Researchers Information
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Research Activities

Books, Original Papers & Review Papers
Name
SAKURABA Masao
Affiliation
Research Institute of Electrical Communication
Information Devices Division
Nano-Integration Devices and Processing
Assigned Class
Graduate School of Engineering
Department of Electronic Engineering

Title
Associate Professor
Research Fields
  • Applied physical properties/crystal engineering
  • Thin film and surface interface physical properties
  • Electron/electric material engineering
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Research Subjects
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    Keywords
    Strained heterostructure,quantum effect device,group IV semiconductor,epitaxial growth,plasma chemical vapor deposition,large-scale integration process
    Academic Society Membership
    • 応用物理学会
    • The Electrochemical Society
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    Activity of Academic Society (Post)
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      Books

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      Original Papers

      Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics (Book).[Chemical Vapor Deposition (CVD): Types, Uses and Selected Research, Chapter: 4, Publisher: Nova Science Publishers, Editors: Monica Powell, pp.61-115,(2017),61-115]M. Sakuraba, H. Akima and S. Sato


      Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating.[Science and Technology of Advanced Materials,18(1),(2017),294-306]M. Sakuraba, K. Sugawara, T. Nosaka, H. Akima and S. Sato
      10.1080/14686996.2017.1312520


      Fabrication of High-Ge-Fraction Strained Si1-xGex/Si Hole Resonant Tunneling Diode Using Low-Temperature Si2H6 Reaction for Nanometer-Order Ultrathin Si Barriers.[Solid-State Electronics,60,(2011),112-115]K. Takahashi, M. Sakuraba and J. Murota
      10.1016/j.sse.2011.01.040


      Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation.[Key Engineering Materials,470,(2011),98-103]M. Sakuraba, K. Sugawara and J. Murota
      10.4028/www.scientific.net/KEM.470.98


      Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD.[Thin Solid Films,517,(2008),10-13]M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
      10.1016/j.tsf.2008.08.028


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      Review Papers

      CVD Si1-xGexエピタキシャル成長とドーピング制御.[日本結晶成長学会 日本結晶成長学会誌,27, (2000), 171-178]室田淳一, 櫻庭政夫, 松浦孝


      CVD Si1-x-yGexCyエピタキシャル成長とドーピング.[日立国際電気 日立国際電気技報,1, (2001), 2-10]室田淳一,櫻庭政夫,松浦孝,高澤裕真,森谷敦,野田孝暁,国井泰夫


      SiGe技術の最新研究動向.[工業調査会 電子材料,6, (2003), 97-103]財満鎭明,櫻庭政夫,室田淳一


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      Honours, Awards and Prizes
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        Web Site
        http://www5a.biglobe.ne.jp/~tenrou/
        Mail Address
        Mail Address
        SNS,etc.(ex: twitter)
        SNS,etc.(ex: twitter)
        Updated on
        2018.10.19
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