Researchers Information
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Books, Original Papers & Review Papers
Name
SHIOGAI Junichi
Affiliation
Institute for Materials Research
Low Temperature Physics
Title
Assistant Professor
Original Papers

Unified trend of superconducting transition temperature versus Hall coefficient for ultrathin FeSe films prepared on different oxide substrates.[Physical Review B,95,(2017),115101-]Junichi Shiogai, Tomoki Miyakawa, Yukihiro Ito, Tsutomu Nojima, Atsushi Tsukazaki
10.1103/PhysRevB.95.115101


Enhancement of superconducting transition temperature in FeSe electric-double-layer transistor with multivalent ionic liquids.[PHYSICAL REVIEW MATERIALS,2(3),(2018)]Miyakawa Tomoki, Shiogai Junichi, Shimizu Sunao, Matsumoto Michio, Ito Yukihiro, Harada Takayuki, Fujiwara Kohei, Nojima Tsutomu, Itoh Yoshimitsu, Aida Takuzo, Iwasa Yoshihiro, Tsukazaki Atsushi
10.1103/PhysRevMaterials.2.031801
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000428244900002&DestApp=WOS


Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions.[Sci. Adv.,2(1),(2016),e1501117-]Masuda, Hidetoshi Sakai, Hideaki Tokunaga, Masashi Yamasaki, Yuichi Miyake, Atsushi Shiogai, Junichi Nakamura, Shintaro Awaji, Satoshi Tsukazaki, Atsushi Nakao, Hironori Murakami, Youichi Arima, Taka-hisa Tokura, Yoshinori Ishiwata, Shintaro
10.1126/sciadv.1501117
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000376972900020&DestApp=WOS


Fermi-level tuning of the Dirac surface state in (Bi1-xSbx)(2)Se-3 thin films.[JOURNAL OF PHYSICS-CONDENSED MATTER,30(8),(2018)]Satake Yosuke, Shiogai Junichi, Takane Daichi, Yamada Keiko, Fujiwara Kohei, Souma Seigo, Sato Takafumi, Takahashi Takashi, Tsukazaki Atsushi
10.1088/1361-648X/aaa724
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000424017700001&DestApp=WOS


Improvement of electron mobility in La: BaSnO3 thin films by insertion of an atomically flat insulating (Sr,Ba)SnO3 buffer layer.[AIP Adv.,6(6),(2016),065305-]Shiogai, Junichi Nishihara, Kazuki Sato, Kazuhisa Tsukazaki, Atsushi
10.1063/1.4953808
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=TohokuUniv&SrcApp=TohokuUniv&DestLinkType=FullRecord&KeyUT=WOS:000379041400086&DestApp=WOS


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Updated on
2019.04.11
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