Original Papers- GOTO Takashi -
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521.A lead-free high-Tc ferroelectric BaTi2O5: A first-principles study.[Appl. Phys. Lett.,84(24),(2004),4917-4919]U. Waghmare, M. H. F. Sluiter, T. Kimura, T. Goto, Y. Kawazoe
522.Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition.[J.Eur. Ceram. Soc.,24,(2004),1005-1008]H. Miyazaki, T. Goto, Y. Miwa, T. Ohno, H. Suzuki, T. Ota, M. Takahashi,
523.Thermal conductivity of yttria-stabilized zirconia films measured by a laser-heating AC method.[Trans. Mater. Res. Soc. Jpn.,29(5),(2004),385-388]T. Kimura, T. Goto
524.Lattice thermal conductivity of RyMx Co4-xSb12.[Acta. Phys. Sinica,53(5),(2004),1463-1468]X.F. Tang, L.D. Chen, W. Jun, P.F. Luo, Q.J. Zhang, T. Goto, T. Hirai, R.Z. Yuan
525.Microstructure control of Al2O3-ZrO2 composite by fibrous monolithic process.[Rev. Adv. Mater. Sci.,6,(2004),1-6]T.-S. Kim, D.-H. Jang, T. Goto, B.-T. Lee
526.Preparation of IrO2 thin films by oxidating laser-ablated Ir.[Mater. Trans.,45(3),(2004),900-903]Y. Liu, H. Masumoto, T. Goto
527.Lekage current propreties of PZT thin film capacitors.[八戸工業大学異分野融合科学研究所紀要,2(1),(2004),19-24]Y. Masuda, T. Nozaka, H. Masumoto, T. Goto
528.Ionic conductivity enhancement of YSZ film induced by piezoelectric vibration.[Materials Transactions,45(2),(2004),240-243]H. Masumoto, T. Goto
529.A new laser CVD process for thermal barrier coatings.[Trans. Mater. Res. Soc. Jpn.,29(2),(2004),381-384]T. Goto, T. Kimura, H. Miyazaki
530.Microstructure of YSZ films prepared by MOCVD.[Trans. Mater. Res. Soc. Jpn.,29(2),(2004),389-392]R. Tu, T. Kimura, T. Goto
531.Microstructure control of Al203/ZrO2 composite by fibrous monolithic process.[Mater. Trans.,45(2),(2004),431-434]T.-S. Kim, K.-H. Kim, T. Goto, B.-T. Lee
532.Crystal structure and thermoelectric properties of the composite crystal [(Ca1-xSrx)2CoO3]pCoO2.[Proc. 21st International conference on thermoelectrics,(2003),226-229]Y. Miyazaki, T. Miura, Y. Ono, T. Akashi, T. Goto , T. Kajitani
533.Application of Sr β-alumina solid electrolyte to a CO2 gas sensor.[Solid State Ionics,156,(2003),329-336]T. Goto, G. He, T. Narushima, Y. Iguchi
534.Characterization of directionally solidified B4C-TiB2 andB4C-SiC eutectic comosites prepared by a floating-zone method.[Key Eng. Mater.,247,(2003),209-212]T. Akashi, I. Gunjishima, T. Goto
535.Electrical conductivity of non-stoichometric Sr β-alumina single crystals prepared by a floating zone method.[Solid State Ionics,156,(2003),425-431]A.Y. Zhang, T. Akashi, T. Goto
536.Anisotropy of electrical conductivity for alkaline earth beta-alumina single crystals prepared by a floating zone method.[Solid State Ionics,156,(2003),349-355]A.Y. Zhang, T. Akashi, T. Goto
537.Preparation of hydrogenated amorphous silicon by ECR plasma sputtering and the effect on retinoic acid and membrane protein polypeptides.[Thin Solid Films,438-439,(2003),90-96]Y. Tsujiuchi, J. Suto, K. Goto, S. Shibata, T. Ishimaru, M. Ihara, H. Masumoto, T. Goto
538.Corrsion test on structural materials for iodine-sulfur thermochemical water splitting cycle.[Proc. AICHE 2003 Spring National Meeting,(2003)]S. Kubo, M. Futakawa, I. Ioka, K. Onuki, S. Shimizu, K. Ohsaka, A. Yamaguchi, R. Tsukada, T. Goto
539.Characterization of directionally solidified B4C-TiB2 and B4C-SiC eutectic composites prepared by floating-zone method.[Key Eng. Mater.,247,(2003),209-212]T. Akashi, I. Gunjishima, T. Goto
540.Synthesis and sintering of ZrNiSn-based half-Heusler compounds.[J. Mater. Sci. Technol.,19,(2003),511-512]Q. Shen, LM. Zhang, LD. Chen, T. Goto, T. Hirai,
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