Researchers Information
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Books, Original Papers & Review Papers
Name
TAKAKUWA Yuji
Affiliation
Institute of Multidisciplinary Research for Advanced Materials
Division of Measurements
Surface Physics and Processing
Assigned Class
Graduate School of Engineering
Department of Finemechanics

Title
Professor
Date of Birth
1954.07
Research Fields
  • Thin film and surface interface physical properties(Surface Physics)
  • Electron/electric material engineering(Semiconductor Process)
  • Applied physical properties/crystal engineering(Crystallography)
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Research Subjects
  • Surface reaction kinetics of chemical reactions on Si : crystal growth, etching and oxidation(1982-)
  • Crystal growth of diamond epitanial thin films(2000-)
  • In situ observation of crystal structure on Si surface at high temperature(1987-)
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Keywords
surface dynamics, real-time monitoring, semiconductor process, diamond thin film, silicon oxide film, control of surface reaction, surface physics, synchrotron radiation
Academic Society Membership
  • 応用物理学会
  • 日本表面科学会
  • 日本真空協会
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Books

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Original Papers

Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6.[Applied Physics Letters,64(15),(1994),2013-2015]Y. Takakuwa, Y. Enta, T. Yamaguchi, T. Hori, M. Niwano, N. Miyamoto, H. Ishida, H. Sakamoto, T. Nishimori, H. Kato


Real-time Monitoring of the Growth and Decomposition of SiO2 Layers on Si(001) by Combined Method of RHEED and AES.[Journal of Electron Spectroscopy and Related Phenomena,114-116,(2001),401-407]Y. Takakuwa, F. Ishida


Real-time monitoring of oxidation on the Ti(0001) surface by synchrotron radiation photoelectron spectroscopy and RHEED-AES.[Applied Surface Science,216,(2003),395-401]Y. Takakuwa, S. Ishida, A. Yoshigoe, Y. Teraoka, Y. Yamauchi, Y. Mizuno, H. Tonda, T. Homma


Thermal oxidation mechanism based on formation and diffusion of volatile SiO molecules.[Journal of Non-Crystalline Solids,179,(1994),345-353]Y. Takakuwa, M. Nihei, T. Horie, N. Miyamoto


Growth defect observation with pyramidal hillock and reduction by photoexcited hydrogen in Si CVD with SiH2Cl2.[Journal of the Electrochemical Society,141(9),(1994),2567-2572]Y. Takakuwa, M. K. Mazumder, N. Miyamoto


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Review Papers

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Mail Address
Mail Address
Updated on
2018.09.27
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