Original Papers- SATO Hideo -
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[2019]
1.Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction.[IEEE Transactions on Magnetics,55,(2019)]Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Mitsuo Yasuhira, Tetsuo Endoh
10.1109/TMAG.2019.2897067
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2.Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions.[IEEE Transactions on Magnetics,55,(2019)]S. Miura, T. V.A. Nguyen, Y. Endoh, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, T. Endoh
10.1109/TMAG.2019.2901841
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3.Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm.[Digest of Technical Papers - Symposium on VLSI Technology,2019-June,(2019)]K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, T. Endoh
10.23919/VLSIT.2019.8776499
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4.12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz.[Digest of Technical Papers - IEEE International Solid-State Circuits Conference,2019-February,(2019),202-204]Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
10.1109/ISSCC.2019.8662431
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5.Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W <inf>100-x</inf> Ta <inf>x</inf> /CoFeB systems.[Applied Physics Express,12,(2019)]Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Hideo Sato, Tetsuo Endoh
10.7567/1882-0786/ab1a66
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6.14ns write speed 128Mb density Embedded STT-MRAM with endurance&gt;10 <sup>10</sup> and 10yrs retention@85°C using novel low damage MTJ integration process.[Technical Digest - International Electron Devices Meeting, IEDM,2018-December,(2019)]H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, S. Ikeda, S. Y. Kang, T. Kubo, K. Yamashita, Y. Yagi, R. Tamura, T. Endoh
10.1109/IEDM.2018.8614606
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[2018]
7.Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions.[Nature Communications,9,(2018)]K. Watanabe, B. Jinnai, S. Fukami, S. Fukami, S. Fukami, S. Fukami, H. Sato, H. Sato, H. Sato, H. Sato, H. Ohno, H. Ohno, H. Ohno, H. Ohno, H. Ohno
10.1038/s41467-018-03003-7
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8.Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations.[Physical Review B,98,(2018)]H. Sato, P. Chureemart, F. Matsukura, R. W. Chantrell, H. Ohno, R. F.L. Evans
10.1103/PhysRevB.98.214428
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9.Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires.[Applied Physics Letters,113,(2018)]Butsurin Jinnai, Hideo Sato, Shunsuke Fukami, Hideo Ohno
10.1063/1.5045814
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10.An effect of capping-layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/capping-layer structure.[Applied Physics Letters,113,(2018)]M. Bersweiler, E. C.I. Enobio, S. Fukami, H. Sato, H. Ohno
10.1063/1.5050486
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11.1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning.[2018 IEEE 10th International Memory Workshop, IMW 2018,(2018),1-4]Hideo Sato, Toshinari Watanabe, Hiroki Koike, Takashi Saito, Sadahiko Miura, Hiroaki Honjo, Hirofumi Inoue, Shoji Ikeda, Yasuo Noguchi, Takaho Tanigawa, Mitsuo Yasuhira, Hideo Ohno, Song Yun Kang, Takuya Kubo, Koichi Takatsuki, Koji Yamashita, Yasushi Yagi, Ryo Tamura, Takuro Nishimura, Koh Murata, Tetsuo Endoh
10.1109/IMW.2018.8388774
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12.Spin-orbit torques in high-resistivity-W/CoFeB/MgO.[Applied Physics Letters,112,(2018)]Yutaro Takeuchi, Chaoliang Zhang, Chaoliang Zhang, Chaoliang Zhang, Atsushi Okada, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Sato, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno
10.1063/1.5027855
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13.Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis.[Applied Physics Letters,112,(2018)]N. Ichikawa, T. Dohi, A. Okada, H. Sato, H. Sato, H. Sato, H. Sato, S. Fukami, S. Fukami, S. Fukami, S. Fukami, S. Fukami, H. Ohno, H. Ohno, H. Ohno, H. Ohno, H. Ohno
10.1063/1.5035487
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14.Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions.[Applied Physics Express,11,(2018)]Motoya Shinozaki, Junta Igarashi, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno
10.7567/APEX.11.043001
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15.Time and spatial evolution of spin-orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes.[Japanese Journal of Applied Physics,57,(2018)]Chaoliang Zhang, Chaoliang Zhang, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Samik Dutta Gupta, Samik Dutta Gupta, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno
10.7567/JJAP.57.04FN02
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16.Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement.[Japanese Journal of Applied Physics,57,(2018)]Eli Christopher Inocencio Enobio, Eli Christopher Inocencio Enobio, Mathias Bersweiler, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Sato, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno
10.7567/JJAP.57.04FN08
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17.Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance.[Applied Physics Letters,112,(2018)]Atsushi Okada, Shun Kanai, Shun Kanai, Shun Kanai, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno
10.1063/1.5026418
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[2017]
18.Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction with CoFeB/W/CoFeB Free Layer.[IEEE Transactions on Magnetics,53,(2017)]H. Honjo, H. Honjo, S. Ikeda, S. Ikeda, S. Ikeda, S. Ikeda, H. Sato, H. Sato, H. Sato, H. Sato, K. Nishioka, K. Nishioka, T. Watanabe, T. Watanabe, S. Miura, S. Miura, T. Nasuno, T. Nasuno, Y. Noguchi, Y. Noguchi, M. Yasuhira, M. Yasuhira, T. Tanigawa, T. Tanigawa, H. Koike, H. Koike, H. Inoue, H. Inoue, M. Muraguchi, M. Muraguchi, M. Muraguchi, M. Niwa, M. Niwa, H. Ohno, H. Ohno, H. Ohno, H. Ohno, H. Ohno, T. Endoh, T. Endoh, T. Endoh, T. Endoh, T. Endoh
10.1109/TMAG.2017.2701838
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19.Magnetic and Free-layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition.[IEEE Magnetics Letters,8,(2017)]Mathias Bersweiler, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno
10.1109/lMAG.2017.2748929
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20.Spin-orbit torque induced magnetization switching in Co/Pt multilayers.[Applied Physics Letters,111,(2017)]Butsurin Jinnai, Chaoliang Zhang, Chaoliang Zhang, Aleksandr Kurenkov, Mathias Bersweiler, Hideo Sato, Hideo Sato, Hideo Sato, Hideo Sato, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Shunsuke Fukami, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno, Hideo Ohno
10.1063/1.5001171
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