Chen, T. Goto, T. Hirai, R.Z. Yuan
http://ir.library.tohoku.ac.jp/re/handle/10097/52159
567.Preparation of Ag-alloy top-electrode for ferroelectric Pb(Zr,Ti)O3 films under various atmospheres.[Jpn. J. Appl. Phys.,41(11B),(2002),6882-6885]H. Masumoto, A. Kojima, T. Iijima, T. Goto
568.High-temperature oxidation behavior of chemical-vapor-deposited silicon-carbide.[J. Ceram. Soc. Jpn.,110(10),(2002),884-889]T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52367
569.Characterization of directionally solidified B4C-SiC composites prepared by a Floating Zone method.[Materials Transactions,43(9),(2002),2309-2315]I. Gunjishima, T. Akashi, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52182
570.Effect of filling fraction on thermoelectric properties of p-type BayFe1.6Co2.4Sb12.[Journal of Wuhan Uniersity Technology - Materials Science Edition,17(3),(2002),8-12]X.F. Tang, L.D. Cheng, L.M. Zhang, T. Goto, T. Hirai, R.Z. Yuan
571.Rapid synthesis of yttria-partially-stabilized zirconia films by metal-organic chemical vapor deposition.[Mater. Trans.,43(9),(2002),2354-2356]R. Tu, T. Kimura, T. Goto
572.Thermoelectric properties of hot-pressed boron suboxide (B6O).[Mater. Trans.,43(7),(2002),1719-1723]T. Akashi, T. Itoh, I. Gunjishima, H. Masumoto, T. Goto
573.Characterization of directionally solidified B4C-TiB2 composites prepared by a floating zone method.[Mater. Trans.,43(4),(2002),712-720]I. Gunjishima, T. Akashi, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52333
574.Preparation and characteristics of piezoerectric/ion-conductor multi funcional film.[Materia Japan,41(3),(2002),174-177]MASUMOTO Hiroshi, TOHMA Tetsuro, GOTO Takashi
575.Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC.[Corrosion Science,44,(2002),359-370]T. Goto, H. Homma, T. Hirai
576.Thermoelectric properties of n-type BayNixCo4-xSb12.[Wuli Xuebao/Acta Physica Sinica,51(12),(2002),2823-]Tang, X.-F., Chen, L.-D., Goto, T., Hirai, T., Yuan, R.-Z.
577.Thermoelectric properties of n-type BayNixCo4-xSb12 .[Acta Physica Sinica,51,(2002),2827-2828]X.-F. Tang, L.-D. Chen, T. Goto, T. Hirai and R.-Z. Yuan
[2001]
578.Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds.[Appl. Phys. Lett.,79,(2001),4165-4167]Shen Q., Chen L., Goto T., Hirai T., Yang J., Meisner GP., Uher C.,
http://ir.library.tohoku.ac.jp/re/handle/10097/51718
579.Electrochemical properties of iridium-carbon nano composite films prepared by MOCVD.[Scripta Mater.,44,(2001),1187-1190]T. Goto, T. Ono, T. Hirai
580.Synthesis of Dense Forms of B-C-N System Using Chemical-Vapor-Deposition/High-Pressure Process.[J. Mater. Sci.,36,(2001),679-684]Onodera A., Matsumoto K., Hirai Toshio, Goto Takashi, Motoyama M., Yamada K., Kohzuki H.
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