Books, Original Papers & Review Papers- GOTO Takashi -
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[B]:Books [O]:Original Papers [R]:Review Papers
total:863
[1990]
821.[O] Morphology and Deposition Rates of TiB[2] Prepared by Chemical Vapour Deposition of TiCl[4] + B[2]H[6] System.[Journal of Materials Science,25,(1990),1069-1075]Mukaida M., Goto T., Hirai T.
822.[O] Preparation of titanium carbide plates by chemical vapour deposition.[Journal of Materials Science,25,(1990),1086-1093]C. C. Jiang, T. Goto, T. Hirai
[1989]
823.[R] Ceramic nano composites and ceramic fine composites.[Bull. Japan Inst. Met.,28(12), (1989), 960-967]T. Hirai, T. Goto
10.2320/materia1962.28.960
824.[O] Preparation of silicon carbide powders by chemical vapour deposition of the SiH4-CH4-H2 system.[Journal of Materials Science,24(11),(1989),3824-3830]L. Chen, T. Goto, T. Hirai
10.1007/BF01168942
825.[O] High-temperature passive oxidation of chemically vapor deposited silicon carbide.[Journal of the American Ceramic Society,72(8),(1989),1386-1390]T. Narushima, T. Goto, T. Hirai
10.1111/j.1151-2916.1989.tb07658.x
826.[O] As-grown superconducting Bi(-Pb)-Sr-Ca-Cu-O films by electron cyclotron resonance plasma sputtering.[Applied Physics Letters,55(5),(1989),498-500]H. Masumoto, T. Goto, T. Hirai
10.1063/1.101862
827.[O] Dielectric properties of chemically vapour-deposited Si3N4.[Journal of Materials Science,24(3),(1989),821-826]T. Goto, T. Hirai
10.1007/BF01148763
828.[O] Preparation of superconducting YBa2Cu3O7-x films by ECR plasma sputtering.[Japanese Journal of Applied Physics,28(1),(1989),L88-L90]T. Goto, H. Masumoto, T. Hirai
10.1143/JJAP.28.L88
829.[O] Active to passive transition in the oxidation of CVD-SiC.[Proc. MRS Int'l. Mtg. on Adv. Mats., 1989,4,(1989),295-300]H. Narushima, T. Goto, T. Hirai
[1988]
830.[R] Synthesis of ceramics by thermal CVD.[New Ceramics,(7), (1988), 58-64]T. Hirai, T. Goto
831.[O] ESCA study of amorphous CVD Si3N4-BN composites.[Journal of Materials Science Letters,7(5),(1988),548-550]T. Goto, T. Hirai
10.1007/BF01730723
[1987]
832.[O] Atomic-Scale Structure of CVD Amorphous Si3N4-BN Composite.[Journal of Non-Crystalline Solids,95&96(Part 2),(1987),1119-1126]T. Fukunaga, T. Goto, M. Misawa, T. Hirai, K. Suzuki
10.1016/S0022-3093(87)80724-X
833.[O] CHEMICALLY VAPOR DEPOSITED Ti3SiC2.[Materials Research Bulletin,22(9),(1987),1195-1201]T. Goto, T. Hirai
10.1016/0025-5408(87)90128-0
834.[O] Microstructures of SiC-TiC in-situ composites prepared by chemical vapor deposition.[J. Jpn. Soc. Powd. and Powd. Metall.,34(9),(1987),487-490]T. Goto, T. Hirai
10.2497/jjspm.34.487
835.[O] High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition.[Journal of Materials Science,22(8),(1987),2842-2846]T. Goto, T. Hirai
10.1007/BF01086480
836.[O] Thermodynamics for the chemical vapor deposition of SiCl4-TiCl4-CCl4-H2 system.[Journal of Chemical Society Japan,1987(11),(1987),1939-1945]T. Goto, T. Hirai
10.1246/nikkashi.1987.1939
837.[O] Preparation of silicon carbide powders by chemical vapor deposition.[Proc. '87 Inter. Symp. Exhib. Sci. Tech. Sintering, Ed. by S. Somiya, M. Shimada, M. Yoshimura and R. Watanabe, Tokyo, 1987,1,(1987),49-54]L. Chen, T. Goto and T. Hirai
838.[O] Preparation of SiC-TiC in-situ composites by chemical vapor deposition.[Proc. 10th Inter. Conf. on Chemical Vapor Deposition, Ed. by G. W. Cullen, New Jersey, 1987,(1987),1070-1079]T. Goto, T. Hirai
[1986]
839.[B] Tailoring Multiphase and Composite Ceramics.[Plenum Publishing Corporation,(1986)]T. Hirai, T. Goto
ISBN978-1-4612-9309-5
840.[R] Hybrid ceramics.[Polymer,35(4), (1986), 352-355]T. Hirai, T. Goto
10.1295/kobunshi.35.352
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