Original Papers- GOTO Takashi -
number of results to view: what to display: sort:
total:763
[2019]
21.Phase decomposition of (Ti, Zr)(C, N) solid solutions prepared by spark plasma sintering.[Journal of the European Ceramic Society,39(15),(2019),4588-4594]Y. Li, H. Katsui, T. Goto
10.1016/j.jeurceramsoc.2019.06.046
22.Fabrication of an ultra-thick-oriented 3C-SiC coating on the inner surface of a graphite tube by high-frequency induction-heated halide chemical vapor deposition.[International Journal of Applied Ceramic Technology,6(3),(2019),1004-1101]R. Tu, X. Zhang, Y. Lai, M. Han, S. Zhang, J. Shi, H. Li, T. Goto, L. Zhang
23.Growth of umbrella-like millimeter-scale single-crystalline graphene on liquid copper.[Carbon,150,(2019),356-362]Chitengfei Zhang, Rong Tu, Mingdong Dong, Jun Li, Meijun Yang, Qizhong Li, Ji Shi, Haiwen Li, Hitoshi Ohmori, Song Zhang, Lianmeng Zhang, Takashi Goto
10.1016/j.carbon.2019.05.013
24.Fine-grained 3C-SiC thick films prepared via hybrid laser chemical vapor deposition.[Journal of American Ceramic Society,102(9),(2019),5668-5678]Youfeng Lai, Hong Cheng, Zhenglin Jia, Qizhong Li, Meijun Yang, Song Zhang, Mingxu Han, Rong Tu, Takashi Goto, Lianmeng Zhang
10.1111/jace.16445
25.Impedance study of spark-plasma-sintered lutetium titanate ceramics:Effect of post-annealing.[Ceramics International,45(13),(2019),16317-16322]Liqiong An, Jian Zhang, Runhua Fan, Takashi Goto, Shiwei Wang
10.1016/j.ceramint.2019.05.158
26.Effect of hydrogen flow on microtwins in 3C–SiC epitaxial films by laser chemical vapor deposition.[Thin Solid Films,678,(2019),8-15]Zhizhuang Liu, Qingfang Xu, Qingyun Sun, Jun Li, Rong Tu, Song Zhang, Meijun Yang, Qizhong Li, Zhao Deng, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Marina Kosinova
27.Preparation of (110)‐oriented SrTiO3 film on quartz glass by laser chemical vapor deposition.[Journal of the American Ceramic Society,102(4),(2019),2135-2142]Pei Zhao, Qiong Zhang, Wei Wu, Takashi Goto, Junxia Yu
28.Synthesis of Al2O3 coatings on Ti(C, N)-based cermets by microwave plasma CVD using Al(acac)3.[International Journal of Applied Ceramic Technology,16(6),(2019),2265-2272]Rong Tu, Yang Yuan, Litong Guo, Jun Li, Song Zhang, Meijun Yang, Qizhong Li, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Ji Shi, Haiwen Li
10.1111/ijac.13255
29.Structural investigation of Al2O3 coatings by PECVD with a high deposition rate.[International Journal of Applied Ceramic Technology,16(4),(2019),1356-1363]Song Zhang, Long Zheng, Geng Wei, Litong Guo, Jun Li, Rong Tu, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori
10.1111/ijac.13221
30.Effect of Functionally-Graded Calcium Titanate Film, Prepared by Metal-Organic Chemical Vapor Deposition, on Titanium Implant.[Applied Sciences,9(1),(2019),172-182]Naru Shiraishi, Risa Ishiko-Uzuka, Kenta Takahashi, Toru Ogawa, Takahisa Anada, Osamu Suzuki, Takashi Goto and Keiichi Sasaki
31.Morphology controlling of <111>-3C–SiC films by HMDS flow rate in LCVD.[RSC Advances,9,(2019),2426-2430]Qingfang Xu, Rong Tu, Qingyun Sun, Meijun Yang, Qizhong Li, Song Zhang, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Ji Shi, Haiwen Li, Marina Kosinova and Basu Bikramjit
32.Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD.[Materials,12,(2019),390-340]Zhiying Hu, Dingheng Zheng, Rong Tu, Meijun Yang, Qizhong Li, Mingxu Han, Song Zhang, Lianmeng Zhang and Takashi Goto
33.Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD.[Journal of the American Ceramic Society,102(8),(2019),4480-4491]Qingyun Sun, Meijun Yang, Jun Li, Qingfang Xu, Rong Tu, Qizhong Li, Song Zhang, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Marina Kosinova
10.1111/jace.16297
34.Preface.[Materials Today: Proceedings,16,(2019),1-3]Toyohiko Yano, Takashi Goto
[2018]
35.Electrical and Thermal Properties of Nitrogen-Doped SiC Sintered Body.[J. Jpn. Soc. Powder Powder Metallurgy,65(8),(2018),508-512]Yukina Taki, Mettaya Kittiwan, Hirokazu Katsui, Takashi Goto
36.回転CVD法によるFe3O4ナノ触媒粒子の合成とCO酸化触媒活性.[粉体および粉末冶金,65(8),(2018),502-507]中倉修平, 且井宏和, 後藤 孝, 服部将朋, 小澤正邦
37.High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition.[Journal of the American Ceramic Society,101(3),(2018),1048-1057]Qingyun Sun, Peipei Zhu, Qingfang Xu, Rong Tu, Song Zhang, Ji Shi, Haiwen Li, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li
10.1111/jace.15260
38.Structural features and surface composition of epitaxial α-FeSi2 films obtained by CVD.[Materials and Design,137,(2018),422-429]R.V. Pushkarev, N.I. Fainer, H. Katsui, V.V. Kaichev, T. Goto
10.1016/j.matdes.2017.10.030
39.Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition.[Japanese Journal of Applied Physics,57(2),(2018)]Mamoru Ishizawa, Hiroyuki Fujishiro, Tomoyuki Naito, Akihiko Ito, and Takashi Goto
40.Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD.[Journal of the American Ceramic Society,101(4),(2018),3850-3856]Peipei Zhu, Meijun Yang, Qingfang Xu, Qingyun Sun, Rong Tu, Jun Li, Song Zhang, Qizhong Li, Lianmeng Zhang, Takashi Goto1, Ji Shi1, Haiwen Li, Hitoshi Ohmori, Marina Kosinova, Bikramjit Basu
Page: [prev] [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [next]
BackTop
copyright(c)2005 Tohoku University