Books, Original Papers & Review Papers- GOTO Takashi -
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801.[O] Preparation and optical properties of bismuth titanate films by ECR plasma sputtering.[J. Jpn. Soc. Powd. and Powd. Metallurgy,39(2),(1992),109-112]H. Masumoto, T. Goto, Y. Masuda, A. Baba, T. Hirai
802.[O] Thermoelectric properties of Si-Ti-B in situ composito plates prepared by chemical vapor deposition.[Mater. Manu. Process,7(4),(1992),625-647]M. Mukaida, T. Goto, T. Hirai
803.[O] ECRプラズマスパッタリング法によるチタン酸ビスマス膜の作製と光学特性.[粉体および粉末冶金,39,109-112,(1992)]GOTO Takashi, et al.
804.[O] Coating of titanium carbide films on stainless steel by chemical vapour deposition and their corrosion behavior in a Br2-O2-Ar atmosphere.[J. Mater. Sci.,27(1),(1992),233-239]T. Goto, C. Y. Guo, H. Takeya, T. Hirai
805.[O] Epitaxial growth of Bi4Ti3O12 films by electron cyclotron resonance plasma sputtering.[Proc. 36th Jpn. Congress Mater. Res.,(1992),129-132]H. Masumoto, T. Goto, Y. Masuda, A. Baba, T. Hirai
806.[O] Preparation of superconducting oxide films by electron cyclotron resonance plasma sputtering and thermal chemical vapor deposition.[Chemical Designing and Proc. of High Tc Supercond., "Rep. Sci. Res. on Priority Area Ministry of Education", Ed. by Kazuo Fueki,(1992),171-176]T. Hirai, H. Yamane, H. Masumoto, T. Goto, M. Omori, K. Watanabe, N. Kobayashi
807.[O] Characteristics and evaluation of oxide mixed conductors.[溶接学会誌,61,(1992),66-67]T. Goto
808.[O] Crystal Growth, Dielectric and Polarization Reversal Properties of Bi[4]Ti[3]O[12] Single Crystal.[Japanese Journal of Applied Physics,31,(1992),3108-3112]Masuda Y., Masumoto H., Baba A., Goto T., Hirai T.
809.[O] Coating of Titanium Carbide Films on Stainless Steel by Chemical Vapor Deposition and Their Corrosion Behavior in a Br[2]-O[2]-Ar Atmosphere.[Journal of Materials Science,27,(1992),233-239]Goto T., Guo C.Y., Takeya H., Hirai T.
810.[O] Preferred Orientation of AlN Plates Prepared by Chemical Vapor Deposition of AlCl[3] + NH[3] System.[Journal of Materials Science,27,(1992),247-254]Goto T., Jun T., Kaya K., Hirai T.
811.[O] Preparation of SiB[4+-x] and SiB[6] Plates by Chemical Vapour Deposition of SiCl[4] + B[2]H[6] System.[Journal of Materials Science,27,(1992),255-262]Mukaida M., Goto T., Hirai T.
812.[O] Preferred orientation of TiB2 plates prepared by CVD of the TiCl4+B2H6 system.[Journal of Materials Science,26(24),(1991),6613-6617]M. Mukaida, T. Goto, T. Hirai
813.[O] High temperature active oxidation of chemically vapor-deposited silicon carbide in an Ar-O2 atmosphere.[Journal of the American Ceramic Society,74(10),(1991),2583-2586]Takayuki Narushima, Takashi Goto, Yasutaka Iguchi and Toshio Hirai
814.[O] Preparation of Bi4Ti3O12 films on a single-crystal sapphire substrate with electron cyclotron resonance plasma sputtering.[Applied Physics Letters,58(3),(1991),243-245]H. Masumoto, T. Goto, Y. Masuda, A. Baba and T. Hirai
815.[O] A.C. impedance and transport number measurements of Ba6Ta2O11.[Materials Research Society Symposium,210,(1991),669-674]T. Goto, A. R. West
816.[O] Bi4Ti3O12 films by ECR plasma spattering depositions.[八戸工業大学紀要,10,(1991),11-17]増田 陽一郎,馬場 明,増本 博,後藤 孝,平井 敏雄
817.[O] Preparation of Bi4Ti3O12 films by ECR plasma sputtering.[Mater. Res. Soc. Symp. Proc., Ed. by J. M. E. Harper, K. Miyake, J. R. McNeil and,223,(1991),283-288]H. Masumoto, T. Goto, Y. Masuda, A. Baba, T. Hirai
818.[O] Nano-structure control by heat treatment of Si3N4 -BN system amorphous ceramic nano composite thick films.[マツダ財団研究報告,2,(1991),117-125]T. Hirai, T. Goto
819.[O] Preparation and Dielectric and Electrooptic Properties of Bi[4]Ti[3]O[12] Films by Electron Cyclotron Resonance Plasma Sputtering Deposition.[Japanese Journal of Applied Physics,30,(1991),2212-2215]Masuda Y., Baba A., Masumoto H., Goto T., Minakata M., Hirai T.
820.[O] High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen at 1823 to 1923 K.[Journal of the American Ceramic Society,73(12),(1990),3580-3584]T. Narushima, T. Goto, Y. Iguchi, T. Hirai
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