Books, Original Papers & Review Papers- GOTO Takashi -
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641.[O] Characterization of directionally solidified B4C-TiB2 composites prepared by a floating zone method.[Mater. Trans.,43(4),(2002),712-720]I. Gunjishima, T. Akashi, T. Goto
642.[O] Preparation and characteristics of piezoerectric/ion-conductor multi funcional film.[Materia Japan,41(3),(2002),174-177]MASUMOTO Hiroshi, TOHMA Tetsuro, GOTO Takashi
643.[O] Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC.[Corrosion Science,44,(2002),359-370]T. Goto, H. Homma, T. Hirai
644.[O] Thermoelectric properties of n-type BayNixCo4-xSb12.[Wuli Xuebao/Acta Physica Sinica,51(12),(2002),2823-]Tang, X.-F., Chen, L.-D., Goto, T., Hirai, T., Yuan, R.-Z.
645.[O] Thermoelectric properties of n-type BayNixCo4-xSb12 .[Acta Physica Sinica,51,(2002),2827-2828]X.-F. Tang, L.-D. Chen, T. Goto, T. Hirai and R.-Z. Yuan
646.[B] SiC Ceramics New Materials-Recent Developement-.[Uchida Roukakuho Publishing Co.,(2001)]T. Goto
647.[B] Advanced Technology of Nano-materials.[シー エム シー,(2001)]T. Goto
648.[B] Engneering of Thermoelectric Conversion -Basic and Application-.[Realize Co.,(2001)]T. Goto
649.[O] Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds.[Appl. Phys. Lett.,79,(2001),4165-4167]Shen Q., Chen L., Goto T., Hirai T., Yang J., Meisner GP., Uher C.,
650.[O] Electrochemical properties of iridium-carbon nano composite films prepared by MOCVD.[Scripta Mater.,44,(2001),1187-1190]T. Goto, T. Ono, T. Hirai
651.[O] Dielectric properties of Ba-Ti-O thin films prepared by MOCVD.[Proc. 2000 12th IEEE Int. Symp. Applications of Ferroelectrics (ISAF 2000),II,(2001),841-844]H. Masumoto, T. Tohma, T. Goto, T. Smirnova, Y. Masuda, T. Hirai
652.[O] GeSi single crystals as thermoelectric materials.[Proc.19th Inter. Conf. Thermoelectrics (ICT2000),(2001)]I. Yonenaga, T. Akashi, T. Goto, S. Yamaguchi
653.[O] Synthesis and thermoelectric properties of filled skutterudite compounds CeyFexCo4-xSb12 by solid state reaction.[J. Mater. Sci.,36,(2001),5435-5439]Tang XF., Chen LD., Goto T., Hirai T., Yuan RZ.,
654.[O] Synthesis of Dense Forms of B-C-N System Using Chemical-Vapor-Deposition/High-Pressure Process.[J. Mater. Sci.,36,(2001),679-684]Onodera A., Matsumoto K., Hirai Toshio, Goto Takashi, Motoyama M., Yamada K., Kohzuki H.
655.[O] High-Temperature Oxidation of CVD SiC in O2 and CO2 Atmospheres.[Materials at High Temperatuers,18(S),(2001),309-315]Goto Takashi, Homma Hisashi, Hirai Toshio
656.[O] Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method.[J. Mater. Sci. Lett.,20(24),(2001),2197-2199]Shen Q., Zhang LM., Chen LD., Goto T., Hirai T.
657.[O] High-temperature thermoelectric properties of n-type BayNixCo4-xSb12.[J. Mater. Res.,16,(2001),3343-3346]Tang XF., Zhang LM., Yuan RZ., Chen LD., Goto T., Hirai T., Dyck JS., Chen W., Uher C.,
658.[R] 金属との出会い、もの作りに思うこと.[アグネ技術センター 金属,71(12), (2001), 1196]後藤 孝
659.[O] Corosion Behavior of Glass Coated Hastelloy-XR in Boiling Sulfric Acid.[Mater. Trans. JIM,42(10),(2001),2093-2097]Rong Tu, Takashi Goto, Lidong Chen, Toshio Hirai, Lianmeng Zhang
660.[O] Phase Relationship in a BaO-Bi2O3-TiO2 System and Electrical Properties of BaTiO3 with Addition of Bi4Ti3O12.[Mater. Trans.,42(8),(2001),1823-1826]T. Akashi, K. Morita, T. Hirai, H. Yamane, T. Goto
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