Original Papers- GOTO Takashi -
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total:771
[2003]
541.Transport of lanthanum ion and hole in LaCrO3 determined by electrical conductivity measurements.[Solid State Ionics,164,(2003),177-183]T. Akashi, T. Maruyama, T. Goto
542.Wet oxidation of slisicon carbide and silicon nitride.[Met. Mater. Processes,15(1-2),(2003),177-186]T. Narushima, T. Goto, C. Ouchi, Y. Iguchi
543.Dielectric proerties of Ba(Ti0.85Zr0.15)03 film prepared by metalorganic chemical vapor deposition.[Jpn. J. Appl. Phys.,12(11),(2003),6969-6972]T. Tohma, H. Masumoto and T. Goto
544.A ferroelectric barium titanate, BaTi2O5.[Acta Cryst. C,c59,(2003),i128-i130]T. Kimura, T. Goto, H. Yamane, H. Iwata, T. Kajiwara, T. Akashi
545.Chemical vapor deposition of iridium, platinum, rhodium and palladium.[Mater. Trans.,44(9),(2003),1717-1728]J. R. Vargas Garcia, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52132
546.Fabrication of condtinuously porous alumina body by fibrous monolithic and sintering process.[Mater. Trans.,44(9),(2003),1851-1856]T.-S. Kim, I.-C. Kang, T. Goto, B.-T. Lee
http://ir.library.tohoku.ac.jp/re/handle/10097/52160
547.Optical properties of Au nanoparticle dispersed TiO2 films prepared by laser ablation.[Mater. Trans.,44(8),(2003),1599-1603]A. Ito, H. Masumoto, T. Goto
548.Dielectric property of single crystalline BaTi2O5 prepared by a floating zone method.[Mater. Trans.,44(8),(2003),1644-1646]T. Akashi, H. Iwata, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52319
549.Thermal barrier coatings produced by chemical vapor deposition.[Sci. Technol. Adv. Mater.,4,(2003),397-402]J. R. Vargas Garcia, T. Goto
550.Ultra-high temperature oxidation behavior of chemical vapor depositd silicon carbide layers.[Proc. 3rd Int. Symp. Mater. Chem. in Nuclear Environment (Material Chemistry '02 MC '02)(JAERI-Conf 2003-001)(March 13-15, 2002, Tsukuba, Japan. Japan Atomic Energy Research Institute)),(2003),195-202]T. Goto
551.Corrosion behavior of ceramis-coated Hastelloy-XR-alloy in an Ar-So 2 atmosphere.[Mater. Trans.,44(5),(2003),962-967]R. Tu, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52337
552.Preparation of BaTi2O5 single crystal by a floating zone method.[Mater. Trans.,44(4),(2003),802-804]T. Akashi, H. Iwata, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52244
553.Preparation of RuO2-YSZ nano-composite films by MOCVD.[Surface and Coatings Technology,167(2-3),(2003),240-244]Teiichi Kimura, Takashi Goto
10.1016/S0257-8972(02)00913-1
554.Acceleration of deposition rates in a chemical vapor deposition process by laser irradiation.[Jpn. J. Appl. Phys.,42(3B),(2003),L316-L318]H. Miyazaki, T. Kimura, T. Goto
555.Oxidation of boron carbide-silicon carbide composite at 1073 to 1773 K.[Mater. Trans.,44(3),(2003),401-406]T. Narushima, T. Goto, M. Maruyama, H. Atashi, Y. Iguchi
556.Rapid synthesis of yttria-stabilized zirconia films by laser chemical vapor deposition.[Mater. Trans.,44(3),(2003),421-424]T. Kimura, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52346
557.Optical properties of Au/SiO2 nano-composite films prepared by induction-coil-coupled plasma sputtering.[Mater. Trans.,44(2),(2003),215-219]B.-P. Zhang, H. Masumoto, Y. Someno, T. Goto
558.Oxidation of Hastelloy-XR alloy for corrosion-resistant glass-coating.[J. Mater.Sci.Technol.,19(1),(2003),19-22]R. Tu, T. Goto
[2002]
559.High-temperature active/passive oxidation and bubble formation of CVD SiC in O2 and CO2 atmospheres.[J. Euro. Ceram. Soc.,22,(2002),2749-2756]T. Goto, H. Homma
560.Thermal and electrical properties of Czochralski grown GeSi single crystals.[Mate. Res. Soc. Symp. Proc. (Thermoelectric Materials 2001- Resesarch and Applications, Nov. 26-29, 2001, Boston, Massacusetts, USA, Eds. G. S. Nolas, et al., Materials Research Society, U. S. A.),691,(2002),169-174]I. Yonenaga, T. Akashi, T. Goto
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