Books, Original Papers & Review Papers- GOTO Takashi -
number of results to view: what to display: sort:
[B]:Books [O]:Original Papers [R]:Review Papers
total:871
[1994]
781.[O] Phase diagram and thermoelectric property of Si-B system ceramics.[J. Jpn. Soc. Powd. and Powd. Metallurgy,41(11),(1994),1299-1303]L. Chen, T. Goto, M. Mukaida, M. Niino, T. Hirai
782.[O] Active to Passive transition in the high-temperature oxidation of CVD SiC and Si3N4.[Corrosion of Advanced Ceramics,267,(1994),165-176]T. Goto, T. Narushima, Y. Iguchi, T. Hirai
783.[O] Preparation and Ferroelectric Properties of Bi[4]Ti[3]O[12] and Ba[2]NaNb[5]O[15] Films.[Ferroelectrics,152,(1994),115-120]Masuda Yoichiro., Masumoto Hiroshi., Baba Akira., Goto Takashi., Hirai Toshio.
784.[O] High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Nitride in a Carbon Monoxide-Carbon Dioxide Atmosphere.[Journal of the American Ceramic Society,77,(1994),2921-2925]Narushima Takayuki., Goto Takashi., Hagiwara Jun., Iguchi Yasutaka., Hirai Toshio.
785.[O] High-Temperature Active Oxidation and Active-to-Passive Transition of Chemically Vapor-Deposited Silicon Nitride in N[2]-O[2] and Ar-O[2] Atmospheres.[Journal of the American Ceramic Society,77,(1994),2369-2375]Narushima Takayuki., Goto Takashi., Yokoyama Yoshio., Hagiwara Jun., Iguchi Yasutaka., Hirai Toshio.
786.[O] Active-to-Passive Transition and Bubble Formation for High-Temperature Oxidation of Chemically Vapor-Deposited Silicon Carbide in CO-CO[2] Atmosphere.[Journal of the American Ceramic Society,77,(1994),1079-1082]Narushima Takayuki., Goto Takashi., Yokoyama Yoshio., Takeuchi Masahito., Iguchi Yasutaka., Hirai Toshio.
787.[O] Morphology and Preferred Orientation of Titanium Nitride Plates Prepared by Chemical Vapour Deposition.[Journal of Materials Science,29,(1994),669-675]Jiang C.C., Goto Takashi., Hirai Toshio.
788.[O] Preparation of Turbostratic and Cubic Boron-Nitride Films by Electron-Cyclotron-Resonance, Plasma-Assisted, Chemical Vapour Deposition.[J. Mater. Sci. Mater. Electron.,5,(1994),324-328]Goto Takashi., Tanaka Tomoaki., Masumoto Hiroshi., Hirai Toshio.
789.[O] Epitaxial Growth of Iridium and Platinum Films on Sapphire by Metalorganic Chemical Vapor Deposition.[Applied Physics Letters,65,(1994),1094-1096]Vargas Roberto., Goto Takashi., Zhang Wei., Hirai Toshio.
http://ir.library.tohoku.ac.jp/re/handle/10097/51709
790.[O] Preparation of Epitaxial AlN Films by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition on Ir- and Pt-Coated Sapphire Substrates.[Applied Physics Letters,64,(1994),1359-1361]Zhang Wei., Vargas Roberto., Goto Takashi., Someno Yoshihiro., Hirai Toshio.
http://ir.library.tohoku.ac.jp/re/handle/10097/51745
[1993]
791.[O] D. C. polarization of mixed conductor LaTa3O9.[J. Jpn. Soc. Powd. and Powd. Metallur.,40(7),(1993),701-704]T. Goto, A. R. West
792.[O] Tungsten-bronze Ba2NaNb5O15 and layer-structured Bi4Ti3O12 ferroelectric thin films.[Proc. 6th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Ed. by A. Safari, Hawaii, 1993,(1993),55-58]Y. Masuda, H. Masumoto, A. Baba, T. Goto, T. Hirai
793.[O] Prepation of Iridium and Platinum films by MOCVD and their properties.[Journal de Physique, IV.,C3(3),(1993),297-304]T. Goto, R. Vargas, T. Hirai
794.[O] Non-Stoichiometry of Titanium Nitride Plates Prepared by Chemical Vapour Deposition.[Journal of Alloys and Compounds,190,(1993),197-200]JIANG C.C., GOTO T., HIRAI T.
795.[O] Preparation of SiC-W[2]C Nano-Composite Powders by Chemical Vapour Deposition of the SiH[4]-CH[4]-WF[6]-H[2] System.[Journal of Materials Science,28,(1993),5543-5547]CHEN L., GOTO T., HIRAI T.
796.[O] Deposition Rates of Titanium Nitride Plates Prepared by Chemical Vapour Deposition of TiCl[4]+NH[3] System.[Journal of Materials Science,28,(1993),6446-6449]JIANG C.C., GOTO T., HIRAI T.
797.[O] Preparation of Ba[2]NaNb[5]O[15] Film by RF Magnetron Sputtering Method.[Japanese Journal of Applied Physics,32,(1993),4043-4047]MASUDA Y., MASUMOTO H., BABA A., GOTO T., HIRAI T.
798.[O] High-Temperature Active Oxidation of Chemically Vapor-Deposited Silicon-Carbide in Co-Co2 Atmosphere.[Journal of the American Ceramic Society,76,(1993),2521-2524]Narushima T., Goto T., Yokoyama Y., Iguchi Y., Hirai T.,
[1992]
799.[O] High-temperature oxidation of CVD-SiC in CO-CO2 atmosphere.["High Temperature Corrosion of Advanced Mater. and Protective Coatings", Ed. by Y.Saito, B. Onay and T. Maruyama,(1992),345-350]T. Narushima, T. Goto, Y. Iguchi, T. Hirai
800.[O] High-temperature active oxidation of CVD-Si3N4 in Ar-O2 atmosphere.[Solid State Ionics,53-56,(1992),256-259]T. Narushima, Y. Iguchi, T. Goto, T. Hirai, Y. Yokoyama
Page: [prev] [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [next]
BackTop
copyright(c)2005 Tohoku University