Books, Original Papers & Review Papers- GOTO Takashi -
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[B]:Books [O]:Original Papers [R]:Review Papers
601.[O] Microstructure control of Al203/ZrO2 composite by fibrous monolithic process.[Mater. Trans.,45(2),(2004),431-434]T.-S. Kim, K.-H. Kim, T. Goto, B.-T. Lee
602.[R] 高速CVDプロセスの開発.[Chemical Engineering,49(2), (2004), 44-48]T. Goto
603.[B] Handbook of Advanced Ceramics Volume II Processing and their Applications (S. Somiya et al. (Eds), Elsevier Academic Press, U.S.A.).[(2003)]L.D. Chen, T. Goto
604.[O] Crystal structure and thermoelectric properties of the composite crystal [(Ca1-xSrx)2CoO3]pCoO2.[Proc. 21st International conference on thermoelectrics,(2003),226-229]Y. Miyazaki, T. Miura, Y. Ono, T. Akashi, T. Goto , T. Kajitani
605.[O] Application of Sr β-alumina solid electrolyte to a CO2 gas sensor.[Solid State Ionics,156,(2003),329-336]T. Goto, G. He, T. Narushima, Y. Iguchi
606.[O] Characterization of directionally solidified B4C-TiB2 andB4C-SiC eutectic comosites prepared by a floating-zone method.[Key Eng. Mater.,247,(2003),209-212]T. Akashi, I. Gunjishima, T. Goto
607.[O] Electrical conductivity of non-stoichometric Sr β-alumina single crystals prepared by a floating zone method.[Solid State Ionics,156,(2003),425-431]A.Y. Zhang, T. Akashi, T. Goto
608.[O] Anisotropy of electrical conductivity for alkaline earth beta-alumina single crystals prepared by a floating zone method.[Solid State Ionics,156,(2003),349-355]A.Y. Zhang, T. Akashi, T. Goto
609.[O] Preparation of hydrogenated amorphous silicon by ECR plasma sputtering and the effect on retinoic acid and membrane protein polypeptides.[Thin Solid Films,438-439,(2003),90-96]Y. Tsujiuchi, J. Suto, K. Goto, S. Shibata, T. Ishimaru, M. Ihara, H. Masumoto, T. Goto
610.[O] Corrsion test on structural materials for iodine-sulfur thermochemical water splitting cycle.[Proc. AICHE 2003 Spring National Meeting,(2003)]S. Kubo, M. Futakawa, I. Ioka, K. Onuki, S. Shimizu, K. Ohsaka, A. Yamaguchi, R. Tsukada, T. Goto
611.[O] Characterization of directionally solidified B4C-TiB2 and B4C-SiC eutectic composites prepared by floating-zone method.[Key Eng. Mater.,247,(2003),209-212]T. Akashi, I. Gunjishima, T. Goto
612.[O] Synthesis and sintering of ZrNiSn-based half-Heusler compounds.[J. Mater. Sci. Technol.,19,(2003),511-512]Q. Shen, LM. Zhang, LD. Chen, T. Goto, T. Hirai,
613.[O] Transport of lanthanum ion and hole in LaCrO3 determined by electrical conductivity measurements.[Solid State Ionics,164,(2003),177-183]T. Akashi, T. Maruyama, T. Goto
614.[O] Wet oxidation of slisicon carbide and silicon nitride.[Met. Mater. Processes,15(1-2),(2003),177-186]T. Narushima, T. Goto, C. Ouchi, Y. Iguchi
615.[B] Ecomaterials (Kogyo Chosakai Publishing Co., Ltd, Tokyo).[工業調査会,(2003)]GOTO Takashi
616.[O] Dielectric proerties of Ba(Ti0.85Zr0.15)03 film prepared by metalorganic chemical vapor deposition.[Jpn. J. Appl. Phys.,12(11),(2003),6969-6972]T. Tohma, H. Masumoto and T. Goto
617.[O] A ferroelectric barium titanate, BaTi2O5.[Acta Cryst. C,c59,(2003),i128-i130]T. Kimura, T. Goto, H. Yamane, H. Iwata, T. Kajiwara, T. Akashi
618.[B] Development and Technology of Functionally Graded Materials.[CMC Publishing Co. Ltd.,(2003)]GOTO Takashi, MIYAZAKI Hidetoshi
619.[B] Ceramic Data Book 2003 (Technoplaza, Tokyo).[(2003)]T. Goto
620.[O] Chemical vapor deposition of iridium, platinum, rhodium and palladium.[Mater. Trans.,44(9),(2003),1717-1728]J. R. Vargas Garcia, T. Goto
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