Researchers Information
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Books, Original Papers & Review Papers
Name
HANADA Takashi
Affiliation
Institute for Materials Research
Physics of Electronic Materials
Assigned Class
Graduate School of Engineering
Department of Applied Physics

Title
Assistant Professor
Research Fields
  • Thin film and surface interface physical properties(Surface and Interface physics)
  • Applied physical properties/crystal engineering(Crystal Growth)
  • Physical properties I(Semiconductor Physics)
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Research Subjects
  • Molecular Beam Epitaxy of Compound Semiconductors(1996-)
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Academic Society Membership
  • 日本物理学会
  • 応用物理学会
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Books

ワイドギャップ半導体光・電子デバイス.[森北出版,(2006)](5.2.9節)花田貴,八百隆文
ISBN4-627-77321-8


第5版 実験化学講座24 表面・界面.[丸善,(2007)](3.8節)花田貴
ISBN978-4-621-07323-0


発光と受光の物理と応用.[培風館,(2008)](6.4節)花田貴,八百隆文
ISBN978-4-563-06770-0


Oxide and Nitride Semiconductors Processing, Properties, and Applications.[Springer Berlin Heidelberg,(2009)](Chapter 1)T. Hanada
ISBN978-3-540-88846-8


State-of-the-Art Research and Perspective of Zinc Oxide.[シーエムシー出版,(2011)](第1章)花田貴
ISBN978-4-7813-0320-8


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Original Papers

Slowdown in development of self-assembled InAs/GaAs(001) dots near the critical thickness.[J. Vac. Sci. Technol. B,24(4),(2006),1886-1890]T. Hanada, H. Totsuka, S. K. Hong, K. Godo, K. Miyajima, T. Goto, and T. Yao


Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction.[Phys. Rev. B,64,(2001),165307-1-165307-6]T. Hanada, B. H. Koo, H. Totsuka, and T. Yao


In situ Observation of Strain-Induced Optical Anisotropy of ZnS[x]Se[1-x]/GaAs(110) during Molecular-Beam Epitaxy.[Phys. Rev. B,60[12],(1999),8909-8914]T. Hanada, T. Yasuda, A. Ohtake, K. Hingerl, S. Miwa, K. Arai, and T. Yao


Photoelectron diffraction of the Si(111)-(√3×√3)R30゜-Ga surface : Local atomic structure and vibrational correlation.[Physical Review B,55(24),(1997),16420-16425]T. Hanada, H. Daimon, S. Nagano, S. Ino, S. Suga, and Y. Murata


Rocking-curve analysis of reflection high-energy electron diffraction from the Si(111)-(√3×√3)R30°-Al, -Ga, and -In surfaces.[Physical Review B,51(19),(1995),13320-13325]T. Hanada, H. Daimon, and S. Ino


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Review Papers

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Updated on
2018.05.27
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