Original Papers- SAITO Yoshiaki -
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total:168
[2020]
1.Study of spin transport and magnetoresistance effect in silicon-based lateral spin devices for spi -MOSFET applications.[J. Magn. Soc. Jpn,44,(2020),56-63]M. Ishikawa, Y. Saito, and K. Hamaya
10.3379/msjmag.2005RV002
2.Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system.[Appl. Phys. Lett.,116,(2020),132401-1-132401-5]Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, and Tetsuo Endoh
10.1063/5.0002642
[2019]
3.Spin Hall effect investigated by spin Hall magnetoresistance in Pt100−xAux/CoFeB systems.[AIP Advances,9,(2019),125312-1-125312-5]SAITO Yoshiaki
10.1063/1.5129889
4.Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W100-xTax/CoFeB systems.[Appl. Phys. Exp.,12,(2019),053008-1-053008-6]Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Hideo Sato, Tetsuo Endoh
10.7567/1882-0786/ab1a66
[2018]
5.Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve device.[J. Phys. D: Appl. Phys.,52,(2018),085102-1-085102-8]M. Ishikawa, M. Tsukahara, S. Honda, Y. Fujita, M. Yamada, Y. Saito, T. Kimura, H. Itoh, K. Hamaya
10.1088/1361-6463/aaf37c
6.Local Magnetoresistance at Room Temperature in Si<100> Devices.[IEEE Trans. Magn.,54(11),(2018),1400604-1-1400604-4]M. Ishikawa, M. Tsukahara, M. Yamada, Y. Saito and K. Hamaya
10.1109/TMAG.2018.2849753
7.Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta-B Spin Hall Electrode.[Phys. Rev. Appl.,10,(2018),044011-1-044011-11]SAITO Yoshiaki
10.1103/PhysRevApplied.10.044011
8.Giant voltage-controlled magnetuc anisotropy effect in a crystallographically strained CoFe system.[Appl. Phys. Exp.,11,(2018),053007-1-053007-5]Y. Kato, H. Yoda, Y. Saito,S. Oikaw, K. Fujii, M. Yoshiki, K. Koi, H. Sugiyama, M.Ishikawa, T. Inokuchi, N. Shimomura, M. SHimizu, S. SHirotori, B. Altansargai, Y. Ohsawa, K. Ikegami, A. Tiwari, A. Kurobe
10.7567/APEX.11.053007
9.Reliable Estimation of TaB Spin Hall Angle by Incorporating the Interfacial Transparency and Isolating Inverse Spin Hall Effect in ST-FMR Analysis.[IEEE International magnetic conference 2018 (Intermag 2018),ED-07,(2018)]A. Tiwari, H. Yoda, Y. Kato, K. Koi, M. Ishikawa, S. Oikawa, Y. Saito, T. Inokuchi, N. Shimomura, M. Shimizu, S. Shirotori, B. Altansargai, H. Sugiyama, Y. Ohsawa and A. Kurobe
[2017]
10.Giant voltage-control-magnetic-anisotropy (VCMA) effect in crystallographic strained CoFe system.[Proceedings of 62th annual Magnetism & Magnetic Materials Conference (MMM2017),(2017)]Y. Kato, Y. Saito, H. Yoda, N. Shimomura, S. Shirotori, S. Oikawa, M. Ishikawa, T. Inokuchi, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, Y. Ohsawa, K. Ikegami, Y. Kamiguchi, A. Tiwari, and A. Kurobe
11.Radical improvement of write efficiency in Voltage Control Spintronics Memory (VoCSM) by development of TaB Spin-Hall electrode.[62th annual Magnetism & Magnetic Materials Conference (MMM2017),(2017)]Y. Kato, Y. Saito, H. Yoda, N. Shimomura, S. Shirotori, S. Oikawa, M. Ishikawa, T. Inokuchi, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, Y. Ohsawa, K. Ikegami, Y. Kamiguchi, A. Tiwari, and A. Kurobe
12.Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency.[Proceedings of 2017 International conference on solid state devices and materials (SSDM 2017),(2017)]M. Shimizu, H. Yoda, S. Shirotori, N. Shimomura, Y. Ohsawa, T. Inokuchi, K. Koi, Y. Kato, S. Oikawa, H. Sugiyama, B. Altansargai, M. Ishikawa, K. Ikegami, Y. Kamiguchi, Y. Saito and A. Kurobe
13.Switching mechanism design for high-speed Voltage-Control Spintronics Memory (VoCSM) considering the operation window.[roceedings of 2017 International conference on solid state devices and materials (SSDM 2017),(2017)]K. Koi, H. Yoda, N. Shimomura, T. Inokuchi ,Y. Kato, A. Buyandalai, S. Shirotori, Y. Kamiguchi, K. Ikegami, S. Oikawa, H. Sugiyama, M. Shimizu, M. Ishikawa, T. Ajay, Y. Ohsawa, Y. Saito , and A. Kurobe
14.High-speed voltage-control spintronics memory focused on reduction in write-current.[Proceedings of Non-Volatile Memory Technology Symposium 2017 (NIVNST2017),(2017)]H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, Y. Kamiguchi, N. Shimomura, Y. Saito, and A. Kurobe
15.Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height.[Appl. Phys. Lett.,110,(2017),252404-1-252404-4]T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, A. Buyandalai, A. Tiwari, Y. Ohsawa, Y. Saito, and A. Kurobe
10.1063/1.4986923
16.Spin relaxation mechanism in heavily doped n-type silicon.[Spintech IX,(2017)]M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, and K. Hamaya
17.High-speed voltage-control spintronics memory (High-Speed VoCSM).[2017 IEEE 9th International Memory Workshop,7939085,(2017),1-4]H. Yoda, H. Sugiyama, T. Inokuchi, Y. Kato, Y. Ohsawa, K. Abe, N. Shimomura, Y. Saito, S. Shirotori, K. Koi, B. Altansargai, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami Y. Kamiguchi, S. Fujita, A. Kurobe
10.1109/IMW.2017.7939085
18.Voltage-Control Spintronics Memory (VoCSM) with a self-aligned heavy-metal electrode.[IEEE International magnetic conference 2017 (Intermag 2017),(2017)]S. Shirotori, H. Yoda, Y. Ohsawa, N. Shimomura, T. Inokuchi, Y. Kato, Y. Kamiguchi, K. Koi, K. Ikegami, H. Sugiyama, M. Shimizu, A. Buyandalai, S. Oikawa,M. Ishikawa, T. Ajay, Y. Saito, A. Kurobe
19.Magnetoresistance ratio through Si semiconductor using a magnetic tunnel junction.[IEEE International magnetic conference 2017 (Intermag 2017),(2017),CN-13-]N. Tezuka, S. Oikawa, M. Matsuura, S. Sugimoto and Y. Saito
20.Voltage-Control Spintronics Memory (VoCSM) with a self-aligned heavy-metal electrod.[IEEE Tran. Magn.,53,(2017),252404-1-252404-4]S. Shirotori, H. Yoda, Y. Ohsawa, N. Shimomura, T. Inokuchi, Y. Kato, Y. Kamiguchi, K. Koi, K. Ikegami, H. Sugiyama, M. Shimizu, B. Altansargai, S. Oikawa, M. Ishikawa, A. Tiwari, Y. Saito, and A. Kurobe
10.1109/TMAG.2017.2691764
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