Original Papers- SAITO Yoshiaki -
number of results to view: what to display: sort:
total:168
[2012]
61.Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon.[IEEE International magnetic conference, 2012,(2012)]M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, and Y. Saito
62.Spin injection and detection between CoFe/AlO x junctions and SOI investigated by Hanle effect measurements.[J. Appl. Phys.,111,(2012),07C316-1-07C316-3]T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, N. Tezuka
10.1063/1.3677930
63.Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices.[IEEE International magnetic conference, 2012,(2012)]Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka
[2011]
64.Spin injection and detection between CoFe/AlOx junctions and SOI investigates by Hanle effect measurements.[56th Annual Conference on Magnetism & Magnetic Materials ( 2011 MMM Conference),(2011)]T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, N. Tezuka
65.Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (vol 109, 07C312, 2011).[JOURNAL OF APPLIED PHYSICS,110(5),(2011)]Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Kazutaka Ikegami, Yoshiaki Saito
10.1063/1.3633243
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000294968600174&DestApp=WOS
66.Spin injection, transport, and read/write operation in spin-based MOSFET.[Thin Solid Films,519,(2011),8266-8273]Y. Saito, T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto
10.1016/j.tsf.2011.03.073
67.Spin-based MOSFET and its applications.[J. Electrochemical Soc.,158,(2011),H1068-H1076]Y. Saito, T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto
10.1149/1.3623420
68.Effect of bias voltage and interdiffusion in Ir-Mn exchange-biased double tunnel junctions.[IEEE International Magnetics Conference (Intermag 2001),(2011)]Y. Saito, M. Amano, K. Nakajima, S. Takahashi, M. Sagoi, K. Inomata
69.Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor.[J. Appl. Phys.,109,(2011),07C312-1-07C312-3]T. Tanamoto, H. Sugiyama, T. Inokuchi, T. Marukame, M. Ishikawa, K. Ikegami, Y. Saito
10.1063/1.3537923
70.Spin-based MOSFET and Its Applications.[Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor III (ULSI vs. TFT 3),(2011)]Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, T. Tanamoto
71.Spin-based MOSFET: a promising candidate for beyond CMOS device using nanotechnology.[he Seventh International Nanotechnology Conference on Communication and Cooperation (INC7),(2011)]Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto
[2010]
72.Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET.[55th Annual Conference on Magnetism & Magnetic Materials (2010 MMM Conference),(2010)]T. Tanamoto, H. Sugiyama, T. Inokuchi, T.Marukame, S. Ishikawa, K. Ikegami and Y. Saito
73.Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits.[2010 Symp. on VLSI Technology,(2010),119-120]T. Inokuchi, T. Marukame, T. Tanamoto, H. Sugiyama, M. Ishikawa, Y. Saito
10.1109/VLSIT.2010.5556194
74.Anisotropic Josephson-vortex dynamics in layered organic superconductors.[Physica B,405(11 S),(2010),S288-S290]Yasuzuka, S. Uji, S. Satsukawa, H. Kimata, M. Terashima, T. Koga, H. Yamamura, Y. Saito, K. Akutsu, H. Yamada, J
10.1016/j.physb.2009.11.017
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000283808400084&DestApp=WOS
75.Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices.[2009 IEEE International Electron Devices Meeting,(2010),9.2.1-9.2.4]T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito
10.1109/IEDM.2009.5424385
76.Spin injection, Transport, and Read/Write operation in spin-based MOSFET.[International Conference of Asian Union of Magnetics Societies (ICAUMS),(2010)]Y. Saito, T. Marukame, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto
77.Read/Write operation of spin-based MOSFET and the related phenomena.[The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI),(2010)]Y. Saito, T. Marukame, M. Ishikawa, T. Inokuchi, H. Sugiyama
[2009]
78.Current-dependent linewidth of a spin-transfer nano-oscillator.[J. Magn. Magn. Mater.,321,(2009),990-995]R. Sato, Y. Saito, K. Mizushima
10.1016/j.jmmm.2008.03.011
79.Decrease of nonlinearity and linewidth narrowing in spin-transfer oscillators under the external field applied near the hard axis.[Appl. Phys. Lett.,94,(2009),152501-1-152501-3]K. Mizushima, T. Nagasawa, K. Kudo, Y. Saito, and R. Sato
10.1063/1.3111435
80.Electrical Spin Injection into n-GaAs Channels and Detection through MgO/CoFeB Electrodes.[Appl. Phys. Express,2,(2009),023006-1-023006-3]T. Inokuchi, T. Marukame, M. Ishikawa, H. Sugiyama, and Y. Saito
10.1143/APEX.2.023006
Pageļ¼š [prev] [1] [2] [3] [4] [5] [6] [7] [8] [9] [next]
BackTop
copyright(c)2005 Tohoku University