Original Papers- FUJIWARA Kohei -
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[2016]
21.Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric.[Appl. Phys. Lett.,119(5),(2016),034502-]T. Wei, T. Kanki, K. Fujiwara, M. Chikanari, and H. Tanaka
10.1063/1.4941233
22.Impact of parylene-C thickness on performance of KTaO3 field-effect transistors with high-k oxide/parylene-C hybrid gate dielectric.[J. Appl. Phys.,119(3),(2016),034502-]T. Wei, K. Fujiwara, T. Kanki, and H. Tanaka
10.1063/1.4940387
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000369287900016&DestApp=WOS
[2015]
23.Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films.[Appl. Phys. Express,8(7),(2015),073201-]T. Nakamura, A. N. Hattori, T. V. A. Nguyen, K. Fujiwara, and H. Tanaka
10.7567/APEX.8.073201
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000358480000021&DestApp=WOS
24.Identification of Giant Mott Phase Transition of Single Electric Nanodomain in Manganite Nanowall Wire.[Nano Lett.,15(7),(2015),4322-4328]A. N. Hattori, Y. Fujiwara, K. Fujiwara, T. V. A. Nguyen, T. Nakamura, M. Ichimiya, M. Ashida, and H. Tanaka
10.1021/acs.nanolett.5b00264
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000357964100013&DestApp=WOS
25.3D-Architected and Integrated Metal Oxide Nanostructures and Beyond Produced by Three-Dimensional Nanotemplate Pulsed Laser Deposition.[e-J. Surf. Sci. Nanotec.,13,(2015),279-283]A. N. Hattori, Y. Fujiwara, K. Fujiwara, and H. Tanaka
10.1380/ejssnt.2015.279
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000370710000062&DestApp=WOS
[2014]
26.Estimation of dc transport dynamics in strongly correlated (La,Pr,Ca)MnO3 film using an insulator-metal composite model for terahertz conductivity.[Appl. Phys. Lett.,105(2),(2014),023502-]T. V. A. Nguyen, A. N. Hattori, M. Nagai, T. Nakamura, K. Fujiwara, M. Ashida, and H. Tanaka
10.1063/1.4890109
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000341151400074&DestApp=WOS
27.Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.[Sci Rep,4,(2014),5818-]T. Ichimura, K. Fujiwara, and H. Tanaka
10.1038/srep05818
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000339420700003&DestApp=WOS
28.Electrical switching to probe complex phases in a frustrated manganite.[Solid State Commun.,187,(2014),64-67]S. Asthana, K. Fujiwara, and H. Tanaka
10.1016/j.ssc.2014.02.014
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000335313700014&DestApp=WOS
29.Nonvolatile Transport States in Ferrite Thin Films Induced by Field-Effect Involving Redox Processes.[Adv. Mater. Interfaces,1(3),(2014),1300108-]K. Fujiwara, T. Ichimura, and H. Tanaka
10.1002/admi.201300108
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30.Artificial three dimensional oxide nanostructures for high performance correlated oxide nanoelectronics.[Jpn. J. Appl. Phys.,53(5 1),(2014),05FA10-]H. Tanaka, H. Takami, T. Kanki, A. N. Hattori, and K. Fujiwara
10.7567/JJAP.53.05FA10
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000338316200011&DestApp=WOS
31.Fabrication of three-dimensional epitaxial (Fe,Zn)3O4 nanowall wire structures and their transport properties.[Appl. Phys. Express,7(4),(2014),045201-]A. N. Hattori, Y. Fujiwara, K. Fujiwara, Y. Murakami, D. Shindo, and H. Tanaka
10.7567/APEX.7.045201
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000336118100021&DestApp=WOS
[2013]
32.5d iridium oxide as a material for spin-current detection.[Nat. Commun.,4,(2013),2893-]K. Fujiwara, Y. Fukuma, J. Matsuno, H. Idzuchi, Y. Niimi, Y. Otani, and H. Takagi
10.1038/ncomms3893
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000329396200011&DestApp=WOS
33.Observation of rebirth of metallic paths during resistance switching of metal nanowire.[Appl. Phys. Lett.,103(19),(2013),193114-]K. Horiba, K. Fujiwara, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, and H. Takagi
10.1063/1.4829469
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000327817000073&DestApp=WOS
34.Unstrained Epitaxial Zn-Substituted Fe3O4 Films for Ferromagnetic Field-Effect Transistors.[Jpn. J. Appl. Phys.,52(6 1),(2013),UNSP 068002-]T. Ichimura, K. Fujiwara, T. Kushizaki, T. Kanki, and H. Tanaka
10.7567/JJAP.52.068002
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000319998200042&DestApp=WOS
35.Electric-field breakdown of the insulating charge-ordered state in LuFe2O4 thin films.[J. Phys. D: Appl. Phys.,46(15),(2013),155108-]K. Fujiwara, T. Hori, and H. Tanaka
10.1088/0022-3727/46/15/155108
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000316791300013&DestApp=WOS
36.In-Plane Oblique Pulsed-Laser Deposition and Its Application to the Fabrication of Metal Oxide Nanoconstrictions.[Appl. Phys. Express,6(3),(2013),035201-]T. Kushizaki, K. Fujiwara, Y. Fujiwara, A. N. Hattori, and H. Tanaka
10.7567/APEX.6.035201
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000315938100023&DestApp=WOS
37.Nanowall-Shaped MgO Substrate with Flat (100) Sidesurface: A New Route to Three-Dimensional Functional Oxide Nanostructured Electronics.[Jpn. J. Appl. Phys.,52(1 1),(2013),015001-]Y. Fujiwara, A. N. Hattori, K. Fujiwara, and H. Tanaka
10.7567/JJAP.52.015001
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000312731500030&DestApp=WOS
[2012]
38.Controlled fabrication of artificial ferromagnetic (Fe,Mn)3O4 nanowall-wires by a three-dimensional nanotemplate pulsed laser deposition method.[Nanotechnology,23(48),(2012),485308-]T. Kushizaki, K. Fujiwara, A. N. Hattori, T. Kanki, and H. Tanaka
10.1088/0957-4484/23/48/485308
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000311138100018&DestApp=WOS
39.Tuning metal-insulator transition by one dimensional alignment of giant electronic domains in artificially size-controlled epitaxial VO2 wires.[Appl. Phys. Lett.,101(26),(2012),263111-]H. Takami, K. Kawatani, H. Ueda, K. Fujiwara, T. Kanki, and H. Tanaka
10.1063/1.4773371
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000312830700055&DestApp=WOS
40.Three dimensional nano-seeding assembly of ferromagnetic Fe/LaSrFeO4 nano-hetero dot array.[J. Appl. Phys.,112(2),(2012),024320-]K. Okada, T. Sakamoto, K. Fujiwara, A. N. Hattori, T. Kanki, and H. Tanaka
10.1063/1.4739719
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000308424500103&DestApp=WOS
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