Original Papers- GOTO Takashi -
number of results to view: what to display: sort:
561.Rapid synthesis of yttria-partially-stabilized zirconia films by metal-organic chemical vapor deposition.[Mater. Trans.,43(9),(2002),2354-2356]R. Tu, T. Kimura, T. Goto
562.Characterization of directionally solidified B4C-SiC composites prepared by a Floating Zone method.[Materials Transactions,43(9),(2002),2309-2315]I. Gunjishima, T. Akashi, T. Goto
563.Effect of filling fraction on thermoelectric properties of p-type BayFe1.6Co2.4Sb12.[Journal of Wuhan Uniersity Technology - Materials Science Edition,17(3),(2002),8-12]X.F. Tang, L.D. Cheng, L.M. Zhang, T. Goto, T. Hirai, R.Z. Yuan
564.Thermoelectric properties of hot-pressed boron suboxide (B6O).[Mater. Trans.,43(7),(2002),1719-1723]T. Akashi, T. Itoh, I. Gunjishima, H. Masumoto, T. Goto
565.Characterization of directionally solidified B4C-TiB2 composites prepared by a floating zone method.[Mater. Trans.,43(4),(2002),712-720]I. Gunjishima, T. Akashi, T. Goto
566.Preparation and characteristics of piezoerectric/ion-conductor multi funcional film.[Materia Japan,41(3),(2002),174-177]MASUMOTO Hiroshi, TOHMA Tetsuro, GOTO Takashi
567.Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC.[Corrosion Science,44,(2002),359-370]T. Goto, H. Homma, T. Hirai
568.Thermoelectric properties of n-type BayNixCo4-xSb12.[Wuli Xuebao/Acta Physica Sinica,51(12),(2002),2823-]Tang, X.-F., Chen, L.-D., Goto, T., Hirai, T., Yuan, R.-Z.
569.Thermoelectric properties of n-type BayNixCo4-xSb12 .[Acta Physica Sinica,51,(2002),2827-2828]X.-F. Tang, L.-D. Chen, T. Goto, T. Hirai and R.-Z. Yuan
570.Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds.[Appl. Phys. Lett.,79,(2001),4165-4167]Shen Q., Chen L., Goto T., Hirai T., Yang J., Meisner GP., Uher C.,
571.Electrochemical properties of iridium-carbon nano composite films prepared by MOCVD.[Scripta Mater.,44,(2001),1187-1190]T. Goto, T. Ono, T. Hirai
572.Dielectric properties of Ba-Ti-O thin films prepared by MOCVD.[Proc. 2000 12th IEEE Int. Symp. Applications of Ferroelectrics (ISAF 2000),II,(2001),841-844]H. Masumoto, T. Tohma, T. Goto, T. Smirnova, Y. Masuda, T. Hirai
573.GeSi single crystals as thermoelectric materials.[Proc.19th Inter. Conf. Thermoelectrics (ICT2000),(2001)]I. Yonenaga, T. Akashi, T. Goto, S. Yamaguchi
574.Synthesis and thermoelectric properties of filled skutterudite compounds CeyFexCo4-xSb12 by solid state reaction.[J. Mater. Sci.,36,(2001),5435-5439]Tang XF., Chen LD., Goto T., Hirai T., Yuan RZ.,
575.Synthesis of Dense Forms of B-C-N System Using Chemical-Vapor-Deposition/High-Pressure Process.[J. Mater. Sci.,36,(2001),679-684]Onodera A., Matsumoto K., Hirai Toshio, Goto Takashi, Motoyama M., Yamada K., Kohzuki H.
576.High-Temperature Oxidation of CVD SiC in O2 and CO2 Atmospheres.[Materials at High Temperatuers,18(S),(2001),309-315]Goto Takashi, Homma Hisashi, Hirai Toshio
577.Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method.[J. Mater. Sci. Lett.,20(24),(2001),2197-2199]Shen Q., Zhang LM., Chen LD., Goto T., Hirai T.
578.High-temperature thermoelectric properties of n-type BayNixCo4-xSb12.[J. Mater. Res.,16,(2001),3343-3346]Tang XF., Zhang LM., Yuan RZ., Chen LD., Goto T., Hirai T., Dyck JS., Chen W., Uher C.,
579.Corosion Behavior of Glass Coated Hastelloy-XR in Boiling Sulfric Acid.[Mater. Trans. JIM,42(10),(2001),2093-2097]Rong Tu, Takashi Goto, Lidong Chen, Toshio Hirai, Lianmeng Zhang
580.Phase Relationship in a BaO-Bi2O3-TiO2 System and Electrical Properties of BaTiO3 with Addition of Bi4Ti3O12.[Mater. Trans.,42(8),(2001),1823-1826]T. Akashi, K. Morita, T. Hirai, H. Yamane, T. Goto
Pageļ¼š [prev] [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [next]
copyright(c)2005 Tohoku University