Original Papers- SAITO Yoshiaki -
number of results to view: what to display: sort:
total:161
[2014]
41.Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/SOI lateral spin valves.[J. Appl. Phys.,115,(2014),17C514-1-17C514-3]Y. Saito, , T. Tanamoto, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka
10.1063/1.4866699
42.Spin injection, detection and local magnetoresistance through Si at room temperature in ferrmagnet/MgO/Si lateral spin valves.[IEEE International nanoelectronics conference, 2014 (IEEE INEC 2014),(2014)]Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, N. Tezuka, K. Hamaya
[2013]
43.Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices.[J. Appl. Phys.,114,(2013),243904-1-243904-6]M. Ishikawa, H. Sugiyama, T. Inokuchi, T. Tanamoto, K. Hamaya, N. Tezuka, and Y. Saito
10.1063/1.4856955
44.Local magnetoresistance through Si at room temperature and its bias voltage dependence in CoFe/MgO/SOI lateral spin valves.[58th Annual Conference on Magnetism and Magnetic Materials (2013 MMM Conference),(2013),HB-04-]Y. Saito, T. Tanamoto, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka
45.Inelastic electron tunneling spectroscopy study of CoFe/MgO/n+-Si junctions.[58th Annual Conference on Magnetism and Magnetic Materials (2013 MMM Conference),(2013),AX-06-]T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto, Y. Saito
46.Correlation between the intensities of differential conductance curves and the spin accumulation signals in Si for CoFe/MgO/SOI devices.[International conference on solid state devices and materials (SSDM2013),(2013)]M. Ishikawa, T. Inokuchi, H. Sugiyama, K. Hamaya, N. Tezuka, and Y. Saito
47.Effects of interface electric field on the magnetoresistance in spin transistor.[International conference on solid state devices and materials (SSDM2013),(2013)]T. Tanamoto, M. Ishikawa, T. Inokuchi, H. Sugiyama, and Y. Saito
48.Crystal Structures and Spin Injection Signals of Si/Mg/MgO/Co2FeAl0.5Si0.5 Junctions.[Mater. Trans.,54,(2013),1392-1395]T. Onodera, M. Yoshida, N. Tezuka, M. Matsuura, S. Sugimoto, and Y. Saito
10.2320/matertrans.M2013139
49.Fabrication of (001)-oriented MgO thin filins on si substrates.[Journal of the Japan Institute of Metals,77,(2013),89-93]T. Onodera, M. Yoshida, N. Tezuka, S. Sugimoto, Y. Saito
10.2320/jinstmet.77.89
50.Crystal Structure and Spin Conduction Property of Co2FeAl0.5Si0.5 Full-Heusler Alloy Thin Films Deposited on Si Substrates.[Journal of the Japan Institute of Metals,77,(2013),85-88]M. Yoshida, T. Onodera, N. Tezuka, S. Sugimoto, Y. Saito
10.2320/jinstmet.77.85
51.Effects of interface resistance asymmetry on local and non-local magnetoresistance structures.[Jap. J. Appl. Phys.,52,(2013),04CM03-1-04CM03-5]T. Tanamoto, H. Sugiyama, T. Inokuchi, M. Ishikawa, Y. Saito
10.7567/JJAP.52.04CM03
52.Spin accumulation in Si for CoFe/MgO/Mg/Si-on-insulator devices.[Joint MMM/Intermag Conference, 2013,(2013)]H. Sugiyama, M. Ishikawa, T. Inokuchi, H. T. Tanamoto, K. Hamaya, Y. Saito, N. Tezuka
53.A Reconfigurable Architecture based on spin MOSFET.[Trends in nanotechnology (TNT2013),(2013)]T. Tanamoto, H. Sugiyama, T. Inokuchi, M. Ishikawa, and Y. Saito
[2012]
54.Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices.[IEEE Tran. Magn.,48,(2012),2739-2744]Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka
10.1109/TMAG.2012.2202277
55.Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/MgO/SOI devices.[International conference on Solid State Devices and Materials (SSDM2012),(2012)]M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka, Y. Saito
56.Effects of interface resistance asymmetry on local and non-local magnetoresistance structures.[International conference on Solid State Devices and Materials (SSDM2012),(2012)]T. Tanamoto, H. Sugiyama, T. Inokuchi, M. Ishikawa, Y. Saito
57.Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon.[Appl. Phys. Lett.,100,(2012),252404-1-252404-4]M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, Y. Saito
10.1063/1.4728117
58.Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon.[IEEE International magnetic conference, 2012,(2012)]M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, and Y. Saito
59.Spin injection and detection between CoFe/AlO x junctions and SOI investigated by Hanle effect measurements.[J. Appl. Phys.,111,(2012),07C316-1-07C316-3]T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, N. Tezuka
10.1063/1.3677930
60.Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices.[IEEE International magnetic conference, 2012,(2012)]Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka
Pageļ¼š [prev] [1] [2] [3] [4] [5] [6] [7] [8] [9] [next]
BackTop
copyright(c)2005 Tohoku University