Books, Original Papers & Review Papers- GOTO Takashi -
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[B]:Books [O]:Original Papers [R]:Review Papers
total:863
[1986]
841.[O] CVD-ceramic composites.[Proc. New Materials Japan, Osaka, 1986,(1986),231-243]T. Hirai, T. Goto
842.[O] Atomic arrangement of CVD amorphous (Si3N4) -B.[KENS Rep. IV,(1986),167-170]T. Fukunaga, T. Goto, M. Misawa, T. Hirai, K. Suzuki
[1984]
843.[R] Synthesis of transparent ceramics by CVD method.[Industrial Materials,32(8), (1984), 1-8]T. Hirai, T. Goto
844.[O] Preparation of amorphous Si3N4-BN composites by chemical vapor deposition.[Mater. Sci. Res., "Emergent Process Methods for High-Technology Ceramics",17,(1984),347-358]T. Hirai, T. Goto and T. Sakai
[1983]
845.[O] ESCA study of amorphous CVD Si3N4-C composites.[Journal of Materials Science Letters,2(12),(1983),805-807]T. GOTO, F. ITOH, K. SUSUZKI, T. HIRAI
10.1007/BF00720564
846.[O] Preparation of silicon carbide by chemical vapor deposition.[Yogyo-Kyokai-Shi,91(11),(1983),502-509]T. Hirai, T. Goto, T. Kaji
10.2109/jcersj1950.91.1059_502
847.[O] Etching of Chemically Vapour-Deposited Amorphous Si3N4-C Composites in HF Solution.[Journal of Materials Science,18(11),(1983),3387-3392]TAKASHI GOTO, TOSHIO HIRAI
10.1007/BF00544164
848.[B] Preparation and electrical conductivity of amorphous CVD-3#DN#D#D4#D base composites.[Keiei System Inc.,(1983)]T. Hirai, T. Goto
849.[O] D. C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition.[Journal of Materials Science,18(2),(1983),383-390]TAKASHI GOTO, TOSHIO HIRAI
10.1007/BF00560626
[1982]
850.[R] Preparation of non-oxide amorphous ceramics by CVD.[Ceramics Japan,17(4), (1982), 264-270]T. Hirai, T. Goto
[1981]
851.[O] Density and deposition rates of amorphous CVD-Si3N4 including carbon.[Journal of Materials Science,16(10),(1981),2877-2882]TOSHIO HIRAI, TAKASHI GOTO
10.1007/BF00552973
852.[O] Preparation of amorphous Si3N4-C plate by chemical vapour deposition.[Journal of Materials Science,16(1),(1981),17-23]TOSHIO HIRAI, TAKASHI GOTO
10.1007/BF00552054
853.[O] POSITRON ANNIHILATION STUDY OF AMORPHOUS CVD Si3N4-C COMPOSITES.[Proceedings of the Eigth International Conference on Chemical Vapor Deposition 1981,(1981),227-224]Fumitake Itoh, Toshihisa Honda, Takashi Goto, Toshio Hirai, Kenji Suzuki
[1980]
854.[R] Preparation and electrical conductivity of chemically vapor deposited silicon nitride.[Electronic Ceramics,11, (1980), 9-14]T. Hirai, T. Goot
855.[O] Oxidation of CVD Si3N4 at 1550℃ to 1650℃.[Journal of The American Ceramic Society,63(7-8),(1980),419-424]TOSHIO HIRAI, KOICHI NIIHARA, TAKASHI GOTO
10.1111/j.1151-2916.1980.tb10204.x
856.[O] The D. C. electrical conductivity of chemically vapor deposited Si3N4.[Yogyo-Kyokai-Shi,88(7),(1980),401-404]T. Hirai, M. Shimada, T. Goto
10.2109/jcersj1950.88.1019_401
857.[O] High temperature X-ray diffraction equipment for investigating high temperature behavior of materials.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),81-83]T. Hirai, K. Niihara, T. Goto
858.[O] Thermal Properties of Amorphous Si3N4-C Composites Prepared by Chemical Vapor Deposition.[Science Reports of the Research Institutes Tohoku University Series A-Physics Chemistry and Metallurgy,29(2),(1980),176-183]Takashi Goto, Shinsuke Hayashi, Toshio Hirai
859.[O] Crystallization of amorphous CVD-Si3N4.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),112-115]T. Hirai, K. Niihara, T. Goto
860.[O] High temperature reaction rate measuring equipment for investigating high temperature behavior of materials.[Res. Rep. on Super High Temp. Mat. Sci. of RIISOM (Tohoku Univ.),(1980),209-215]T. Hirai, K. Niihara, T. Goto
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