Original Papers- GOTO Takashi -
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total:763
[2004]
521.Microstructure of YSZ films prepared by MOCVD.[Trans. Mater. Res. Soc. Jpn.,29(2),(2004),389-392]R. Tu, T. Kimura, T. Goto
522.A new laser CVD process for thermal barrier coatings.[Trans. Mater. Res. Soc. Jpn.,29(2),(2004),381-384]T. Goto, T. Kimura, H. Miyazaki
523.Microstructure control of Al203/ZrO2 composite by fibrous monolithic process.[Mater. Trans.,45(2),(2004),431-434]T.-S. Kim, K.-H. Kim, T. Goto, B.-T. Lee
http://ir.library.tohoku.ac.jp/re/handle/10097/52256
[2003]
524.Crystal structure and thermoelectric properties of the composite crystal [(Ca1-xSrx)2CoO3]pCoO2.[Proc. 21st International conference on thermoelectrics,(2003),226-229]Y. Miyazaki, T. Miura, Y. Ono, T. Akashi, T. Goto , T. Kajitani
525.Application of Sr β-alumina solid electrolyte to a CO2 gas sensor.[Solid State Ionics,156,(2003),329-336]T. Goto, G. He, T. Narushima, Y. Iguchi
526.Preparation of hydrogenated amorphous silicon by ECR plasma sputtering and the effect on retinoic acid and membrane protein polypeptides.[Thin Solid Films,438-439,(2003),90-96]Y. Tsujiuchi, J. Suto, K. Goto, S. Shibata, T. Ishimaru, M. Ihara, H. Masumoto, T. Goto
527.Characterization of directionally solidified B4C-TiB2 andB4C-SiC eutectic comosites prepared by a floating-zone method.[Key Eng. Mater.,247,(2003),209-212]T. Akashi, I. Gunjishima, T. Goto
528.Electrical conductivity of non-stoichometric Sr β-alumina single crystals prepared by a floating zone method.[Solid State Ionics,156,(2003),425-431]A.Y. Zhang, T. Akashi, T. Goto
529.Anisotropy of electrical conductivity for alkaline earth beta-alumina single crystals prepared by a floating zone method.[Solid State Ionics,156,(2003),349-355]A.Y. Zhang, T. Akashi, T. Goto
530.Corrsion test on structural materials for iodine-sulfur thermochemical water splitting cycle.[Proc. AICHE 2003 Spring National Meeting,(2003)]S. Kubo, M. Futakawa, I. Ioka, K. Onuki, S. Shimizu, K. Ohsaka, A. Yamaguchi, R. Tsukada, T. Goto
531.Transport of lanthanum ion and hole in LaCrO3 determined by electrical conductivity measurements.[Solid State Ionics,164,(2003),177-183]T. Akashi, T. Maruyama, T. Goto
532.Characterization of directionally solidified B4C-TiB2 and B4C-SiC eutectic composites prepared by floating-zone method.[Key Eng. Mater.,247,(2003),209-212]T. Akashi, I. Gunjishima, T. Goto
533.Synthesis and sintering of ZrNiSn-based half-Heusler compounds.[J. Mater. Sci. Technol.,19,(2003),511-512]Q. Shen, LM. Zhang, LD. Chen, T. Goto, T. Hirai,
534.Wet oxidation of slisicon carbide and silicon nitride.[Met. Mater. Processes,15(1-2),(2003),177-186]T. Narushima, T. Goto, C. Ouchi, Y. Iguchi
535.Dielectric proerties of Ba(Ti0.85Zr0.15)03 film prepared by metalorganic chemical vapor deposition.[Jpn. J. Appl. Phys.,12(11),(2003),6969-6972]T. Tohma, H. Masumoto and T. Goto
536.A ferroelectric barium titanate, BaTi2O5.[Acta Cryst. C,c59,(2003),i128-i130]T. Kimura, T. Goto, H. Yamane, H. Iwata, T. Kajiwara, T. Akashi
537.Chemical vapor deposition of iridium, platinum, rhodium and palladium.[Mater. Trans.,44(9),(2003),1717-1728]J. R. Vargas Garcia, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52132
538.Fabrication of condtinuously porous alumina body by fibrous monolithic and sintering process.[Mater. Trans.,44(9),(2003),1851-1856]T.-S. Kim, I.-C. Kang, T. Goto, B.-T. Lee
http://ir.library.tohoku.ac.jp/re/handle/10097/52160
539.Dielectric property of single crystalline BaTi2O5 prepared by a floating zone method.[Mater. Trans.,44(8),(2003),1644-1646]T. Akashi, H. Iwata, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/52319
540.Optical properties of Au nanoparticle dispersed TiO2 films prepared by laser ablation.[Mater. Trans.,44(8),(2003),1599-1603]A. Ito, H. Masumoto, T. Goto
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