Original Papers- GOTO Takashi -
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total:763
[2003]
541.Thermal barrier coatings produced by chemical vapor deposition.[Sci. Technol. Adv. Mater.,4,(2003),397-402]J. R. Vargas Garcia, T. Goto
542.Ultra-high temperature oxidation behavior of chemical vapor depositd silicon carbide layers.[Proc. 3rd Int. Symp. Mater. Chem. in Nuclear Environment (Material Chemistry '02 MC '02)(JAERI-Conf 2003-001)(March 13-15, 2002, Tsukuba, Japan. Japan Atomic Energy Research Institute)),(2003),195-202]T. Goto
543.Corrosion behavior of ceramis-coated Hastelloy-XR-alloy in an Ar-So 2 atmosphere.[Mater. Trans.,44(5),(2003),962-967]R. Tu, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52337
544.Preparation of BaTi2O5 single crystal by a floating zone method.[Mater. Trans.,44(4),(2003),802-804]T. Akashi, H. Iwata, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52244
545.Preparation of RuO2-YSZ nano-composite films by MOCVD.[Surface and Coatings Technology,167(2-3),(2003),240-244]Teiichi Kimura, Takashi Goto
10.1016/S0257-8972(02)00913-1
546.Oxidation of boron carbide-silicon carbide composite at 1073 to 1773 K.[Mater. Trans.,44(3),(2003),401-406]T. Narushima, T. Goto, M. Maruyama, H. Atashi, Y. Iguchi
547.Acceleration of deposition rates in a chemical vapor deposition process by laser irradiation.[Jpn. J. Appl. Phys.,42(3B),(2003),L316-L318]H. Miyazaki, T. Kimura, T. Goto
548.Rapid synthesis of yttria-stabilized zirconia films by laser chemical vapor deposition.[Mater. Trans.,44(3),(2003),421-424]T. Kimura, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52346
549.Optical properties of Au/SiO2 nano-composite films prepared by induction-coil-coupled plasma sputtering.[Mater. Trans.,44(2),(2003),215-219]B.-P. Zhang, H. Masumoto, Y. Someno, T. Goto
550.Oxidation of Hastelloy-XR alloy for corrosion-resistant glass-coating.[J. Mater.Sci.Technol.,19(1),(2003),19-22]R. Tu, T. Goto
[2002]
551.Thermal diffusivity of La1-XCaXMnO3 up to 1200K.[Physica B,316,(2002),261-264]H. Fujishiro, M. Ikebe, T. Akashi, T. Goto
552.Low temperature oxidation of CVD SiC by electron cyclotron resonance plasma.[Mater. Chem. Phys.,75,(2002),235-240]T. Goto, H. Masumoto, M. Niizuma
553.High-temperature active/passive oxidation and bubble formation of CVD SiC in O2 and CO2 atmospheres.[J. Euro. Ceram. Soc.,22,(2002),2749-2756]T. Goto, H. Homma
554.Thermal and electrical properties of Czochralski grown GeSi single crystals.[Mate. Res. Soc. Symp. Proc. (Thermoelectric Materials 2001- Resesarch and Applications, Nov. 26-29, 2001, Boston, Massacusetts, USA, Eds. G. S. Nolas, et al., Materials Research Society, U. S. A.),691,(2002),169-174]I. Yonenaga, T. Akashi, T. Goto
555.Microstructure and dielectric properties of barium titanate film prepared by MOCVD.[Mater. Trans.,43(11),(2002),2880-2884]T. Tohma, H. Masumoto, T. Goto
556.Preparation of Au/SiO2 nano-composite multilayers by helicon plasma sputtering and their optical properties.[Mater. Trans.,43(11),(2002),2855-2859]B.P. Zhang, H. Masumoto, Y. Someno, T. Goto
557.Synthesis and thermoelectric properties of p-type barium-filled skutterudite BayFexCo4-xSb12.[J. Mater. Res.,17(11),(2002),2953-2959]X.F. Tang, L.D. Chen, T. Goto, T. Hirai, R.Z. Yuan
http://ir.library.tohoku.ac.jp/re/handle/10097/52159
558.Preparation of Ag-alloy top-electrode for ferroelectric Pb(Zr,Ti)O3 films under various atmospheres.[Jpn. J. Appl. Phys.,41(11B),(2002),6882-6885]H. Masumoto, A. Kojima, T. Iijima, T. Goto
559.Preparation of BaTiO3-BaZrO3 films by metal-organic chemical vapor deposition.[Jpn. J. Appl. Phys.,41(11B),(2002),6643-6646]T. Tohma, H. Masumoto and T. Goto
560.High-temperature oxidation behavior of chemical-vapor-deposited silicon-carbide.[J. Ceram. Soc. Jpn.,110(10),(2002),884-889]T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52367
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