Original Papers- SAITO Yoshiaki -
number of results to view: what to display: sort:
total:168
[2017]
21.Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer.[AIP Advances,7,(2017),055937-1-055937-6]Y. Saito, T. Inokuchi, M. Ishikawa, A. Tiwari, H. Sugiyama
10.1063/1.4978583
22.Spin relaxation through the lateral spin transport in heavily doped n-type silicon.[Phys. Rev.,B95,(2017),115302-1-115302-6]M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, and K. Hamaya
10.1103/PhysRevB.95.115302
23.Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si.[Jpn. J. Appl. Phys.,56,(2017),04CD05-1-04CD05-5]A. Tiwari, T. Inokuchi, M. Ishikawa, H. Sugiyama, N. Tezuka and Y. Saito
10.7567/JJAP.56.04CD05
[2016]
24.Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density.[2016 IEEE International Electron Devices Meeting,(2016),27.6.1-27.6.4]H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami and A. Kurobe
10.1109/IEDM.2016.7838495
25.Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer.[61th annual Magnetism & Magnetic Materials Conference (MMM2016),(2016)]Y. Saito, T. Inokuchi, M. Ishikawa, A. Tiwari, H. Sugiyama
26.Room temperature observation of large spin accumulation and transport signals in post annealed Co2FeSi/MgO/n+-Si on insulator devices.[2016 International conference on solid state devices and materials (SSDM 2016),(2016)]A. Tiwari, T. Inokuchi, M. Ishikawa, H. Sugiyama, N. Tezuka and Y. Saito
27.Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator devices.[AIP Advances,6,(2016),075119-1-075119-9]A. Tiwari, T. Inokuchi, M. Ishikawa, H. Sugiyama, N. Tezuka and Y. Saito
10.1063/1.4960210
28.Spin-dependent transport mechanisms in CoFe/MgO/n+-Si junctions investigated by frequency response of signals.[Appl. Phys. Express.,9,(2016),073002-1-073002-4]T. Inokuchi, M. Ishikawa, H. Sugiyama, and Y. Saito
10.7567/APEX.9.073002
29.Spin injection, transport, and detection in a lateral spin transport devices with Co2FeAl0.5Si0.5/n-GaAs, Co2FeSi/MgO/n-Si, and CoFe/MgO/n-Si junctions.[Materila Transactions,57,(2016),767-772]N. Tezuka, Y. Saito
10.2320/matertrans.ME201502
30.Spin accumulation signals in CoFe/MgO/n+-Si devices deposited on Si (1×1) and Si (2×1) surfaces.[Joint MMM/Intermag Conference, 2016,(2016)]Yoshiaki Saito, Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Kohei Hamaya, Nobuki Tezuka
[2015]
31.Influence of Si surface on spin accumulation and transport signals in CoFe/MgO/n+-Si junctions.[2015 International conference on solid state devices and materials (SSDM 2015),(2015)]Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Nobuki Tezuka, Kohei Hamaya, Yoshiaki Saito
32.Spin transport and accumulation in n+-Si using Heusler compound Co2FeSi/MgO tunnel contacts.[Appl. Phys. Lett.,107,(2015),092402-1-092402-5]M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, and Y. Saito
10.1063/1.4929888
33.Influence of miniaturization of the CoFe/MgO/n+-Si devices on magnitude of magnetoresistance.[International Colloquium on Magnetic Films and Surfaces 2015 (ICMFS 2015),(2015)]Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito, Nobuki Tezuka
34.Spin accumulation and transport signals in Heusler Co2FeSi/MgO/n+-Si on insulator devices.[20th International conference on Magnetism (ICM 2015),(2015)]Yoshiaki Saito, Mizue Ishikawa, Tomoaki Inokuchi, Hideyuki Sugiyama, Kohei Hamaya, Nobuki Tezuka
35.Dependence of spin-dependent transport signals on measurement frequency in CoFe/MgO/n+-Si junctions.[IEEE International magnetic conference 2015 (Intermag 2015),(2015),GP-09-]Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito
36.Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions.[J. Appl. Phys.,117,(2015),17C707-01-17C707-04]Y. Saito, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka
10.1063/1.4907242
37.Ferromagnet/tunnel barrier/n+-Si junction technology for spin-FETs.[International Workshop on Junction Technology 2015 (IWJT 2015),(2015)]Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama
[2014]
38.Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n+-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy.[Appl. Phys. Lett.,105,(2014),232401-1-232401-4]T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto, and Y. Saito
10.1063/1.4903478
39.Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions.[59th annual Magnetism & Magnetic Materials Conference (MMM2014),(2014)]Yoshiaki Saito, Mizue Ishikawa, Tetsufumi Tanamoto, Tomoaki Inokuchi, Hideyuki Sugiyama, Kohei Hamaya, Nobuki Tezuka
40.Influence of interface roughness in CoFe/MgO/n+-Si junctions on spin accumulation and spin transport signals.[59th annual Magnetism & Magnetic Materials Conference (MMM2014),(2014)]Mizue Ishikawa, Hideyuki Sugiyama, Tomoaki Inokuchi, Tetsufumi Tanamoto, Kohei Hamaya, Nobuki Tezuka and Yoshiaki Saito
Page: [prev] [1] [2] [3] [4] [5] [6] [7] [8] [9] [next]
BackTop
copyright(c)2005 Tohoku University