Books, Original Papers & Review Papers- GOTO Takashi -
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[B]:Books [O]:Original Papers [R]:Review Papers
total:871
[1981]
861.[O] POSITRON ANNIHILATION STUDY OF AMORPHOUS CVD Si3N4-C COMPOSITES.[Proceedings of the Eigth International Conference on Chemical Vapor Deposition 1981,(1981),227-224]Fumitake Itoh, Toshihisa Honda, Takashi Goto, Toshio Hirai, Kenji Suzuki
[1980]
862.[R] Preparation and electrical conductivity of chemically vapor deposited silicon nitride.[Electronic Ceramics,11, (1980), 9-14]T. Hirai, T. Goot
863.[O] Oxidation of CVD Si3N4 at 1550℃ to 1650℃.[Journal of The American Ceramic Society,63(7-8),(1980),419-424]TOSHIO HIRAI, KOICHI NIIHARA, TAKASHI GOTO
10.1111/j.1151-2916.1980.tb10204.x
864.[O] The D. C. electrical conductivity of chemically vapor deposited Si3N4.[Yogyo-Kyokai-Shi,88(7),(1980),401-404]T. Hirai, M. Shimada, T. Goto
10.2109/jcersj1950.88.1019_401
865.[O] High temperature X-ray diffraction equipment for investigating high temperature behavior of materials.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),81-83]T. Hirai, K. Niihara, T. Goto
866.[O] Thermal Properties of Amorphous Si3N4-C Composites Prepared by Chemical Vapor Deposition.[Science Reports of the Research Institutes Tohoku University Series A-Physics Chemistry and Metallurgy,29(2),(1980),176-183]Takashi Goto, Shinsuke Hayashi, Toshio Hirai
867.[O] Crystallization of amorphous CVD-Si3N4.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),112-115]T. Hirai, K. Niihara, T. Goto
868.[O] High temperature reaction rate measuring equipment for investigating high temperature behavior of materials.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),209-215]T. Hirai, K. Niihara, T. Goto
[1977]
869.[O] Preparation of Si3N4 by chemical vapour deposition (Effects of raw gas flow rate).[Bulltin of Japan Institute of Metals,41(4),(1977),358-367]T. Hirai, K. Niihara, T. Goto
http://ir.library.tohoku.ac.jp/re/handle/10097/53204
870.[O] Rapid chemical vapour-deposition of Si3N4.[Journal of Materials Science,12(3),(1977),631-632]Toshio Hirai, Koichi Niihara, Takashi Goto
10.1007/BF00540292
[1976]
871.[O] Chemical Vapor-Deposited Amorphous Silicon-Nitride.[Science Reports of the Research Institutes Tohoku University Series A-Physics Chemistry and Metallurgy,26,(1976),185-201]Toshio Hirai, Koichi Niihara, Shinsuke Hayashi, Takashi Goto
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